TY - GEN A1 - Xie, Yufang A1 - Li, Zichao A1 - Begeza, Viktor A1 - Funk, Hannes S. A1 - Fischer, Inga Anita A1 - Zeng, Yu-Jia A1 - Helm, Manfred A1 - Zhou, Shengqiang A1 - Prucnal, Slawomir T1 - Influence of fabrication parameters on the magnetic and structural properties of Mn5Ge3 T2 - Semiconductor Science and Technology N2 - Mn5Ge3 is a ferromagnetic material with the high potential for spintronic applications. Usually, it is grown by conventional solid state reaction of manganese with germanium using molecular beam epitaxy. Here, we report the structural and magnetic properties of Mn5Ge3 layers grown on Ge substrates using ultrafast-solid phase epitaxy (SPE) method. We investigate the influence of the substrate orientation, Mn layer thickness and annealing parameters on the crystallographic orientation and magnetization of Mn5Ge3. It is shown that after millisecond range SPE, Mn5Ge3 films always have a preferred (100) orientation whether grown on Ge (001) or (111) substrates, which determines the orientation of the magnetization easy axis lying in the film plane along c axis independent of the layer thickness. The Curie temperature of Mn5Ge3 weakly depends on fabrication parameters. KW - solid phase epitaxy KW - flash lamp annealing KW - ferromagnetic film KW - spintronic KW - fabrication parameter KW - structural property Y1 - 2022 UR - https://iopscience.iop.org/article/10.1088/1361-6641/ac6689 U6 - https://doi.org/10.1088/1361-6641/ac6689 SN - 1361-6641 VL - 37 IS - 6 SP - 1 EP - 8 ER -