TY - GEN A1 - Dudek, Piotr T. A1 - Lupina, Grzegorz A1 - Kozłowski, Grzegorz A1 - Zaumseil, Peter A1 - Bauer, Jakob A1 - Fursenko, Oksana A1 - Dabrowski, Jarek Marek A1 - Schmidt, R. A1 - Lippert, Gunther A1 - Müssig, Hans-Joachim A1 - Schröder, Thomas A1 - Schmeißer, Dieter A1 - Zschech, Ehrenfried T1 - Atomic-scale engineering of future high-k dynamic random access memory dielectrics: The example of partial Hf substitution by Ti in BaHfO3 T2 - Journal of Vacuum Science and Technology / B Y1 - 2011 SN - 2166-2754 VL - 29 IS - 1 ER - TY - GEN A1 - Lupina, Grzegorz A1 - Dabrowski, Jarek Marek A1 - Formanek, Peter A1 - Schmeißer, Dieter A1 - Sorge, Roland A1 - Wenger, Christian A1 - Zaumseil, Peter A1 - Müssig, Hans-Joachim T1 - Solid-state reaction between Pr and SiO2 studied by photoelectron spectroscopy and ab initio calculations T2 - Materials Science in Semiconductor Processing N2 - We report on the structural and electrical properties of Pr-based high-k dielectric films fabricated by solid-state reaction between metallic Pr and SiO2 underlayers. A non-destructive depth profiling using synchrotron radiation excited photoelectron spectroscopy (SR-PES), X-ray photoelectron spectroscopy (XPS) and transmission electron microscopy (TEM) were employed to examine the chemical composition and microstructure. Ab initio calculations were done to gain insight into the physical processes involved. SR-PES results indicate that Pr deposition at room temperature (RT) leads to the formation of a Pr silicide and a Pr oxide, what is in good agreement with the scenario expected from ab initio calculations. As revealed by TEM and electrical measurements, oxidation of the reacted structures, followed by annealing, results in a stacked dielectric composed of a SiO2-based buffer with an enhanced permittivity and a Pr silicate film with a high dielectric constant. The leakage current density of 10-4 A/cm2 was measured for stacks with capacitance equivalent thickness (CET) of 1.5 nm prepared by evaporation of the Pr layer on a 1.8 nm SiO2 film, followed by oxidation in air ambient and annealing in N2 atmosphere. The capacitance-voltage (C-V) curves exhibit a large flatband voltage (VFB) shift indicating the presence of a positive charge in the stack. Switching away from the Al contacts to Au gate electrodes introduces a significant reduction of the VFB by 1.3 eV, what is much more than the change expected from the work function difference between Al and Au (not, vert, similar0.9 eV). This in turn implies that VFB is strongly affected by the gate interface electrode. KW - High-k dielectrics KW - Photoelectron spectroscopy KW - Interface reaction Y1 - 2004 SN - 1369-8001 VL - 7 IS - 4-6 SP - 215 EP - 220 ER - TY - GEN A1 - Müssig, Hans-Joachim A1 - Dabrowski, Jarek Marek A1 - Wenger, Christian A1 - Lupina, Grzegorz A1 - Sorge, Roland A1 - Formanek, Peter A1 - Zaumseil, Peter A1 - Schmeißer, Dieter T1 - Ultrathin Dielectric Films Grown by Solid Phase Reaction of Pr with SiO2 T2 - MRS Proceedings Y1 - 2004 SN - 1946-4274 VL - 811 ER - TY - CHAP A1 - Lippert, Gunther A1 - Dabrowski, Jarek Marek A1 - Costina, Ioan A1 - Lupina, Grzegorz A1 - Ratzke, Markus A1 - Zaumseil, Peter A1 - Müssig, Hans-Joachim T1 - Morphology and Composition of Praseodymium Based High-k Materials and Their Relevance to Dielectric Properties of Thin-Films Y1 - 2007 ER - TY - GEN A1 - Zöllner, Marvin Hartwig A1 - Dabrowski, Jarek Marek A1 - Zaumseil, Peter A1 - Giussani, A. A1 - Schubert, Markus Andreas A1 - Lupina, Grzegorz A1 - Wilkens, Henrik A1 - Wollschläger, Joachim A1 - Bäumer, Marcus A1 - Reichling, M. A1 - Schröder, Thomas T1 - On the unusual stacking behavior of twin-free, type B oriented CeO2(111) films on hexagonal Pr2O3(0001) / Si(111) systems T2 - Physical Review Y1 - 2012 UR - http://link.aps.org/doi/10.1103/PhysRevB.85.035302 U6 - https://doi.org/10.1103/PhysRevB.85.035302 SN - 1098-0121 VL - 85 IS - 3 SP - 035302 EP - 035311 ER - TY - CHAP A1 - Seifarth, Olaf A1 - Walczyk, Christian A1 - Lupina, Grzegorz A1 - Dabrowski, Jaroslaw A1 - Weidner, Günter A1 - Zaumseil, Peter A1 - Schmeißer, Dieter A1 - Storck, Peter A1 - Müssig, Hans-Joachim A1 - Schroeder, Thomas T1 - On the electronic and dielectric characterisation of thin cubic PrO2 layers on Silicon T2 - Verhandlungen der Deutschen Physikalischen Gesellschaft, Reihe 6, Bd. 43 N2 - For the integration of 100 % Ge onto the Si platform, a buffer oxide approach has been developed recently, using rare earth oxides to tune the lattice constant between the Si and the Ge. Among these buffer oxides, PrO2 is a prospective candidate with high quality crystalline growth on Si, moderated by an interfacial Pr-silicate between. In order to specify electronic properties of thin PrO2 and its interface on Si(111), especially the width of the band gap, we performed synchrotron radiation based XPS, UPS and XAS measurements at the U49/2 PGM 2 beamline at BESSY II and correlate the results with our structural characterisation performed by TEM and XRD. In order to evaluate the dielectric properties of thin PrO2 layers on Si(111), we performed temperature-, time-, voltage-, and layer thickness-dependent leakage current measurements (J-V). Here, we identified relaxation behaviour in the leakage current, successfully addressed to defect like states inside the Pr-silicate interface layer, corroborated by frequency dependent capacitance versus voltage (C-V) measurements. Y1 - 2008 UR - http://www.dpg-verhandlungen.de/year/2008/conference/berlin/part/df/session/12/contribution/6 SN - 0420-0195 SP - S. 196 PB - Deutsche Physikalische Gesellschaft CY - Bad Honnef ER - TY - CHAP A1 - Seifarth, Olaf A1 - Walczyk, Christian A1 - Lupina, Grzegorz A1 - Zaumseil, Peter A1 - Schmeißer, Dieter A1 - Müssig, Hans-Joachim A1 - Schroeder, Thomas T1 - The electronic band diagram of thin PrO2(111) / Pr-silicate buffers on Si(111) and its relevance to dielectric properties T2 - Verhandlungen der Deutschen Physikalischen Gesellschaft, Reihe 6, Bd. 44 N2 - Thin dielectric buffers of cubic PrO2(111) on Si(111) are ideally suited to integrate Ge onto Si by moderating the lattice mismatch between the materials. The leakage current across this dielectric buffer is strongly influenced by the electronic band diagram and defects inside the band gap. Therefore, we measured the band offsets, band gaps and defect positions by means of synchrotron radiation based photoemission spectroscopy techniques (XPS and XAS) with special emphasis on the Pr-silicate interface. In a next step we compare the spectroscopic data with information from dielectric studies, based on temperature dependent leakage current studies. We observe a close relation between dielectric properties and the electronic structure. Y1 - 2009 UR - http://www.dpg-verhandlungen.de/year/2009/conference/dresden/part/df/session/6/contribution/5 SN - 0420-0195 SP - S. 136 PB - Deutsche Physikalische Gesellschaft CY - Bad Honnef ER - TY - GEN A1 - Lippert, Gunther A1 - Dabrowski, Jarek Marek A1 - Oberbeck, Lars A1 - Schroeder, Uwe A1 - Costina, Ioan A1 - Lupina, Grzegorz A1 - Ratzke, Markus A1 - Zaumseil, Peter A1 - Müssig, Hans-Joachim T1 - Morphology and composition of selected high-k materials and their relevance to dielectric properties of thin films T2 - Journal of the electrochemical society Y1 - 2008 U6 - https://doi.org/10.1149/1.2875741 SN - 1945-7111 VL - 155 IS - 5 SP - G97 EP - G114 ER - TY - GEN A1 - Niu, Gang A1 - Capellini, Giovanni A1 - Lupina, Grzegorz A1 - Niermann, Tore A1 - Salvalaglio, Marco A1 - Marzegalli, Anna A1 - Schubert, Markus Andreas A1 - Zaumseil, Peter A1 - Krause, Hans-Michael A1 - Skibitzki, Oliver A1 - Lehmann, Michael A1 - Montalenti, Francesco A1 - Xie, Ya-Hong A1 - Schröder, Thomas T1 - Photodetection in hybrid single layer graphene/fully coherent Ge island nanostructures selectively grown on Si nano-tip patterns T2 - ACS Applied Materials and Interfaces Y1 - 2016 SN - 1944-8252 VL - 8 IS - 3 SP - 2017 EP - 2026 ER -