TY - GEN A1 - Lukosius, Mindaugas A1 - Lukose, Rasuolė A1 - Dubey, P. K. A1 - Raju, A. I. A1 - Capista, Daniele A1 - Lisker, Marco A1 - Mai, A. A1 - Wenger, Christian T1 - Graphene for photonic applications T2 - 2024 47th MIPRO ICT and Electronics Convention (MIPRO) N2 - Integrating graphene into Silicon Complementary Metal-Oxide-Semiconductor (CMOS) technology for photonic applications holds immense promise, but it encounters challenges in establishing large-scale graphene processes. These challenges encompass growth through techniques like Chemical Vapor Deposition (CVD), transfer, encapsulation, and contact formation within a routine 200mm wafer pilot line typically utilized for integrated circuit fabrication. This study is dedicated to exploring various facets of graphene research within a 200 mm pilot line, with a focus on overcoming challenges through the fabrication of proof-of-concept photonic graphene-based devices. The synthesis of graphene targeted epi-Ge(100)/Si(100) substrates, grown within the IHP pilot line, showcasing the potential for high-quality graphene deposition across 200mm wafers. Alternatively, employing different orientations such as (110) has been explored to enhance graphene mobility, achieving a remarkable mobility of 2300 cm 2 /Vs at present. The study systematically investigates graphene quality, thickness, and homogeneity utilizing techniques such as Raman spectroscopy, Atomic Force Microscopy (AFM), and Scanning Electron Microscopy (SEM). Additionally, simulations and fabrication of the graphene ring modulators have been conducted at both the component and device levels, incorporating realistic graphene properties. These results indicate a modulation depth of 1.6 dB/μm and a 3dB bandwidth of 7 GHz, showcasing the potential of graphene-based photonic devices for high-speed communication applications. KW - Graphene Y1 - 2024 SN - 979-8-3503-8250-1 SN - 979-8-3503-8249-5 U6 - https://doi.org/10.1109/MIPRO60963.2024.10569652 SN - 2623-8764 SP - 1614 EP - 1618 PB - IEEE ER - TY - GEN A1 - Lukosius, Mindaugas A1 - Lukose, Rasuolė A1 - Lisker, Marco A1 - Dubey, P. K. A1 - Raju, A. I. A1 - Capista, Daniele A1 - Majnoon, Farnaz A1 - Mai, A. A1 - Wenger, Christian T1 - Developments of Graphene devices in 200 mm CMOS pilot line T2 - Proc. Nanotechnology Materials and Devices Conference (NMDC 2023),Paestum, Italy, 22-25 October 2023 N2 - Due to the unique electronic band structure, graphene has opened great potential to extend the functionality of a large variety of devices. Despite the significant progress in the fabrication of various graphene based microelectronic devices, the integration of graphene devices still lack the stability and compatibility with Si-technology processes. Therefore, the investigation and preparation of graphene devices in conditions resembling as close as possible the Si technology environment is of highest importance. This study aims to explore various aspects of graphene research on a 200mm pilot line, with a focus on simulations and fabrication of graphene modulator. To be more precise, it includes design and fabrication of the layouts, necessary mask sets, creation of the flows, fabrication, and measurements of the Gr modulators on 200 mm wafers. KW - Graphene Y1 - 2023 SN - 979-8-3503-3546-0 U6 - https://doi.org/10.1109/NMDC57951.2023.10343569 SP - 505 EP - 506 PB - Institute of Electrical and Electronics Engineers (IEEE) ER - TY - GEN A1 - Lukosius, Mindaugas A1 - Dabrowski, Jarek Marek A1 - Lisker, Marco A1 - Kitzmann, Julia A1 - Schulze, Sebastian A1 - Lippert, Gunther A1 - Fursenko, Oksana A1 - Yamamoto, Yuji A1 - Schubert, Markus Andreas A1 - Krause, Hans-Michael A1 - Wolff, Andre A1 - Mai, A. A1 - Schröder, Thomas A1 - Lupina, Grzegorz T1 - Metal-free, CVD Graphene synthesis on 200 mm Ge / Si(001) substrates T2 - ACS Applied Materials and Interfaces Y1 - 2016 U6 - https://doi.org/10.1021/acsami.6b11397 SN - 1944-8244 SN - 1944-8252 VL - 8 IS - 49 SP - 33786 EP - 33793 ER -