TY - GEN A1 - Mtchedlidze, T. A1 - Arguirov, Tzanimir V. A1 - Kittler, Martin A1 - Hoang, T. A1 - Hollemann, J. A1 - LeMinh, P. A1 - Schmitz, J. T1 - Engineering of dislocation loops for light emission from silicon diodes T2 - Solid State Phenomena Y1 - 2008 SN - 1012-0394 VL - 131/133 SP - 303 EP - 308 ER - TY - JOUR A1 - Mtchedlidze, T. A1 - Arguirov, Tzanimir V. A1 - Kouteva-Arguirova, Simona A1 - Jia, G. A1 - Kittler, Martin A1 - Rölver, R. A1 - Berghoff, B. A1 - Först, M. A1 - Batzner, D. L. A1 - Spangenberg, B. T1 - Influence of a substrate, structure and annealing procedures on crystalline and optical properties of Si/SiO2 multiple quantum wells Y1 - 2008 ER - TY - JOUR A1 - Mtchedlidze, T. A1 - Arguirov, Tzanimir V. A1 - Kouteva-Arguirova, Simona A1 - Kittler, Martin A1 - Rölver, R. A1 - Berghoff, B. A1 - Batzner, D. L. A1 - Spangenberg, B. T1 - Light-induced solid-to-solid phase transformation in Si nanolayers of Si.SiO2 multiple quantum wells JF - Physical Review B Y1 - 2008 SN - 1098-0121 VL - 77 IS - 16 SP - 161304 ER - TY - JOUR A1 - Mtchedlidze, T. A1 - Wilhelm, T. A1 - Yu, Xuegong A1 - Arguirov, Tzanimir V. A1 - Jia, G. A1 - Reiche, Manfred A1 - Kittler, Martin T1 - Regular dislocation networks in Si. Part II: Lunimescence JF - Solid State Phenomena Y1 - 2008 SN - 1012-0394 VL - 131/133 SP - 503 EP - 510 ER - TY - JOUR A1 - Arguirov, Tzanimir V. A1 - Akhmetov, V. D. A1 - Kouteva-Arguirova, Simona A1 - Kittler, Martin A1 - Rölver, R. A1 - Berghoff, B. A1 - Först, M. A1 - Batzner, D. L. A1 - Spangenberg, B. A1 - Mtchedlidze, T. T1 - Effect of laser annealing on crystallinity of the Si layers in Si/SiO2 multiple quantum wells Y1 - 2007 ER - TY - GEN A1 - Hoang, T. A1 - Hollemann, J. A1 - LeMinh, P. A1 - Schmitz, J. A1 - Mtchedlidze, T. A1 - Arguirov, Tzanimir V. A1 - Kittler, Martin T1 - Influence of Dislocation Loops on the Near-Infrared Light Emission From Silicon Diodes T2 - IEEE transactions on electron devices Y1 - 2007 SN - 0018-9383 VL - 54 IS - 8 SP - 1860 EP - 1866 ER - TY - JOUR A1 - Mtchedlidze, T. A1 - Kittler, Martin T1 - Involvement of iron-phosphorus complexes in iron gettering for n-type silicon Y1 - 2006 ER - TY - JOUR A1 - Arguirov, Tzanimir V. A1 - Kittler, Martin A1 - Seifert, Winfried A1 - Yu, Xuegong T1 - Enhanced silicon band edge related radiation: Origin and applicability for light emitters Y1 - 2005 ER - TY - GEN A1 - Kittler, Martin A1 - Arguirov, Tzanimir V. A1 - Fischer, Annette A1 - Seifert, Winfried T1 - Silicon-based Light Emission after Ion Implantation Y1 - 2005 ER - TY - JOUR A1 - Arguirov, Tzanimir V. A1 - Seifert, Winfried A1 - Kittler, Martin A1 - Reif, Jürgen T1 - Temperature Behaviour of Extended Defects in Solar Grade Silicon Investigated by Photoluminescence and EBIC Y1 - 2003 ER - TY - JOUR A1 - Arguirov, Tzanimir V. A1 - Kittler, Martin A1 - Seifert, Winfried A1 - Reif, Jürgen A1 - Bolze, D. A1 - Ehwald, K.