TY - GEN A1 - Kolanek, Krzysztof A1 - Tallarida, Massimo A1 - Karavaev, Konstantin A1 - Schmeißer, Dieter T1 - In situ studies of the atomic layer deposition of thin HfO2 dielectrics by ultra high vacuum atomic force microscope KW - in situ KW - atomic layer deposition KW - dielectric KW - microscope Y1 - 2010 ER - TY - GEN A1 - Kolanek, Krzysztof A1 - Tallarida, Massimo A1 - Schmeißer, Dieter T1 - Atomic layer deposition of HfO2 investigated in situ by means of a noncontact atomic force microscopy Y1 - 2010 ER - TY - GEN A1 - Kolanek, Krzysztof A1 - Tallarida, Massimo A1 - Schmeißer, Dieter T1 - Height distribution of atomic force microscopy images as a tool for atomic layer deposition characterization T2 - Journal of Vacuum Science and Technology : A N2 - The authors propose the analysis of surface height histograms as a tool for the atomic layer deposition (ALD) growth characterization in the initial stage of the process. ALD of HfO2 on a Si(100)/SiO2 substrate was investigated in situ by ultra high vacuum atomic force microscope working in noncontact mode. The ALD cycles, made by using tetrakis-di-methyl-amido-Hf and H2O as precursors, were performed at 230 C. After each ALD cycle, the relation between the film growth and the root mean square surface roughness was studied. Parameters equivalent to HfO2 layer thickness, coverage, and surface roughness of the substrate and deposited material can be calculated in the proposed routine. KW - Atomic layer deposition (ALD) KW - Atomic force microscopy KW - HfO2 KW - height distribution Y1 - 2013 U6 - https://doi.org/10.1116/1.4754557 VL - 31 IS - 1 SP - 01A104-1 EP - 01A104-9 ER - TY - GEN A1 - Kolanek, Krzysztof A1 - Tallarida, Massimo A1 - Michling, Marcel A1 - Schmeißer, Dieter T1 - In situ study of the atomic layer deposition of HfO2 on Si T2 - Journal of Vacuum Science and Technology Y1 - 2012 SN - 0734-2101 IS - A 30 SP - 01A143-1 EP - 01A143-15 ER - TY - GEN A1 - Klocek, Jolanta A1 - Kolanek, Krzysztof A1 - Schmeißer, Dieter T1 - Spectroscopic and atomic force microscopy investigations of hybrid materials composed of fullerenes and 3-aminopropyltrimethoxysilane T2 - Journal of Physics and Chemistry of Solids Y1 - 2012 SN - 0022-3697 VL - 73 IS - 5 SP - 699 EP - 706 ER - TY - GEN A1 - Kolanek, Krzysztof A1 - Tallarida, Massimo A1 - Michling, Marcel A1 - Karavaev, Konstantin A1 - Schmeißer, Dieter T1 - Atomic layer deposition reactor for fabrication of metal oxides Y1 - 2011 ER - TY - GEN A1 - Tallarida, Massimo A1 - Weisheit, Martin A1 - Kolanek, Krzysztof A1 - Michling, Marcel A1 - Engelmann, Hans-Jürgen A1 - Schmeißer, Dieter T1 - Atomic layer deposition of nanolaminate oxide films on Si T2 - Journal of Nanoparticle Research Y1 - 2011 U6 - https://doi.org/10.1007/s11051-011-0319-x VL - 13 IS - 11 SP - 5975 EP - 5983 ER - TY - CHAP A1 - Michling, Marcel A1 - Kolanek, Krzysztof A1 - Schmeißer, Dieter A1 - Tallarida, Massimo T1 - A growth model for the HfO2 ALD process T2 - Verhandlungen der Deutschen Physikalischen Gesellschaft, Reihe 6, Bd. 46 N2 - In this contribution we report on our in-situ2 cycle-by-cycle (up to the 25 cycles) investigation of the HfO2 atomic layer deposition (ALD) process using the method of x-ray photoelectron spectroscopy (XPS) and electron energy loss spectroscopy (EELS). We used Tetrakis-Dimethyl-Amino-Hafnium (TDMA-Hf) and H2O as precursors and p-type Si wafer with native oxide as a substrate. The XPS measurements were carried out at BESSY II in Berlin with primary energies of 150 eV and 640 eV and the EELS measurements were done with a primary energy of 50 eV. We measured the O1s, Si2p core level and the valence band including the Hf 4f core level. From the Hf4f to Si2p ratios taken at each energy we developed a growth model for the first monolayer and for the following layers too. From our data we conclude, that in the first monolayer up to the fourth ALD cycle an island growth occurs. The height of these islands is about 0,5nm. After the first monolayer is completed, a layer- by-layer growth can be expected. In order to proof this observation we have simulated the Hf/Si ratio for