TY - GEN A1 - Reiche, Manfred A1 - Kittler, Martin A1 - Pippel, Eckhard A1 - Erfurth, Wilfried A1 - Haehnel, Angelika A1 - Übensee, Hartmut T1 - Strain and carrier transport along dislocations T2 - Physica Status Solidi C Y1 - 2015 U6 - https://doi.org/10.1002/pssc.201400298 SN - 1610-1642 VL - 12 IS - 8 SP - 1071 EP - 1076 ER - TY - GEN A1 - Reiche, Manfred A1 - Kittler, Martin A1 - Pippel, Eckhard A1 - Kosina, Hans A1 - Lugstein, Alois A1 - Übensee, Hartmut T1 - Electronic Properties of Dislocations T2 - Solid State Phenomena Y1 - 2015 U6 - https://doi.org/10.4028/www.scientific.net/SSP.242.141 SN - 1012-0394 VL - 242 SP - 141 EP - 146 ER - TY - GEN A1 - Schwartz, Bernhard A1 - Saring, Philipp A1 - Arguirov, Tzanimir V. A1 - Oehme, Michael A1 - Kostecki, Konrad A1 - Kasper, Erich A1 - Schulze, J. A1 - Kittler, Martin T1 - Analysis of EL Emitted by LEDs on Si Substrates Containing GeSn/Ge Multi Quantum Wells as Active Layers T2 - Solid State Phenomena Y1 - 2015 U6 - https://doi.org/10.4028/www.scientific.net/SSP.242.361 SN - 1012-0394 VL - 242 SP - 361 EP - 367 ER - TY - PAT A1 - Kittler, Martin A1 - Arguirov, Tzanimir V. A1 - Reiche, Manfred T1 - Light-emitting semiconductor structure and optoelectronic component therefrom Y1 - 2015 ER - TY - GEN A1 - Yu, Xuegong A1 - Arguirov, Tzanimir V. A1 - Kittler, Martin A1 - Seifert, Winfried A1 - Ratzke, Markus A1 - Reiche, Manfred T1 - Properties of dislocation networks formed by Si wafer direct bonding T2 - Materials Science in Semiconductor Processing Y1 - 2006 U6 - https://doi.org/10.1016/j.mssp.2006.01.070 VL - 9 IS - 1-3 SP - 96 EP - 101 ER - TY - GEN A1 - Klossek, Andre A1 - Mankovics, Daniel A1 - Arguirov, Tzanimir V. A1 - Ratzke, Markus A1 - Kirner, Simon A1 - Friedrich, Felice A1 - Gabriel, Onno A1 - Stannowski, Bernd A1 - Schlatmann, Rutger A1 - Kittler, Martin T1 - Growth process of microcrystalline silicon studied by combined photoluminsescence and Raman investigations T2 - Journal of applied physics Y1 - 2013 U6 - https://doi.org/10.1063/1.4838058 SN - 1520-8850 VL - 114 SP - 223511 ER - TY - GEN A1 - Ratzke, Markus A1 - Mchedlidze, Teimuraz A1 - Arguirov, Tzanimir V. A1 - Acharya, N. A1 - Kittler, Martin A1 - Reif, Jürgen T1 - Scanning probe studies of amorphous silicon subjected to laser annealing T2 - Physica status solidi (C) Y1 - 2011 SN - 1610-1642 VL - 8 IS - 4 SP - 1351 EP - 1355 ER - TY - GEN A1 - Arguirov, Tzanimir V. A1 - Seifert, Winfried A1 - Kittler, Martin A1 - Reif, Jürgen T1 - Temperature behaviour of photoluminescence and electron-beam-induced current recombination behaviour of extended defects in solar grade silicon T2 - Journal of Physics: Condensed Matter Y1 - 2002 SN - 1361-648X SN - 0953-8984 VL - 14 IS - 48 SP - 13169 EP - 13177 ER - TY - GEN A1 - Pandelov, Stanislaw A1 - Seifert, Winfried A1 - Kittler, Martin A1 - Reif, Jürgen T1 - Analysis of local electric properties of grain boundaries in Si by electron-beam-induced-current techniques T2 - Journal of Physics: Condensed Matter Y1 - 2002 SN - 0953-8984 VL - 14 IS - 48 SP - 13161 EP - 13168 ER - TY - GEN A1 - Kouteva-Arguirova, Simona A1 - Seifert, Winfried A1 - Kittler, Martin A1 - Reif, Jürgen T1 - Raman Measurement of Stress Distribution in Multicrystalline Silicon Materials T2 - Materials Science and Engineering B Y1 - 2003 SN - 0921-5107 VL - 102 IS - 1/3 SP - 37 EP - 42 ER - TY - GEN A1 - Mankovics, Daniel A1 - Schmid, Reiner P. A1 - Arguirov, Tzanimir V. A1 - Kittler, Martin T1 - Dislocation-related photoluminescence imaging of mc-Si wafers at room temperature T2 - Crystal Research and Technology KW - dislocations KW - imaging KW - photoluminescence KW - silicon Y1 - 2012 UR - http://onlinelibrary.wiley.com/doi/10.1002/crat.201200146/full U6 - https://doi.org/10.1002/crat.201200146 SN - 1521-4079 VL - 47 IS - 11 SP - 1148 EP - 1152 ER -