TY - CHAP A1 - Łobaza, Justyna A1 - Kot, Małgorzata A1 - Schmeißer, Dieter T1 - Analysis of surface oxidation of TiON ALD films T2 - Verhandlungen der Deutschen Physikalischen Gesellschaft N2 - Titanium oxynitride (TiON) films are interesting due to their remarkable optical and electronic properties which strongly depend on the O/N ratio. However, it is known that films containing Ti are prone to oxidation in contact with the air [1]. In this work, we study the thickness of a surface oxidation layer which is inherently formed on the atomic layer deposition (ALD) grown TiON/TiN films on Si substrate. We use an Ar+ ion bombardment source and X-ray photoelectron spectroscopy (XPS) for this analysis. We calibrate the sputter rate by using substrate signal intensity decay (here Si 2p) in the XPS spectra of the 5 nm thick TiON sample accordingly. This rate is assumed to be constant when films with a larger thickness are analyzed. We find that the surface oxidation layer is about 1 nm thick, independent on the detailed ALD parameters of the films. The TiN films found underneath are close to the stoichiometric values and have a residual O content below 5%. Finally, we compare these data to our previous results collected with synchrotron-based radiation source [2,3]. References: [1] Sowinska et al., Applied Physics Letters 100, 233509 (2012). [2] M. Sowinska et al., Applied Surface Science 381, 42-47 (2016). [3] M. Sowińska et al., Journal of Vacuum Science and Tech- nology A, 01A12734 (2016). KW - titanium oxynitride KW - X-Rax photoelectron spectroscopy KW - depth profiling KW - sputtering Y1 - 2017 UR - http://www.dpg-verhandlungen.de/year/2017/conference/dresden/part/ds/session/21/contribution/7 SN - 0420-0195 SP - S. 202 PB - Deutsche Physikalische Gesellschaft CY - Bad Honnef ER -