-E. A1 - Formanek, Peter T1 - Luminescence of Crystal Defects Formed after Annealing of Phosphorus Implanted Silicon JF - Solid State Phenomena Y1 - 2004 SN - 1012-0394 N1 - Proceedings of the GADEST 2003 VL - 95-96 SP - 289 EP - 296 ER - TY - JOUR A1 - Ratzke, Markus A1 - Yu, Xuegong A1 - Vyvenko, Oleg F. A1 - Reif, Jürgen A1 - Kittler, Martin A1 - Reiche, Manfred T1 - Scanning Probe studies of the electrical activity at interfaces formed by silicon wafer direct bonding JF - Physica Status Solidi C Y1 - 2007 SN - 1610-1634 VL - 4 IS - 8 SP - 2893 EP - 3897 ER - TY - CHAP A1 - Kittler, Martin A1 - Arguirov, Tzanimir V. A1 - Seifert, Winfried ED - Robbins, David J. T1 - Silicon-based Light Emission after Ion Implantation T2 - Optoelectronic integration on silicon, 27 - 28 January 2004, San Jose, California, USA Y1 - 2004 SN - 0-8194-5265-3 SP - S. 164 PB - SPIE CY - Bellingham, Wash. ER - TY - CHAP A1 - Hoffmann, Patrick A1 - Mikalo, Ricardo Pablo A1 - Batchelor, David R. A1 - Beuckert, Guido A1 - Schmeißer, Dieter A1 - Kittler, Martin A1 - Ourmazd, A. A1 - Lewerenz, Hans-Joachim T1 - Solare Energieumwandlung in dünnen Schichten Y1 - 2000 ER - TY - JOUR A1 - Hoffmann, Patrick A1 - Mikalo, Ricardo Pablo A1 - Schmeißer, Dieter A1 - Kittler, Martin T1 - A spectro-microscopic approach to study the morphology and elemental distribution of mc-Si surfaces Y1 - 1999 ER - TY - GEN A1 - Schmid, Reiner P. A1 - Mankovics, Daniel A1 - Arguirov, Tzanimir V. A1 - Ratzke, Markus A1 - Mtchedlidze, T. A1 - Kittler, Martin T1 - Rapid dislocation-related D1-photoluminescence imaging of multicrystalline Si wafers at room temperature T2 - Physica Status Solidi : A Y1 - 2011 U6 - https://doi.org/10.1002/pssa.201026269 SN - 1610-1642 VL - 208 IS - 4 SP - 888 EP - 892 ER - TY - GEN A1 - Schmid, Reiner P. A1 - Mankovics, Daniel A1 - Arguirov, Tzanimir V. A1 - Mtchedlidze, T. A1 - Kittler, Martin T1 - Novel imaging techniques for dislocation-related D1-photo-luminescence of multicrystalline Si wafers - two different approaches Y1 - 2011 ER - TY - GEN A1 - Steffens, S. A1 - Becker, C. A1 - Amkreutz, Daniel A1 - Klossek, André A1 - Kittler, Martin A1 - Chen, Y.-Y. A1 - Schnegg, Alexander A1 - Klingsporn, Max A1 - Abou-Ras, Daniel A1 - Lips, Klaus A1 - Rech, Bernd T1 - Impact of Dislocations and Dangling Bond Defects on The Electrical Performance of Crystalline Silicon Thin Films T2 - Applied Physics Letters Y1 - 2014 U6 - https://doi.org/10.1063/1.4890625 SN - 1077-3118 SN - 0003-6951 VL - 105 IS - 2 SP - 022108 ER - TY - CHAP A1 - Reiche, Manfred A1 - Kittler, Martin A1 - Krause, M. A1 - Übensee, Hartmut ED - Cavallini, Anna ED - Estreicher, Stefan K. T1 - Carrier Transport on Dislocations T2 - International Conference on Defects in Semiconductors 2013, proceedings of the 27th International Conference on Defects in Semiconductors, ICDS-2013, Bologna, Italy, 21-26 July 2013 Y1 - 2014 SN - 978-0-7354-1215-6 U6 - https://doi.org/10.1063/1.4865599 PB - AIP Publishing CY - Melville, New York ER - TY - GEN A1 - Reiche, Manfred A1 - Kittler, Martin A1 - Übensee, Hartmut A1 - Pippel, Eckhard A1 - Hopfe, Sigrid T1 - Dislocations as Native Nanostructures - Electronic Properties T2 - Advances in Nano Research Y1 - 2014 U6 - https://doi.org/10.12989/anr.2014.2.1.001 SN - 2287-2388 SN - 2287-237X VL - 2 IS - 1 SP - 1 EP - 14 ER - TY - GEN A1 - Reiche, Manfred A1 - Kittler, Martin A1 - Erfurth, Wilfried A1 - Pippel, Eckhard A1 - Sklarek, Kornelia A1 - Blumtritt, Horst A1 - Haehnel, Angelika A1 - Übensee, Hartmut T1 - On the Electronic Properties of a Single Dislocation T2 - Journal of Applied Physics Y1 - 2014 U6 - https://doi.org/10.1063/1.4876265 