TY - GEN A1 - Kraemer, Thorsten A1 - Meliani, Chafik A1 - Lenk, Friedrich A1 - Würfl, Joachim A1 - Tränkle, Günther T1 - Transferred substrate DHBT of ft = 410 GHz and fmax = 480 GHz for traveling wave amplifiers T2 - Indium Phosphide and Related Materials, 2008, IPRM 2008, 20th International Conference, Versailles, France, 25 - 29 May 2008 N2 - We report a MMIC process in transferred substrate technology. The transistors of 0.8 times 5 mum2 emitter size feature ft = 410 GHz and fmax = 480 GHz at BVceo = 5.5 V. Traveling wave amplifiers of 12 dB broadband gain up to fc = 70 GHz were realized. Y1 - 2008 SN - 978-1-4244-2258-6 SN - 978-1-4244-2259-3 U6 - https://doi.org/10.1109/ICIPRM.2008.4702999 SP - 1 EP - 3 ER - TY - GEN A1 - Kraemer, Thorsten A1 - Lenk, Friedrich A1 - Maaßdorf, Andre A1 - Würfl, Joachim A1 - Tränkle, Günther T1 - High Yield Transferred Substrate InP DHBT T2 - Indium Phosphide & Related Materials, 2007, IPRM '07, IEEE 19th International Conference, Matsue, Japan, 14 - 18 May 2007 N2 - A transferred substrate InP DHBT of 0.8 mum emitter width was developed. The transistors featured high yield and homogeneous device characteristics over the three inch wafer, with an average of ft = 300 GHz plusmn 3%SD, fmax = 250 GHz plusmn 5%SD at a breakdown voltage of BVceo = 6 V. Y1 - 2007 SN - 1-4244-0875-X U6 - https://doi.org/10.1109/ICIPRM.2007.381210 SP - 407 EP - 408 PB - IEEE CY - Piscataway, NJ ER -