different excitation energies and found a very good agreement with our measurement data. The EELS data especially the evaluation of the loss function onset confirm our growth model. Y1 - 2011 UR - http://www.dpg-verhandlungen.de/year/2011/conference/dresden/part/ds/session/12/contribution/1 SN - 0420-0195 SP - S. 294 PB - Deutsche Physikalische Gesellschaft CY - Bad Honnef ER - TY - CHAP A1 - Michling, Marcel A1 - Tallarida, Massimo A1 - Kolanek, Krzysztof A1 - Schmeißer, Dieter T1 - In-situ EELS and UPS measurements on HfO2 ALD layers T2 - Verhandlungen der Deutschen Physikalischen Gesellschaft, Reihe 6, Bd. 45 N2 - In this contribution we report on our in-situ cycle-by-cycle (up to 10 cycles) investigations of the HfO2 ALD process using the methods of EELS and UPS. We used TDMA-Hf as a precursor and p-type Si wafer with natural oxide as the substrate. The EELS measurements were done with a primary energy of 52,5 eV and the UPS measurements with He I (21,218 eV). The change in the onset of the loss function is readily observed. Already after two cycles the value approach to the bulk value of HfO2. Upon ALD growth there is a remarkable decrease in the intensity of states within the gap. They are rather smooth and saturate after 10 cycles. With UPS we follow the variation of the VB onset and changes in the secondary electron onset. We summarize our data in a band diagram not based on bulk values but on cycle dependent quantities. With these cycle-by-cycle experiments we study the initial growth of HfO2 especially in the very first cycles. Y1 - 2010 UR - http://www.dpg-verhandlungen.de/year/2010/conference/regensburg/part/ds/session/24/contribution/5 SN - 0420-0195 PB - Deutsche Physikalische Gesellschaft CY - Bad Honnef ER - TY - CHAP A1 - Kolanek, Krzysztof A1 - Karavaev, Konstantin A1 - Tallarida, Massimo A1 - Schmeißer, Dieter T1 - Atomic layer deposition of HfO2 onto SiO2 substrates investigated in-situ by non-contact UHV/AFM T2 - Verhandlungen der Deutschen Physikalischen Gesellschaft, Reihe 6, Bd. 45 N2 - We investigated in-situ the atomic layer deposition (ALD) of HfO2 onto SiO2 substrates with ultra high vacuum (UHV) non-contact atomic force microscope (NC-AFM). The ALD process was started after detailed analysis of the initial Si(001)/SiO2 substrate. The ALD cycles, made by using tetrakis-di-methyl-amido-Hf (TDMAHf) and water as precursors, were performed on the SiO2 substrate maintained at 230 ∘C. We studied the relation between the film growth and the root mean square surface roughness, surface skewness, kurtosis, fractal dimension and correlation length. In the initial stages of the ALD process with our analysis of the surface height histograms we were capable of determination: HfO2 layer thickness, surface coverage and surface roughness of a substrate and deposited material. Observation of the surface height histograms evolution during deposition allowed us to verify conformal and effective ALD growth on SiO2 substrate. With this detailed analysis of the surface topography we confirmed the completion of the first HfO2 layer after four ALD cycles. Y1 - 2010 SN - 0420-0195 SP - S. 248 PB - Deutsche Physikalische Gesellschaft CY - Bad Honnef ER - TY - CHAP A1 - Kolanek, Krzysztof A1 - Tallarida, Massimo A1 - Karavaev, Konstantin A1 - Schmeißer, Dieter T1 - In situ measurements of the atomic layer deposition of high-k dielectrics by atomic force microscope for advanced microsystems T2 - International Students and Young Scientists Workshop "Photonics and Microsystems", 2009, 25 - 27 June 2009, Harz University, Wernigerode, Germany KW - atomic layer deposition KW - microsystems KW - high-k dielectrics Y1 - 2009 SN - 978-1-4244-4303-1 SP - 47 EP - 51 PB - IEEE CY - Piscataway, NJ ER - TY - CHAP A1 - Tallarida, Massimo A1 - Karavaev, Konstantin A1 - Kolanek, Krzysztof A1 - Schmeißer, Dieter T1 - Nobel "in-situ2" Approach to Modified ALD Processes for Nano-functional Metals Oxide Films KW - in-situ2 KW - ALD KW - nano-functional Y1 - 2009 ER - TY - GEN A1 - Karavaev, Konstantin A1 - Kolanek, Krzysztof A1 - Tallarida, Massimo A1 - Schmeißer, Dieter T1 - In-Situ Studies