SN - 1089-7550 VL - 115 IS - 19 SP - 194303 ER - TY - GEN A1 - Reiche, Manfred A1 - Kittler, Martin A1 - Übensee, Hartmut A1 - Pippel, Eckhard A1 - Erfurth, Wilfried T1 - Single Dislocations as Nanostructure Devices: Physics and Applications T2 - ECS Transactions Y1 - 2014 U6 - https://doi.org/10.1149/06411.0267ecst VL - 64 IS - 11 SP - 267 EP - 281 ER - TY - GEN A1 - Reiche, Manfred A1 - Kittler, Martin A1 - Schmelz, Matthias A1 - Stolz, Ronny A1 - Pippel, Eckhard A1 - Übensee, Hartmut A1 - Kermann, M. A1 - Ortlepp, Thomas T1 - Single-Electron Transitions In One-Dimensional Native Nanostructures T2 - Journal of Physics: Conference Series Y1 - 2014 U6 - https://doi.org/10.1088/1742-6596/568/5/052024 SN - 1742-6588 VL - 568 SP - 052024 ER - TY - GEN A1 - Schwartz, Bernhard A1 - Klossek, Andre A1 - Kittler, Martin A1 - Oehme, Michael A1 - Kasper, Erich A1 - Schulze, Jörg T1 - Electroluminescence of Germanium-LEDs on Silicon T2 - Physica Status Solidi C Y1 - 2014 U6 - https://doi.org/10.1002/pssc.201400056 VL - 11 IS - 11-12 SP - 1686 EP - 1691 ER - TY - CHAP A1 - Arguirov, Tzanimir V. A1 - Kittler, Martin A1 - Oehme, Michael A1 - Abrosimov, Nikolay V. A1 - Vyvenko, Oleg F. A1 - Kasper, Erich A1 - Schulze, Jörg T1 - Luminescence from Germanium and Germanium on Silicon T2 - Gettering and defect engineering in semiconductor technology XV, selected papers from the 15th Gettering and Defect Engineering in Semiconductor Technology Conference, September 22 - 27, 2013, Oxford, UK Y1 - 2014 U6 - https://doi.org/10.4028/www.scientific.net/SSP.205-206.383 SN - 1662-9779 SP - 383 EP - 393 PB - Trans Tech Publ. CY - Durnten-Zurich [u.a.] ER - TY - CHAP A1 - Kittler, Martin A1 - Reiche, Manfred A1 - Krause, Hans-Michael T1 - Charge Carrier Transport Along Grain Boundaries in Silicon T2 - Gettering and defect engineering in semiconductor technology XV, selected papers from the 15th Gettering and Defect Engineering in Semiconductor Technology Conference, September 22 - 27, 2013, Oxford, UK Y1 - 2014 U6 - https://doi.org/10.4028/www.scientific.net/SSP.205-206.293 SP - 293 EP - 298 PB - Trans Tech Publ. CY - Durnten-Zurich [u.a.] ER - TY - CHAP A1 - Krause, Christoph A1 - Arguirov, Tzanimir V. A1 - Mankovics, Daniel A1 - Krause, Hans-Michael A1 - Kittler, Martin T1 - Properties of D3-Like (0,93 eV) Luminescence in Solar Grade Silicon T2 - Gettering and defect engineering in semiconductor technology XV, selected papers from the 15th Gettering and Defect Engineering in Semiconductor Technology Conference, September 22 - 27, 2013, Oxford, UK Y1 - 2014 U6 - https://doi.org/10.4028/www.scientific.net/SSP.205-206.83 SP - 83 EP - 88 PB - Trans Tech Publ. CY - Durnten-Zurich [u.a.] ER - TY - GEN A1 - Reiche, Manfred A1 - Kittler, Martin A1 - Übensee, Hartmut A1 - Krause, Michael A1 - Pippel, Eckhard T1 - Trap-Assisted Tunneling on Extended Defects in Tunnel Field-Effect Transistors T2 - Japanese Journal of Applied Physics Y1 - 2014 U6 - https://doi.org/10.7567/JJAP.53.04EC03 SN - 1347-4065 VL - 53 IS - 4S, 04EC03 SP - 1 EP - 6 ER - TY - GEN A1 - Schwartz, Bernhard A1 - Arguirov, Tzanimir V. A1 - Kittler, Martin A1 - Oehme, Michael A1 - Kostecki, Konrad A1 - Kasper, Erich A1 - Schulze, Jörg T1 - Comparison of EL emitted by LEDs on Si substrates containing Ge