TY - GEN A1 - Dziallas, Giannino A1 - Fatemi, Adel A1 - Korndörfer, Falk A1 - Peczek, Anna A1 - Kissinger, Dietmar A1 - Zimmermann, Lars A1 - Malignaggi, Andrea A1 - Kahmen, Gerhard T1 - A Monolithically Integrated Optical Bandpass Receiver in 0.25μm SiGe BiCMOS Technology for Microwave-Photonic Applications T2 - 2020 IEEE Asian Solid-State Circuits Conference (A-SSCC), November 9-11, 2020 ONLINE Y1 - 2020 SN - 978-1-7281-8436-4 SN - 978-1-7281-8437-1 U6 - https://doi.org/10.1109/A-SSCC48613.2020.9336119 ER - TY - GEN A1 - Sütbas, Batuhan A1 - Kahmen, Gerhard T1 - A 7.2-mW V-Band Frequency Doubler with 14% Total Efficiency in 130-nm SiGe BiCMOS T2 - IEEE Microwave and Wireless Components Letters Y1 - 2022 U6 - https://doi.org/10.1109/LMWC.2022.3141557 SN - 1531-1309 SN - 1558-1764 VL - 32 IS - 6 SP - 579 EP - 582 ER - TY - GEN A1 - Dziallas, Giannino A1 - Fatemi, Adel A1 - Peczek, Anna A1 - Zimmermann, Lars A1 - Malignaggi, Andrea A1 - Kahmen, Gerhard T1 - A 56-Gb/s Optical Receiver with 2.08-µA Noise Monolithically Integrated into a 250-nm SiGe BiCMOS Technology T2 - IEEE Transactions on Microwave Theory and Techniques Y1 - 2022 U6 - https://doi.org/10.1109/TMTT.2021.3104838 SN - 0018-9480 SN - 1557-9670 VL - 70 IS - 1 ER - TY - GEN A1 - Iseini, Festim A1 - Malignaggi, Andrea A1 - Korndörfer, Falk A1 - Inac, Mesut A1 - Kahmen, Gerhard T1 - Lumped Ultra-Broadband Linear Driver in 130 nm SiGe SG13G3 Technology T2 - IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) Y1 - 2022 U6 - https://doi.org/10.1109/BCICTS53451.2022.10051703 ER - TY - GEN A1 - Kahmen, Gerhard T1 - SiGe BiCMOS as Enabling Technology for Next Generation RF & THz Systems T2 - EuMIC 2021 Abstract Cards, 16th European Microwave Integrated Circuits Conference (EuMIC), London, United Kingdom, 2022 Y1 - 2022 U6 - https://doi.org/10.23919/EuMIC50153.2022.9783893 SP - S. 21 PB - IEEE CY - Piscataway, NJ ER - TY - GEN A1 - Sütbas, Batuhan A1 - Ngy, Herman Jalli A1 - Wessel, Jan A1 - Kölpin, Alexander A1 - Kahmen, Gerhard T1 - Low-Power Ka- and V-Band Miller Compensated Amplifiers in 130-nm SiGe BiCMOS Technology T2 - 16th European Microwave Integrated Circuits Conference (EuMIC), 03-04 April 2022, London, United Kingdom Y1 - 2022 SN - 978-2-87487-064-4 SN - 978-1-6654-4722-5 U6 - https://doi.org/10.23919/EuMIC50153.2022.9783785 ER - TY - GEN A1 - Eissa, Mohamed Hussein A1 - Fischer, Gunter A1 - Mausolf, Thomas A1 - Rücker, Holger A1 - Malignaggi, Andrea A1 - Kahmen, Gerhard T1 - 220-320-GHz J-Band 4-Way Power Amplifier in Advanced 130-nm BiCMOS Technology T2 - IEEE Microwave and Wireless Components Letters Y1 - 2022 U6 - https://doi.org/10.1109/LMWC.2022.3181407 SN - 1531-1309 SN - 1558-1764 VL - 32 IS - 11 SP - 1335 EP - 1338 ER - TY - GEN A1 - Sütbas, Batuhan A1 - Ng, Herman Jalli A1 - Wessel, Jan A1 - Kölpin, Alexander A1 - Kahmen, Gerhard T1 - A V-band Low-Power and Compact Down-Conversion Mixer with Low LO Power in 130-nm SiGe BiCMOS Technology T2 - 16th European Microwave Integrated Circuits Conference (EuMIC), 03-04 April 2022, London, United Kingdom Y1 - 2022 U6 - https://doi.org/10.23919/EuMIC50153.2022.9783953 ER - TY - GEN A1 - Uhlmann, Max A1 - Pérez-Bosch Quesada, Emilio A1 - Fritscher, Markus A1 - Pérez, Eduardo A1 - Schubert, Markus Andreas A1 - Reichenbach, Marc A1 - Ostrovskyy, Philip A1 - Wenger, Christian A1 - Kahmen, Gerhard T1 - One-Transistor-Multiple-RRAM Cells for Energy-Efficient In-Memory Computing T2 - 21st IEEE Interregional NEWCAS Conference (NEWCAS) N2 - The use of resistive random-access memory (RRAM) for in-memory computing (IMC) architectures has significantly improved the energy-efficiency of artificial neural networks (ANN) over the past years. Current RRAM-technologies are physically limited to a defined unambiguously distinguishable number of stable states and a maximum resistive value and are compatible with present complementary metal-oxide semiconductor (CMOS)-technologies. In this work, we improved the accuracy of current ANN models by using increased weight resolutions of memristive devices, combining two or more in-series RRAM cells, integrated in the back end of line (BEOL) of the CMOS process. Based on system level simulations, 1T2R devices were fabricated in IHP's 130nm SiGe:BiCMOS technology node, demonstrating an increased number of states. We achieved an increase in weight resolution from 3 bit in ITIR cells to 6.5 bit in our 1T2R cell. The experimental data of 1T2R devices gives indications for the performance and energy-efficiency improvement in ITNR arrays for ANN applications. KW - RRAM KW - In-Memory Computing Y1 - 2023 SN - 979-8-3503-0024-6 SN - 979-8-3503-0025-3 U6 - https://doi.org/10.1109/NEWCAS57931.2023.10198073 SN - 2474-9672 SN - 2472-467X PB - Institute of Electrical and Electronics Engineers (IEEE) ER -