TY - CHAP A1 - Mikalo, Ricardo Pablo A1 - Hoffmann, Patrick A1 - Schmeißer, Dieter A1 - Lloyd Spetz, Anita A1 - Lundström, Ingemar A1 - Wawra, Herbert A1 - Pressel, Klaus A1 - Ourmazd, Abbas T1 - Depth profiling using synchrotron radiation with high energetic resolution as demonstrated for Si-, SiC-, SiGe-, and SiGeC-samples T2 - Verhandlungen der Deutschen Physikalischen Gesellschaft N2 - Photoelectron spectroscopy utilizing synchrotron radiation of high energetic resolution (more than E/ΔE=3000) was used to record the Si2p emission signal of Si, SiC, SiGe, and SiGeC samples. The spectra exhibit signals of the elemental silicon as well as of fully oxidised silicon. Upon variing the photon energy, and therefore the escape depth of the photoelectrons, we find an oxidic silicon signal which is only half oxidized. This half oxidized silicon is located to be at the interface of the bulk material with the oxide. We determine the thickness of the surface oxide from the total ratio of oxidic and elemental silicon. We find differences between the interface and bulk oxides regarding their elemental composition. The line width of the elemental Si2p-signal exhibits a broadening of approximately 200meV while variing the photoelectron escape depth. This behaviour is interpreted as caused by surface stress. KW - X-Ray photoelectron spectroscopy (XPS) KW - synchrotron KW - depth profiling Y1 - 2001 UR - http://www.dpg-verhandlungen.de/year/2001/conference/hamburg/part/o/session/13/contribution/74?lang=de PB - Deutsche Physikalische Gesellschaft CY - Bad Honnef ER - TY - GEN A1 - Böhme, O. A1 - Lloyd Spetz, Anita A1 - Lundström, Ingemar A1 - Schmeißer, Dieter T1 - Nanoparticles as the Active Element of High-Temperature Metal-Insulator-Silicon Carbide Gas Sensors T2 - Advanced Materials Y1 - 2001 SN - 1521-4095 SN - 0935-9648 VL - 13 IS - 8 SP - 597 EP - 601 ER - TY - JOUR A1 - Mikalo, Ricardo Pablo A1 - Hoffmann, Patrick A1 - Batchelor, David R. A1 - Schmeißer, Dieter A1 - Lloyd Spetz, Anita A1 - Lundström, Ingemar T1 - Comparison of HF and ozone treated SiC surfaces Y1 - 2001 ER - TY - JOUR A1 - Lloyd Spetz, Anita A1 - Schmeißer, Dieter A1 - Baranzahi, A. A1 - Wälivaare, B. A1 - Göpel, W. A1 - Lundström, Ingemar T1 - X-ray photoemission and Auger electron spectroscopy analysis of fast responding activated metal oxide silicon carbide gas sensors Y1 - 1997 ER - TY - JOUR A1 - Schmeißer, Dieter A1 - Böhme, O. A1 - Yfantis, Alexandros D. A1 - Heller, Thomas A1 - Batchelor, David R. A1 - Lundström, Ingemar A1 - Lloyd Spetz, Anita T1 - Dipole moment of nanoparticles at interfaces Y1 - 1999 ER -