and Ge/GeSn MQW as active layers T2 - Silicon Photonics X, 9-12 February 2015, San Francisco, California, United States Y1 - 2015 U6 - https://doi.org/10.1117/12.2080816 PB - International Society for Optics and Photonics ER - TY - GEN A1 - Kittler, Martin A1 - Arguirov, Tzanimir V. A1 - Reiche, Manfred A1 - Krause, Christoph A1 - Mankovics, Daniel T1 - About dislocation and oxygen related luminescence of Si around 0.8 eV T2 - Physica Status Solidi C Y1 - 2015 U6 - https://doi.org/10.1002/pssc.201400231 SN - 1610-1642 VL - 12 IS - 8 SP - 1077 EP - 1080 ER - TY - GEN A1 - Reiche, Manfred A1 - Kittler, Martin A1 - Pippel, Eckhard A1 - Erfurth, Wilfried A1 - Haehnel, Angelika A1 - Übensee, Hartmut T1 - Strain and carrier transport along dislocations T2 - Physica Status Solidi C Y1 - 2015 U6 - https://doi.org/10.1002/pssc.201400298 SN - 1610-1642 VL - 12 IS - 8 SP - 1071 EP - 1076 ER - TY - GEN A1 - Reiche, Manfred A1 - Kittler, Martin A1 - Pippel, Eckhard A1 - Kosina, Hans A1 - Lugstein, Alois A1 - Übensee, Hartmut T1 - Electronic Properties of Dislocations T2 - Solid State Phenomena Y1 - 2015 U6 - https://doi.org/10.4028/www.scientific.net/SSP.242.141 SN - 1012-0394 VL - 242 SP - 141 EP - 146 ER - TY - GEN A1 - Schwartz, Bernhard A1 - Saring, Philipp A1 - Arguirov, Tzanimir V. A1 - Oehme, Michael A1 - Kostecki, Konrad A1 - Kasper, Erich A1 - Schulze, J. A1 - Kittler, Martin T1 - Analysis of EL Emitted by LEDs on Si Substrates Containing GeSn/Ge Multi Quantum Wells as Active Layers T2 - Solid State Phenomena Y1 - 2015 U6 - https://doi.org/10.4028/www.scientific.net/SSP.242.361 SN - 1012-0394 VL - 242 SP - 361 EP - 367 ER - TY - PAT A1 - Kittler, Martin A1 - Arguirov, Tzanimir V. A1 - Reiche, Manfred T1 - Light-emitting semiconductor structure and optoelectronic component therefrom Y1 - 2015 ER - TY - GEN A1 - Yu, Xuegong A1 - Arguirov, Tzanimir V. A1 - Kittler, Martin A1 - Seifert, Winfried A1 - Ratzke, Markus A1 - Reiche, Manfred T1 - Properties of dislocation networks formed by Si wafer direct bonding T2 - Materials Science in Semiconductor Processing Y1 - 2006 U6 - https://doi.org/10.1016/j.mssp.2006.01.070 VL - 9 IS - 1-3 SP - 96 EP - 101 ER - TY - GEN A1 - Klossek, Andre A1 - Mankovics, Daniel A1 - Arguirov, Tzanimir V. A1 - Ratzke, Markus A1 - Kirner, Simon A1 - Friedrich, Felice A1 - Gabriel, Onno A1 - Stannowski, Bernd A1 - Schlatmann, Rutger A1 - Kittler, Martin T1 - Growth process of microcrystalline silicon studied by combined photoluminsescence and Raman investigations T2 - Journal of applied physics Y1 - 2013 U6 - https://doi.org/10.1063/1.4838058 SN - 1520-8850 VL - 114 SP - 223511 ER - TY - GEN A1 - Ratzke, Markus A1 - Mchedlidze, Teimuraz A1 - Arguirov, Tzanimir V. A1 - Acharya, N. A1 - Kittler, Martin A1 - Reif, Jürgen T1 - Scanning probe studies of amorphous silicon subjected to laser annealing T2 - Physica status solidi (C) Y1 - 2011 SN - 1610-1642 VL - 8 IS - 4 SP - 1351 EP - 1355 ER - TY - GEN A1 - Arguirov, Tzanimir V. A1 - Seifert, Winfried A1 - Kittler, Martin A1 - Reif, Jürgen T1 - Temperature behaviour of photoluminescence and electron-beam-induced current recombination behaviour of extended defects in solar grade silicon T2 - Journal of Physics: Condensed Matter Y1 - 2002 SN - 1361-648X SN - 0953-8984 VL - 14 