of ALD Growth of Hafnium Oxide Films Y1 - 2009 ER - TY - CHAP A1 - Kolanek, Krzysztof A1 - Karavaev, Konstantin A1 - Tallarida, Massimo A1 - Schmeißer, Dieter T1 - In-situ investigations of the atomic layer deposition of HfO2 with UHV/AFM T2 - Verhandlungen der Deutschen Physikalischen Gesellschaft, Reihe 6, Bd. 44 N2 - We studied in-situ the atomic layer deposition (ALD) of HfO2 with ultra high vacuum (UHV) atomic force microscope (AFM), using the ALD reactor developed by our group [1, 2]. The reactor was attached to the Omicron Large Sample-UHV/AFM system in the AFM-Lab of the Angewandte Physik-Sensorik chair at the BTU-Cottbus. We investigated different Si(001)/SiO2 substrates and surface preparation techniques performed before the ALD process. After each ALD cycle (using TDMAHf and H2O as precursors), we studied the influence of the HfO2 growth on the root mean square (RMS) roughness; the surface fractal dimension and the height histogram: the surface skewness and kurtosis. We focused on the influence of the substrate temperature on the surface topography during the ALD. The in-situ studies of the ALD process with the UHV/AFM system correlated with the experiments performed with photoelectron spectroscopy can be used for understanding the fundamental properties of the ALD of HfO2 on Si(001). [1] M. Tallarida, K. Karavaev, and D. Schmeisser, J. Appl. Phys. 104, 064116 (2008); [2] M. Tallarida, K. Karavaev, and D. Schmeisser, J. Vac. Sci. Technol. B, accepted for publication. Y1 - 2009 UR - http://www.dpg-verhandlungen.de/year/2009/conference/dresden/part/ds/session/11/contribution/6 SN - 0420-0195 SP - S. 160 PB - Deutsche Physikalische Gesellschaft CY - Bad Honnef ER - TY - CHAP A1 - Tallarida, Massimo A1 - Karavaev, Konstantin A1 - Kolanek, Krzysztof A1 - Schmeißer, Dieter T1 - Basics of the atomic layer deposition of HfO2 onto Si/SiO2 substrates: in-situ investigations with XPS, XAS and UHV-AFM T2 - Verhandlungen der Deutschen Physikalischen Gesellschaft ; Reihe 6, Bd. 44 N2 - We developed a reactor for investigating in-situ the atomic layer deposition (ALD) of HfO2. X-ray photoelectron and X-ray absorption spectra were collected after each ALD cycle using synchrotron radiation at the beamline U49-2/PGM2 - BESSY II, Berlin. The morphology of the substrate and thin film surfaces was investigated after each ALD cycle with an UHV-AFM microscopy attached to the ALD reactor. We studied the ALD on differently prepared substrates, at different substrate temperatures, and using different Hf-precursors (HfCl4, TEMAHf, TDMAHf). We observed the evolution of the Si/SiO2/HfO2 system during the formation of the first three Hf-oxide layers [1]; we detected the incorporation of Cl into the Hf-oxide films and proposed a mechanism responsible for the Cl contamination [2]; we found evidence of the interfacial-SiO2 growth during the initial ALD cycles and of dipole formation at the HfO2/SiO2 interface. In this contribution we illustrate the basics of the technique used, and discuss the physical-chemical properties of ALD on the basis of the experimental results. [1] M. Tallarida, K. Karavaev, and D. Schmeisser, J. Appl. Phys. 104, 064116 (2008); [2] M. Tallarida, K. Karavaev, and D. Schmeisser, J. Vac. Sci. Technol. B, accepted for publication. Y1 - 2009 UR - http://www.dpg-verhandlungen.de/year/2009/conference/dresden/part/ds/session/11/contribution/4 SN - 0420-0195 SP - S. 159 PB - Deutsche Physikalische Gesellschaft CY - Bad Honnef ER - TY - CHAP A1 - Tallarida, Massimo A1 - Karavaev, Konstantin A1 - Kolanek, Krzysztof A1 - Schmeißer, Dieter T1 - In-situ experimental approach to the study of atomic layer deposition with atomic force microscope, X-ray photoelectron and X-ray absorption spectroscopy T2 - Verhandlungen der Deutschen Physikalischen Gesellschaft ; Reihe 6, Bd. 44 N2 - We describe our experimental approach to the investigation of atomic layer deposition (ALD). ALD is a powerful deposition technique for growing conformal thin films of composite materials with atomically accurate thickness on large area [1]. Despite the enormous industrial interest growing around ALD, its