TY - GEN A1 - Krause, Sascha A1 - Beleniotis, Petros A1 - Bengtsson, Olof A1 - Rudolph, Matthias A1 - Heinrich, Wolfgang T1 - Characterization of the Impairment and Recovery of GaN-HEMTs in Low-Noise Amplifiers under Input Overdrive T2 - 2021 IEEE MTT-S International Microwave Symposium (IMS), 07-25 June 2021, Atlanta, GA, USA Y1 - 2021 SN - 978-1-6654-0307-8 SN - 978-1-6654-3141-5 U6 - https://doi.org/10.1109/IMS19712.2021.9574839 SN - 2576-7216 SN - 0149-645X SP - 515 EP - 518 ER - TY - GEN A1 - Krause, Sascha A1 - Michler, Fabian A1 - Kölpin, Alexander A1 - Rudolph, Matthias A1 - Heinrich, Wolfgang T1 - A Digital Correction Method for Increased Dynamic Range in Interferometric Six-Port Radars T2 - IEEE Microwave and Wireless Components Letters Y1 - 2021 U6 - https://doi.org/10.1109/LMWC.2021.3084338 SN - 1558-1764 SN - 1531-1309 VL - 31 IS - 8 SP - 997 EP - 1000 ER - TY - GEN A1 - Krause, Sascha A1 - Zervos, Christos A1 - Beleniotis, Petros A1 - Ritter, Dan A1 - Rudolph, Matthias A1 - Heinrich, Wolfgang T1 - On the Influence of Transistor Dimensions on the Dispersive Behavior in A1GaN/GaN HEMT-Based PAs and Robust LNAs T2 - IEEE/MTT-S International Microwave Symposium - IMS 2022, 19-24 June 2022 Denver, CO, USA Y1 - 2022 SN - 978-1-6654-9613-1 SN - 978-1-6654-9614-8 U6 - https://doi.org/10.1109/IMS37962.2022.9865474 SP - 914 EP - 917 PB - IEEE CY - Piscataway ER - TY - GEN A1 - Beleniotis, Petros A1 - Schnieder, Frank A1 - Krause, Sascha A1 - Haque, Sanaul A1 - Rudolph, Matthias T1 - An efficient drain-lag model for microwave GaN HEMTs based on ASM-HEMT T2 - International Journal of Microwave and Wireless Technologie Y1 - 2022 U6 - https://doi.org/10.1017/S1759078721001483 SN - 1759-0795 VL - 14 IS - 2 SP - 134 EP - 142 ER - TY - GEN A1 - Beleniotis, Petros A1 - Krause, Sascha A1 - Zervos, Christos A1 - Rudolph, Matthias T1 - A Physics-Based Model for Slow Gate-Induced Electron Trapping in GaN HEMTs T2 - IEEE Transactions on Electron Devices Y1 - 2024 U6 - https://doi.org/10.1109/TED.2024.3397234 SN - 0018-9383 VL - 71 IS - 7 SP - 4058 EP - 4065 PB - Institute of Electrical and Electronics Engineers (IEEE) ER - TY - GEN A1 - Beleniotis, Petros A1 - Zervos, Christos A1 - Krause, Sascha A1 - Chevtchenko, Serguei A1 - Ritter, Dan A1 - Rudolph, Matthias T1 - Investigation of traps impact on PAE and linearity of AlGaN/GaN HEMTs relying on a combined TCAD–compact model approach T2 - IEEE Transactions on Electron Devices Y1 - 2024 U6 - https://doi.org/10.1109/TED.2024.3388386 SN - 0018-9383 VL - 71 (2024) IS - 6 SP - 3582 EP - 3589 PB - Institute of Electrical and Electronics Engineers (IEEE) ER - TY - GEN A1 - Zervos, Christos A1 - Beleniotis, Petros A1 - Krause, Sascha A1 - Ritter, Dan A1 - Rudolph, Matthias T1 - The role of gate leakage on surface-related current collapse in AlGaN/GaN HEMTs T2 - 18th European Microwave Integrated Circuits Conference (EuMIC), 18-19 September 2023, Berlin Y1 - 2023 SN - 978-2-87487-073-6 SN - 979-8-3503-4833-0 U6 - https://doi.org/10.23919/EuMIC58042.2023.10289036 VL - 2023 SP - 297 EP - 300 ER - TY - GEN A1 - Beleniotis, Petros A1 - Zervos, Christos A1 - Krause, Sascha A1 - Yazdani, Hossein A1 - Rudolph, Matthias T1 - Traps in GaN HEMTs : from characterization to model development and device optimization T2 - 2025 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) N2 - This paper reviews a comprehensive strategy designed to address the impact of traps across the entire field of GaN HEMT operation. It begins with the characterization of trap levels and the measurement of trap time constants. The study then progresses to TCAD simulations to examine the location of the observed trap levels and their effect on device performance. Finally, it introduces the development of a compact trap model grounded in Shockley-Read-Hall statistics. The proposed model is capable of accurately predicting trapping effects across all combinations of voltage, temperature, and time. The paper concludes by highlighting the synergy TCAD-compact-model, underscoring its utility in device optimization schemes. KW - GaN KW - Traps KW - Microwave KW - TCAD KW - ASM-HEMT Y1 - 2025 SN - 979-8-3315-9172-4 U6 - https://doi.org/10.1109/BCICTS63111.2025.11211504 SP - 1 EP - 8 PB - IEEE CY - Piscataway, NJ ER -