IS - 48 SP - 13169 EP - 13177 ER - TY - GEN A1 - Pandelov, Stanislaw A1 - Seifert, Winfried A1 - Kittler, Martin A1 - Reif, Jürgen T1 - Analysis of local electric properties of grain boundaries in Si by electron-beam-induced-current techniques T2 - Journal of Physics: Condensed Matter Y1 - 2002 SN - 0953-8984 VL - 14 IS - 48 SP - 13161 EP - 13168 ER - TY - GEN A1 - Kouteva-Arguirova, Simona A1 - Seifert, Winfried A1 - Kittler, Martin A1 - Reif, Jürgen T1 - Raman Measurement of Stress Distribution in Multicrystalline Silicon Materials T2 - Materials Science and Engineering B Y1 - 2003 SN - 0921-5107 VL - 102 IS - 1/3 SP - 37 EP - 42 ER - TY - GEN A1 - Mankovics, Daniel A1 - Schmid, Reiner P. A1 - Arguirov, Tzanimir V. A1 - Kittler, Martin T1 - Dislocation-related photoluminescence imaging of mc-Si wafers at room temperature T2 - Crystal Research and Technology KW - dislocations KW - imaging KW - photoluminescence KW - silicon Y1 - 2012 UR - http://onlinelibrary.wiley.com/doi/10.1002/crat.201200146/full U6 - https://doi.org/10.1002/crat.201200146 SN - 1521-4079 VL - 47 IS - 11 SP - 1148 EP - 1152 ER - TY - CHAP A1 - Kittler, Martin A1 - Arguirov, Tzanimir V. A1 - Schmid, Reiner P. A1 - Seifert, Winfried T1 - Photoluminescence and EBIC for Process Control and Failure Analysis in Si-Based Photovoltaics T2 - ISTFA 2010, conference proceedings from the 36th International Symposium for Testing and Failure Analysis, November 14-18, 2010 KW - Photoluminescence Y1 - 2010 SN - 978-1-61503-041-5 SN - 0-61503-041-7 SP - 137 EP - 142 PB - ASM International Materials Park CY - Texas, USA ER - TY - CHAP A1 - Hoffmann, Patrick A1 - Mikalo, Ricardo Pablo A1 - Schmeißer, Dieter A1 - Kittler, Martin T1 - Spektro-Mikroskopie auf multikristallinem Silizium T2 - Verhandlungen der Deutschen Physikalischen Gesellschaft N2 - Es werden spektro-mikroskopische Untersuchungen an multikristallinem Silizium (mc-Si) vorgestellt, einem aussichtsreichen Material für die Herstellung preiswerter Solarzellen. Dazu wird ein Photoemissions- Elektronenmikroskop (PEEM) ausgestattet mit einem zusätzlichen Energieanalysator für Elektronen (µESCA) genutzt. Bei Verwendung eines Synchrotrons als Anregungsquelle ist es so möglich, sowohl Absorbtions-Spektren (NEXAFS) als auch Photoelektronen-Spektren (PES) mit Ortsauflösung zu erhalten. Dabei wird gezeigt, dass das natürliche Oxid zur Untersuchung der morphologie-abhängigen Oberflächenpotentiale nicht entfernt werden muss. Des Weiteren wird die Verteilung von Ca- und Na-Ausscheidungen, die auf dem mc-Si gefunden wurden, durch ortsaufgelöstes NEXAFS bzw. PES dargestellt. Für den Photoemissions-Prozess des mc-Si im PEEM wird ein Modell aufgestellt, welches Photoemission mit einer Quecksilberdampflampe (hνmax = 4,9 eV) erklärt. KW - mc-Si KW - Solarzellen KW - Röntgen-Photoelektronenspektroskopie (XPS) KW - Röntgen-Absorptionsspektroskopie (XAS, NEXAFS) KW - Photoemissionselektronenspektroskopie (PEEM) Y1 - 2000 UR - http://www.dpg-verhandlungen.de/year/2000/conference/regensburg/part/hl/session/16/contribution/10?lang=en PB - Deutsche Physikalische Gesellschaft CY - Bad Honnef ER - TY - GEN A1 - Gref, Orman A1 - Teodoreanu, Ana-Maria A1 - Leihkauf, Rainer A1 - Lohrke, Heiko A1 - Kittler, Martin A1 - Amkreutz, Daniel A1 - Boit, Christian