TY - GEN A1 - Kukli, Kaupo A1 - Dimri, Mukesh Chandra A1 - Tamm, Aile A1 - Kemell, Marianna A1 - Käämbre, Tanel A1 - Vehkamäki, Marko A1 - Puttaswamy, Manjunath A1 - Stern, Raivo A1 - Kuusik, Ivar A1 - Kikas, Arvo A1 - Tallarida, Massimo A1 - Schmeißer, Dieter A1 - Ritala, Mikko A1 - Leskelä, Markku T1 - Structural and Magnetic Studies on Iron Oxide and Iron-Magnesium Oxide Thin Films Deposited Using Ferrocene and (Dimethylaminomethyl)ferrocene Precursors T2 - ECS Journal of Solid State Science and Technology N2 - Iron oxide and magnesium-doped iron oxide films were grown by atomic layer deposition in the temperature range of 350–500 ◦C from ferrocene, (dimethylaminomethyl)ferrocene, magnesiumβ-diketonate, and ozone. Phase composition of the films depended on the deposition temperature, as magnetite and/or maghemite tended to form instead of hematite upon lowering the temperature. Iron oxide layers were also mixed with magnesium oxide by alternate deposition of MgO and Fe2O3 which also favored the formation of magnetite or maghemite structure prior to hematite. Scanning electron microscopy implied the smoothening of the films after doping with magnesium oxide. Magnetometry was used to study the effects of temperature and doping levels on the magnetic properties of the films. KW - iron oxide KW - iron magnesium oxide KW - GIXRD KW - Raman spectroscopy KW - X-Ray absorption spectroscopy (XAS) KW - scanning electron microscopy (SEM) KW - magnetization Y1 - 2013 U6 - https://doi.org/10.1149/2.004303jss SN - 2162-8769 VL - 2 IS - 3 SP - N45 EP - N54 ER - TY - GEN A1 - Kukli, Kaupo A1 - Kemell, Marianna A1 - Puukilainen, Esa A1 - Aarik, Jaan A1 - Aidla, Aleks A1 - Sajavaara, Timo A1 - Laitinen, Mikko A1 - Tallarida, Massimo A1 - Sundqvist, Jonas A1 - Ritala, Mikko A1 - Leskelä, Markku T1 - Atomic Layer Deposition of Ruthenium Films from (Ethylcyclopentadienyl)(pyrrolyl)ruthenium and Oxygen T2 - Journal of the Electrochemical Society N2 - Ru films were grown by atomic layer deposition in the temperature range of 275-350 degrees C using (ethylcyclopentadienyl)(pyrrolyl)ruthenium and air or oxygen as precursors on HF-etched Si, SiO(2), ZrO(2), and TiN substrates. Conformal growth was examined on three-dimensional silicon substrates with 20: 1 aspect ratio. ZrO(2) promoted the nucleation of Ru most efficiently compared to other substrates, but the films roughened quickly on ZrO(2) with increasing film thickness. The minimum number of cycles required to form continuous and conductive metal layers could be decreased by increasing the length of the oxygen pulse. In order to obtain well-conducting Ru films growth to thicknesses of at least 8-10 nm on any surface was necessary. Resistivities in the ranges of 30-60 and 14-16 mu Omega . cm were achieved for 4-6 and 10-15 nm thick films, respectively. Delamination became an issue in the Ru films grown to thicknesses about 10 nm and higher. KW - Atomic layer deposition (ALD) KW - Ruthenium Y1 - 2011 U6 - https://doi.org/10.1149/1.3533387 SN - 0013-4651 VL - 158 IS - 3 SP - D158 EP - D165 ER - TY - GEN A1 - Tamm, Aile A1 - Kemell, Marianna A1 - Kozlova, Jekaterina A1 - Sajavaara, Timo A1 - Tallarida, Massimo A1 - Kukli, Kaupo A1 - Sammelselg, V. A1 - Ritala, Mikko A1 - Leskelä, Markku T1 - Atomic Layer Deposition and Characterization of Erbium Oxide-Doped Zirconium Oxid Thin Films T2 - Journal of The Electrochemical Society KW - atomic Layer deposition KW - Erbium KW - Zirconium KW - Oxid-Doped Y1 - 2010 VL - 157 IS - 10 SP - G193 EP - G201 ER - TY - GEN A1 - Kukli, Kaupo A1 - Aarik, Jaan A1 - Aidla, Aleks A1 - Uustare, Teet A1 - Jõgi, Indrek A1 - Lu, Jun A1 - Tallarida, Massimo A1 - Kemell, Marianna A1 - Kiisler, Alma- Asta A1 - Ritala, Mikko A1 - Leskelä, Markku T1 - Structure and morphology of Ru films grown by atomic layer deposition from 1-ethyl-1´-methyl-ruthenocene T2 - Journal of Crystal Growth KW - morphology KW - atomic layer deposition Y1 - 2010 U6 - https://doi.org/10.1016/j.jcrysgro.2010.03.033 SN - 0022-0248 VL - 312 IS - 12-13 SP - 2025 EP - 2032 ER -