TY - GEN A1 - Steuer, Oliver A1 - Schwarz, Daniel A1 - Oehme, Michael A1 - Schulze, J. A1 - Maczko, H. A1 - Kudrawiec, Robert A1 - Fischer, Inga Anita A1 - Heller, R. A1 - Hübner, R. A1 - Khan, M. M. A1 - Georgiev, Yordan M. A1 - Zhou, Shengqiang A1 - Helm, M. A1 - Prucnal, Slawomir T1 - Band-gap and strain engineering in GeSn alloys using post-growth pulsed laser melting T2 - Journal of Physics: Condensed Matter Y1 - 2022 U6 - https://doi.org/10.1088/1361-648X/aca3ea SN - 1361-648X VL - 35 IS - 5 ER - TY - GEN A1 - Pfetsch, Marc E. A1 - Fügenschuh, Armin A1 - Geißler, Björn A1 - Geißler, Nina A1 - Gollmer, Ralf A1 - Hiller, Benjamin A1 - Humpola, Jesco A1 - Koch, Thorsten A1 - Lehmann, Thomas A1 - Martin, Alexander A1 - Morsi, Antonio A1 - Rövekamp, Jessica A1 - Schewe, Lars A1 - Schmidt, Martin A1 - Schultz, Rüdiger A1 - Schwarz, Robert A1 - Schweiger, Jonas A1 - Stangl, Claudia A1 - Steinbach, Marc C. A1 - Vigerske, Stefan A1 - Willert, Bernhard M. T1 - Validation of Nominations in Gas Network Optimization: Models, Methods, and Solutions T2 - Optimization Methods and Software Y1 - 2015 U6 - https://doi.org/10.1080/10556788.2014.888426 SN - 1055-6788 SN - 1029-4937 VL - 30 IS - 1 SP - 15 EP - 53 ER - TY - CHAP A1 - Schwarz, Astrid A1 - Gruia, M. A1 - Schwoerbel, Jürgen ED - Juberthie, Christian ED - Decu, Vasile T1 - Hydrocarinae T2 - Encyclopaedia biospeologica, Band 2 Y1 - 1998 SP - 953 EP - 976 PB - Société de Biospéologie CY - Moulis, Bucarest ER - TY - JOUR A1 - Stücke, Peter A1 - Schwarz, M. A1 - Scurtu, Nicoleta A1 - Egbers, Christoph T1 - Über die exzentrische Zylinderspaltströmung bei engen Spaltweiten Y1 - 2006 ER - TY - GEN A1 - Fügenschuh, Armin A1 - Geißler, Björn A1 - Gollmer, Ralf A1 - Hayn, Christine A1 - Henrion, René A1 - Hiller, Benjamin A1 - Humpola, Jesco A1 - Koch, Thorsten A1 - Lehmann, Thomas A1 - Martin, Alexander A1 - Mirkov, Radoslava A1 - Morsi, Antonio A1 - Rövekamp, Jessica A1 - Schewe, Lars A1 - Schmidt, Martin A1 - Schultz, Rüdiger A1 - Schwarz, Robert A1 - Schweiger, Jonas A1 - Stangl, Claudia A1 - Steinbach, Marc C. A1 - Willert, Bernhard M. T1 - Mathematical Optimization for Challenging Network Planning Problems in Un- bundled Liberalized Gas Markets T2 - Energy Systems Y1 - 2014 U6 - https://doi.org/10.1007/s12667-013-0099-8 SN - 1868-3975 SN - 1868-3967 VL - 5 IS - 3 SP - 449 EP - 473 ER - TY - GEN A1 - Fischer, Inga Anita A1 - Clausen, Caterina J. A1 - Schwarz, Daniel A1 - Zaumseil, Peter A1 - Capellini, Giovanni A1 - Virgilio, Michele A1 - da Silva Figueira, Maria Cecilia A1 - Birner, Stefan A1 - Koelling, Sebastian A1 - Koenraad, Paul M. A1 - Huang, Michael R. S. A1 - Koch, Christoph T. A1 - Wendav, Torsten A1 - Busch, Kurt A1 - Schulze, Jörg T1 - Composition analysis and transition energies of ultrathin Sn-rich GeSn quantum wells T2 - Physical Review Materials Y1 - 2020 U6 - https://doi.org/10.1103/PhysRevMaterials.4.024601 SN - 2475-9953 VL - 4 IS - 2 ER - TY - GEN A1 - Weißhaupt, David A1 - Funk, Hannes S. A1 - Kern, Michal A1 - Dettling, Marco M. A1 - Schwarz, Daniel A1 - Oehme, Michael A1 - Sürgers, Christoph A1 - Slageren, Joris van A1 - Fischer, Inga Anita A1 - Schulze, Jörg T1 - Weak localization and weak antilocalization in doped Ge1-ySny layers with up to 8% Sn T2 - Journal of Physics: Condensed Matter Y1 - 2021 U6 - https://doi.org/10.1088/1361-648X/abcb68 SN - 1361-648X VL - 33 IS - 8 ER - TY - GEN A1 - Steuer, O. A1 - Liedke, Maciej O. A1 - Butterling, M. A1 - Schwarz, D. A1 - Schulze, J. A1 - Li, Z. A1 - Wagner, A. A1 - Fischer, Inga Anita A1 - Hübner, R. A1 - Zhou, S. T1 - Evolution of point defects in pulsed-laser-melted Ge1-xSnx probed by positron annihilation lifetime spectroscopy T2 - Journal of Physics: Condensed Matter N2 - Direct-band-gap Germanium-Tin alloys (Ge1-xSnx) with high carrier mobilities are promising materials for nano- and optoelectronics. The concentration of open volume defects in the alloy, such as Sn and Ge vacancies, influences the final device performance. In this article, we present an evaluation of the point defects in molecular-beam-epitaxy grown Ge1-xSnx films treated by post-growth nanosecond-range pulsed laser melting (PLM). Doppler broadening – variable energy positron annihilation spectroscopy and variable energy positron annihilation lifetime spectroscopy are used to investigate the defect nanostructure in the Ge1-xSnx films exposed to increasing laser energy density. The experimental results, supported with ATomic SUPerposition calculations, evidence that after PLM, the average size of the open volume defects increases, which represents a raise in concentration of vacancy agglomerations, but the overall defect density is reduced as a function of the PLM fluence. At the same time, the positron annihilation spectroscopy analysis provides information about dislocations and Ge vacancies decorated by Sn atoms. Moreover, it is shown that the PLM reduces the strain in the layer, while dislocations are responsible for trapping of Sn and formation of small Sn-rich-clusters. KW - GeSn KW - laser annealing KW - positron annihilation KW - PLM KW - point defects Y1 - 2023 UR - https://iopscience.iop.org/article/10.1088/1361-648X/ad0a10/meta U6 - https://doi.org/10.1088/1361-648X/ad0a10 SN - 0953-8984 VL - 36 IS - 8 SP - 1 EP - 11 ER -