A1 - Friedrich, Felice T1 - Grain boundary light beam induced current: A characterization of bonded silicon wafers and polycrystalline silicon thin films for diffusion length extraction T2 - Physica Status Solid A Y1 - 2016 U6 - https://doi.org/10.1002/pssa.201532987 SN - 1862-6319 VL - 213 IS - 7 SP - 1728 EP - 1737 ER - TY - GEN A1 - Reiche, Manfred A1 - Kittler, Martin A1 - Pippel, Eckhard A1 - Übensee, Hartmut A1 - Kosina, Hans A1 - Grill, Alexander A1 - Stanojevic, Zlatan A1 - Baumgartner, Oskar T1 - Impact of Defect-Induced Strain on Device Properties T2 - Advanced Engineering Materials Y1 - 2017 U6 - https://doi.org/10.1002/adem.201600736 SN - 1527-2648 N1 - Art.-Nr. 1600736 VL - 19 IS - 8 ER - TY - GEN A1 - Reiche, Manfred A1 - Kittler, Martin A1 - Übensee, Hartmut A1 - Pippel, Eckhard A1 - Haehnel, Angelika A1 - Birner, Stefan T1 - Electronic properties of dislocations T2 - Appl. Phys. A (2016) Y1 - 2016 U6 - https://doi.org/10.1007/s00339-016-9836-x VL - April 2016 122:389 ER - TY - GEN A1 - Reiche, Manfred A1 - Kittler, Martin T1 - Electronic and Optical Properties of Dislocations in Silicon T2 - Crystals Y1 - 2016 U6 - https://doi.org/10.3390/cryst6070074 SN - 2073-4352 VL - 6 IS - 7 ER - TY - CHAP A1 - Schwartz, Bernhard A1 - Oehme, Michael A1 - Körner, Roman A1 - Bechler, Stefan A1 - Schulze, Jörg A1 - Kittler, Martin T1 - Luminescence of strained Ge on GeSn virtual substrate grown on Si (001) T2 - Silicon Photonics XII, 30 January-1 February 2017, San Francisco, California, United States Y1 - 2017 SN - 978-1-5106-0657-9 U6 - https://doi.org/10.1117/12.2249564 PB - SPIE CY - Bellingham, Washington ER - TY - GEN A1 - Schwartz, Bernhard A1 - Reiche, Manfred A1 - Kittler, Martin T1 - Influence of strain, donor concentration, carrier confinement, and dislocation density on the efficiency of luminiscence of Ge-based structures on Si substrate T2 - Physica Status Solidi : C, Current Topics in Solid State Physics Y1 - 2017 UR - http://onlinelibrary.wiley.com/doi/10.1002/pssc.201700018/full SN - 1610-1642 VL - 14 IS - 7 SP - 1700018-1 EP - 1700018-5 ER - TY - GEN A1 - Schwartz, Bernhard A1 - Reiche, Manfred A1 - Kittler, Martin T1 - Temperature dependence of luminescence from dislocated Ge on Si substrate T2 - Materials Today: Proceedings N2 - For mono-crystalline Ge the indirect luminescence intensity declines upon growing temperature from 80 to 300 K, whereas for dislocated Ge structures the opposite behavior occurs. These findings are comparable to earlier observations on Si. The drop of the luminescence in dislocated material upon lowering temperature was attributed to the increase of the competing non-radiative recombination due to shallow dislocation states. In opposition to the indirect luminescence, the character of the direct Ge luminescence, i.e. incline of intensity upon growing temperature, is not converted by dislocations. The measured behavior of the direct peak position of Ge, in the temperature range between 80 and 300 K, is in accordance with calculated dependence and reflects the direct bandgap energy. The observed red shifts in dislocated Ge structures are shown to be produced by tensile strain, bandgap narrowing and by the Sn-content of GeSn quantum wells, respectively. A direct influence of dislocations