fundamental properties were not yet properly studied. We developed an ALD reactor for the in-situ investigations using XPS, XAS and AFM as experimental techniques. We studied the chemical-physical properties of the growing thin films after each deposition cycle. Here, we illustrate the recent results concerning the ALD of HfO2 obtained using different Hf-precursors on various substrates [2]. We show how the in-situ investigations could deliver an important insight into the fundamental characteristics of ALD and how these information could be used to modify and optimize the deposition parameters. [1] M. Leskelä, M. Ritala, Thin Solid Films, 409, 138, 2002; [2] M. Tallarida, K. Karavaev, and D. Schmeisser, J. Appl. Phys. 104, 064116 (2008). Y1 - 2009 UR - http://www.dpg-verhandlungen.de/year/2009/conference/dresden/part/ds/session/26/contribution/15 SN - 0420-0195 SP - S.176 PB - Deutsche Physikalische Gesellschaft CY - Bad Honnef ER - TY - GEN A1 - Klocek, Jolanta A1 - Kolanek, Krzysztof A1 - Henkel, Karsten A1 - Zschech, Ehrenfried A1 - Schmeißer, Dieter T1 - Influence of the fullerene derivatives and cage polyhedral oligomeric silsesquioxanes on 3-aminopropyltrimethoxysilane based hybrid nanocomposites chemical, morphological and electrical properties T2 - Journal of Physics and Chemistry of Solids N2 - In this study we produced 3-aminopropyltrimethoxysilane based hybrid nanocomposites using fullerene derivative [6,6]–phenyl–C61–butyric acid methyl ester (PCBM) as nanodopants. Additionally, we modified obtained material with incompletely condensed cage polyhedral oligomeric silsesqiuox-anes (POSS) in order to improve its properties. Thin films were deposited by means of the spin-coating method. The films were characterized by atomic force microscopy (AFM), X-ray photoelectron spectroscopy (XPS) and capacitance–voltage (CV) measurements. We observed that a properly chosen PCBM concentration may be a crucial factor to obtain high quality APTMS based films by the spin-coating technique. XPS revealed the presence of the C-NH-C species within POSS containing films indicating chemical interaction between the amino group of APTMS and the POSS molecules. AFM results suggest that at high POSS monomer concentration in the range of 1% the creation of fractal-shaped aggregates takes place. The CV characterization of the samples exhibits a decrease of the APTMS based films dielectric constant due to the POSS and PCBM contribution. The combination of the applied methods delivers complementary information concerning the properties of the analyzed films. KW - low-k KW - fullerene KW - aminopropyltrimethoxysilane KW - silsesqiuoxane KW - X-ray photoelectron spectroscopy (XPS) KW - Atomic force microscopy (AFM) KW - Capacitance voltage (CV) Y1 - 2013 U6 - https://doi.org/10.1016/j.jpcs.2012.08.013 SN - 0022-3697 VL - 74 IS - 1 SP - 135 EP - 145 ER - TY - GEN A1 - Klocek, Jolanta A1 - Henkel, Karsten A1 - Kolanek, Krzysztof A1 - Zschech, Ehrenfried A1 - Schmeißer, Dieter T1 - Spectroscopic and capacitance-voltage characterization of thin aminopropylmethoxysilane films doped with copper phthalocyanine, tris(dimethylvinylsilyloxy)-POSS and fullerene cages T2 - Applied surface science Y1 - 2012 SN - 0169-4332 VL - 258 IS - 10 SP - 4213 EP - 4221 ER - TY - CHAP A1 - Broczkowska, K. A1 - Klocek, Jolanta A1 - Friedrich, Daniel A1 - Henkel, Karsten A1 - Kolanek, Krzysztof A1 - Urbanowicz, A. A1 - Schmeißer, Dieter A1 - Miller, M. A1 - Zschech, Ehrenfried T1 - Fullerene based materials for ultra-low-k application T2 - International Students and Young Scientists Workshop "Photonics and Microsystems", Szklarska, Poreba, Poland, 25 - 27 June 2010 Y1 - 2010 SN - 978-1-4244-8324-2 SP - 39 EP - 43 PB - IEEE CY - Piscataway, NJ ER - TY - GEN A1 - Klocek, Jolanta A1 - Henkel, Karsten A1 - Kolanek, Krzysztof A1 - Broczkowska, K. A1 - Schmeißer, Dieter A1 - Miller, M. A1 - Zschech, Ehrenfried T1 - Studies of the chemical and electrical properties of fullerene and 3-aminopropyltrimethoxysilane based low-k materials T2 - Thin Solid Films Y1 - 2012 SN - 0040-6090 VL - 520 IS - 7 SP - 2498 EP - 2504 ER -