TY - CHAP A1 - Loebjinski, Maria A1 - Köhler, Jochen A1 - Rug, Wolfgang A1 - Pasternak, Hartmut ED - Caspeele, Robby ED - Taerwe, Luc ED - Frangopol, Dan M. T1 - Development of an optimization-based and practice orientated assessment scheme for the evaluation of existing timber structures T2 - Life-Cycle Analysis and Assessment in Civil Engineering: Towards an Integrated Vision Y1 - 2019 SN - 978-1-138-62633-1 SN - 978-1-315-22891-4 SP - 353 EP - 360 PB - Taylor & Francis Group CY - London ER - TY - CHAP A1 - Hilsenbeck, Jochen A1 - Lenk, Friedrich A1 - Lossy, Richard A1 - Würfl, Joachim A1 - Kohler, K. A1 - Obloh, H. T1 - DC and microwave properties of 0.5 um AlGaN/GaN high electron mobility transistors fabricated on 2-inch process line T2 - IEEE International Symposium on Compound Semiconductors, held in Monterey, California, 2 - 5 October 2000 N2 - DC and RF characteristics of AlGaN/GaN HEMTs processed by 2-inch stepper lithography are presented. The devices, grown by MOVPE on 2" sapphire wafers consist of: GaN buffer, Al0.25Ga0.75 N spacer, doped Al0.25Ga0.75N supply layer, Al0.25Ga0.75N barrier, GaN cap. Refractory source and gate contacts along with mesa isolation and air bridge technology are applied. Typical values for maximum saturation current, transconductance and pinch-off voltage are: 616 m/A/mm, 203 mS/mm, -3.5 V with very good homogeneity across 2". The cut off frequencies fT and fmax are 24 and 54 GHz respectively. A standard small signal equivalent circuit model exactly describes DC- and microwave properties Y1 - 2000 SN - 0-7803-6258-6 U6 - https://doi.org/10.1109/ISCS.2000.947181 SP - 351 EP - 356 PB - IEEE Service Center CY - Piscataway, NJ ER -