could not be observed. Satisfying understanding of the existing temperature behavior of the indirect Ge peak position is on embryonic stage Y1 - 2018 U6 - https://doi.org/10.1016/j.matpr.2018.03.061 SN - 2214-7853 VL - 5 IS - 3,1 SP - 14712 EP - 14721 ER - TY - GEN A1 - Kittler, Martin A1 - Reiche, Manfred A1 - Schwartz, Bernhard A1 - Übensee, Hartmut A1 - Kosina, Hans A1 - Stanojevic, Zlatan A1 - Baumgartner, Oskar A1 - Ortlepp, Thomas T1 - Transport of Charge Carriers along Dislocations in Si and Ge T2 - Physica status solidi. A, Applications and materials science N2 - Experimental observations and quantum mechanical device simulations point to different electronic properties of dislocations in silicon and germanium. The experimental data suggest a supermetallic behavior of the dislocations in Si and thus the high strain in the dislocation core is thought to cause the confinement of the charge carriers, which leads to the formation of a 1D electron gas along a dislocation (quantum wire). The resulting significant increase in the electron concentration corresponds to a marked increase in the drain current of metal–oxide–semiconductor field‐effect transistor (MOSFET). The specific resistance of an individual dislocation in Ge is about nine orders of magnitude higher than for a dislocation in Si. The experimental measurements of the strain in dislocation cores in Ge are still missing. Based on the band structure data, the generation of a strain equivalent to that of the dislocation cores in Si appears to be very challenging because of the transition from an indirect into a direct semiconductor with about tenfold lower strain levels. The lower strain in the dislocation core in germanium may not support the carrier confinement as proposed for the dislocation core of silicon, and consequently 1D electron gases are not expected to form along the dislocations in Ge. Y1 - 2019 U6 - https://doi.org/10.10002/pssa.201900287 SN - 1862-6319 VL - Volume 216 IS - 17 ER - TY - GEN A1 - Trushin, Maxim A1 - Varlamov, A. A1 - Loshachenko, A. A1 - Vyvenko, Oleg F. A1 - Kittler, Martin T1 - Combined DLTS/MCTS investigations of deep electrical levels of regular dislocation networks in silicon T2 - Journal of Physics: Conference Series N2 - Local electronic states of regular dislocation networks produced by n- and p-type silicon wafer bonding with different screw dislocation density were studied with deep-level transient spectroscopy (DLTS) and minority carrier transient spectroscopy (MCTS). A drastic sadden changes of the electric level spectrum with increasing of dislocation density from two shallow bands located near the edges of valence and conduction bands towards two deep bands with energy positions about Ec - (0.22-0.26) eV and Ev + (0.4-0.53) eV were found. The origin of the electric level spectrum changes is ascribed to the changes of dislocation core structure from dissociated to perfect ones that occur when interdislocation distances became comparable with the dislocation equilibrium dissociation width. The obtained results correlate well with the results of recent studies of recombination activity of grain boundaries in mc-Si. Y1 - 2019 U6 - https://doi.org/10.1088/1742-6596/1190/1/012005 SN - 1742-6596 SN - 1742-6588 VL - 1190 IS - 1 ER -