TY - GEN A1 - Pfister, Daniela A1 - Schäfer, Konrad A1 - Ott, Claudia A1 - Gerke, Birgit A1 - Pöttgen, Rainer A1 - Janka, Oliver A1 - Baumgartner, Maximilian A1 - Efimova, Anastasia A1 - Hohmann, Andrea A1 - Schmidt, Peer A1 - Venkatachalam, Sabarinathan A1 - Wüllen, Leo van A1 - Schürmann, Ulrich A1 - Kienle, Lorenz A1 - Duppel, Viola A1 - Parzinger, Eric A1 - Miller, Bastian A1 - Becker, Jonathan A1 - Holleitner, Alexander A1 - Weihrich, Richard A1 - Nilges, Tom T1 - Inorganic double helices in semiconducting SnIP T2 - Advanced Materials N2 - SnIP is the first atomic-scale double helical semiconductor featuring a 1.86 eV bandgap, high structural and mechanical flexibility, and reasonable thermal stability up to 600 K. It is accessible on a gram scale and consists of a racemic mixture of right- and left-handed double helices composed by [SnI] and [P] helices. SnIP nanorods <20 nm in diameter can be accessed mechanically and chemically within minutes. KW - Helical semiconductor Y1 - 2016 UR - http://onlinelibrary.wiley.com/doi/10.1002/adma.201603135/full U6 - https://doi.org/10.1002/adma.201603135 SN - 1521-4095 VL - 28 IS - 44 SP - 9783 EP - 9791 ER - TY - GEN A1 - Strobel, Julian A1 - Hansen, Mirko A1 - Dirkmann, Sven A1 - Neelisetty, Krishna Kanth A1 - Ziegler, Martin A1 - Haberfehlner, Georg A1 - Popescu, Radian A1 - Kothleitner, Gerald A1 - Chakravadhanula, Venkata Sai Kiran A1 - Kübel, Christian A1 - Kohlstedt, Hermann A1 - Mussenbrock, Thomas A1 - Kienle, Lorenz T1 - In Depth Nano Spectroscopic Analysis on Homogeneously Switching Double Barrier Memristive Devices T2 - Journal of Applied Physics Y1 - 2017 U6 - https://doi.org/10.1063/1.4990145 SN - 1089-7550 SN - 0021-8979 VL - 121 IS - 24 SP - 245307 ER - TY - GEN A1 - Zahari, Finn A1 - Schlichting, Felix A1 - Strobel, Julian A1 - Dirkmann, Sven A1 - Cipo, Julia A1 - Gauter, Sven A1 - Trieschmann, Jan A1 - Marquardt, Richard A1 - Haberfehlner, Georg A1 - Kothleitner, Gerald A1 - Kienle, Lorenz A1 - Mussenbrock, Thomas A1 - Ziegler, Martin A1 - Kersten, Holger A1 - Kohlstedt, Hermann T1 - Correlation between sputter deposition parameters and I-V characteristics in double-barrier memristive devices T2 - Journal of Vacuum Science & Technology Y1 - 2019 U6 - https://doi.org/10.1116/1.5119984 SN - 1520-8559 VL - 37 IS - 6 SP - 061203 ER -