TY - GEN A1 - Zaumseil, Peter A1 - Yamamoto, Yuji A1 - Bauer, Joachim A1 - Schubert, Markus Andreas A1 - Matejova, Jana A1 - Kozłowski, Grzegorz A1 - Schröder, Thomas A1 - Tillack, Bernd T1 - Preparation and Characterization of Ge Epitaxially Grown on Nano-structured Periodic Si Pillars and Bars on Si(001) Substrate T2 - Thin Solid Films Y1 - 2012 U6 - https://doi.org/10.1016/j.tsf.2011.10.178 SN - 0040-6090 VL - 520 IS - 8 SP - 3240 EP - 3244 ER - TY - GEN A1 - Capellini, Giovanni A1 - De Seta, Monica A1 - Zaumseil, Peter A1 - Kozłowski, Grzegorz A1 - Schroeder, Thomas T1 - High temperature x-ray diffraction measurements on Ge/Si(001) heterostructures: a study on the residual tensile strain T2 - Journal of Applied Physics Y1 - 2012 U6 - https://doi.org/10.1063/1.3702443 SN - 0021-8979 VL - 111 IS - 7 ER - TY - GEN A1 - Kozłowski, Grzegorz A1 - Zaumseil, Peter A1 - Schubert, Markus Andreas A1 - Yamamoto, Yuji A1 - Schülli, Tobias U. A1 - Tillack, Bernd A1 - Schroeder, Thomas T1 - Growth and relaxation processes in Ge nanocrystals on free-standing Si(001) nanopillars T2 - Nanotechnology Y1 - 2012 U6 - https://doi.org/10.1088/0957-4484/23/11/115704 SN - 0957-4484 VL - 23 IS - 11 SP - 115704 EP - 115711 ER - TY - GEN A1 - Zaumseil, Peter A1 - Kozłowski, Grzegorz A1 - Yamamoto, Yuji A1 - Bauer, J. A1 - Schubert, Markus Andreas A1 - Schülli, Tobias U. A1 - Tillack, Bernd A1 - Schroeder, Thomas T1 - Compliant Si nanostructures on SOI for Ge nanoheteroepitaxy – a case study for lattice mismatched semiconductor integration on Si(001) T2 - Journal of Applied Physics Y1 - 2012 SN - 0021-8979 VL - 112 IS - 4 SP - 043506 EP - 043511 ER - TY - GEN A1 - Zaumseil, Peter A1 - Kozłowski, Grzegorz A1 - Schubert, Markus Andreas A1 - Yamamoto, Yuji A1 - Bauer, J. A1 - Schülli, Tobias U. A1 - Tillack, Bernd A1 - Schroeder, Thomas T1 - The role of SiGe buffer in growth and relaxation of Ge on free-standing Si(001) nanopillars T2 - Nanotechnology Y1 - 2012 SN - 1361-6528 VL - 23 IS - 35 SP - 355706 ER - TY - GEN A1 - Kozłowski, Grzegorz A1 - Fursenko, Oksana A1 - Zaumseil, Peter A1 - Schroeder, Thomas A1 - Vorderwestner, M. A1 - Storck, Peter T1 - The epitaxial growth of low defect SiGe buffer layers for integration of new materials on 300 mm silicon wafers T2 - ECS transactions Y1 - 2012 SN - 1938-6737 VL - 50 IS - 9 SP - 613 EP - 621 ER - TY - GEN A1 - Bauer, J. A1 - Yamamoto, Yuji A1 - Zaumseil, Peter A1 - Fursenko, Oksana A1 - Schulz, K. A1 - Kozłowski, Grzegorz A1 - Schubert, Markus Andreas A1 - Schroeder, Thomas A1 - Tillack, Bernd T1 - Nanostructured Silicon for Ge Nanoheteroepitaxy T2 - Microelectronics Engineering Y1 - 2012 SN - 0167-9317 VL - 97 SP - 169 EP - 172 ER - TY - GEN A1 - Capellini, Giovanni A1 - Kozłowski, Grzegorz A1 - Yamamoto, Yuji A1 - Lisker, Marco A1 - Tillack, Bernd A1 - Ghrib, A. A1 - Kersauson, M. de A1 - El Kurdi, M. A1 - Boucaud, P. A1 - Schroeder, Thomas T1 - Tensile strained Ge layers obtained via Si-CMOS compatible approach T2 - Journal of Applied Physics Y1 - 2013 VL - 113 IS - 1 SP - 013513-1 EP - 013513-6 ER - TY - GEN A1 - Zaumseil, Peter A1 - Kozłowski, Grzegorz A1 - Yamamoto, Yuji A1 - Schubert, Markus Andreas A1 - Schroeder, Thomas T1 - X-ray Characterization of Ge Dots Epitaxially Grown on Nano-structured Si Islands on SOI Substrates T2 - Journal of Applied Crystallography Y1 - 2013 SN - 0021-8898 VL - 46 IS - 4 SP - 868 EP - 873 ER -