TY - GEN A1 - Segabinazzi Ferreira, Raphael A1 - George, Nevin A1 - Chen, Junchao A1 - Hübner, Michael A1 - Krstic, Milos A1 - Nolte, Jörg A1 - Vierhaus, Heinrich Theodor T1 - Configurable Fault Tolerant Circuits and System Level Integration for Self-Awareness T2 - Proceedings of the Work in Progress Session held in connection with SEAA 2019, the 45th EUROMICRO Conference on Software Engineering and Advanced Applications and DSD 2019, the 22nd EUROMICRO Conference on Digital System Design N2 - Scaling minimum features of ICs down to the 10nm- area and below has allowed high integration rates in electronics. Scaling at supply voltages of 1V and below also implies a rising level of stress which drives aging effects that reduce switching speed and the expected life time. Additionally, vulnerability from particle radiation is increased. Hence, fault detection and on- line correction become a must for many applications. However, not only fault tolerance but self-awareness becomes also an advantage. Provided that by being aware of its own healthy state allow optimized configurations regarding system operation modes and configurable hardware mechanism. This paper shows a preliminary work in a configurable circuit and explores its configuration possibilities when integrated into a complete system. Y1 - 2019 SN - 978-3-902457-54-7 U6 - https://doi.org/10.26127/BTUOpen-5050 PB - SEA-Publications CY - Kallithea, Chalkidiki (Greece) ER - TY - GEN A1 - Andjelkovic, Marko A1 - Veleski, Mitko A1 - Chen, Junchao A1 - Simevski, Aleksandar A1 - Krstic, Milos T1 - A Particle Detector Based on Pulse Stretching Inverter Chain T2 - 26th IEEE International Conference on Electronics, Circuits and Systems (ICECS 2019), Genova Y1 - 2019 SN - 978-1-7281-0996-1 SN - 978-1-7281-0997-8 U6 - https://doi.org/10.1109/ICECS46596.2019.8964644 ER - TY - GEN A1 - Andjelkovic, Marko A1 - Chen, Junchao A1 - Simevski, Aleksandar A1 - Stamenkovic, Zoran A1 - Krstic, Milos A1 - Kraemer, Rolf T1 - A Review of Particle Detectors for Space-Borne Self-Adaptive Fault Tolerant Systems T2 - 18th IEEE East-West Design and Test Symposium (EWDTS 2020), Varna, Bulgaria, 04 - 07 September 2020 Y1 - 2020 SN - 978-1-7281-9899-6 SN - 978-1-7281-9898-9 SN - 978-1-7281-9900-9 U6 - https://doi.org/10.1109/EWDTS50664.2020.9225138 SN - 2472-761X PB - IEEE ER - TY - GEN A1 - Fritscher, Markus A1 - Uhlmann, Max A1 - Ostrovskyy, Philip A1 - Reiser, Daniel A1 - Chen, Junchao A1 - Schubert, Andreas A1 - Schulze, Carsten A1 - Kahmen, Gerhard A1 - Fey, Dietmar A1 - Reichenbach, Marc A1 - Krstic, Milos A1 - Wenger, Christian T1 - Area-efficient digital design using RRAM-CMOS standard cells T2 - 2024 IEEE Computer Society Annual Symposium on VLSI (ISVLSI) N2 - Extending the scalability of digital integrated circuits through novel device concepts is an attractive option. Among these concepts, resistive random access memory (RRAM) devices allow fast and nonvolatile operation. However, building large memristive systems is still challenging since large analog circuits have to be designed and integrated. In this paper, we propose a novel solution - the implementation of digital standard cells by the means of RRAM devices. While this methodology is universal, with applications ranging from few-device-circuits to large macroblocks, we demonstrate it for a 2T2R-cell. The benefits of using RRAM devices are demonstrated by implementing a NAND standard cell merely consuming the area of two transistors. This cell is about 25 % smaller than the equivalent CMOS NAND in the same technology. We use these cells to implement a half adder, beating the area of the equivalent CMOS implementation using more sophisticates gates by 15 %. Lastly, we fully integrate this novel standard cell into a digital standard cell library and perform a synthesis and layout of a RISC-V CPU core. KW - RRAM Y1 - 2024 SN - 979-8-3503-5411-9 SN - 979-8-3503-5412-6 U6 - https://doi.org/10.1109/ISVLSI61997.2024.00026 SN - 2159-3477 VL - 18 SP - 81 EP - 87 PB - IEEE ER - TY - GEN A1 - Fritscher, Markus A1 - Uhlmann, Max A1 - Ostrovskyy, Philip A1 - Reiser, Daniel A1 - Chen, Junchao A1 - Wen, Jianan A1 - Schulze, Carsten A1 - Kahmen, Gerhard A1 - Fey, Dietmar A1 - Reichenbach, Marc A1 - Krstic, Milos A1 - Wenger, Christian ED - Wenger, Christian T1 - RISC-V CPU design using RRAM-CMOS standard cells T2 - IEEE transactions on very large scale integration (VLSI) systems N2 - The breakdown of Dennard scaling has been the driver for many innovations such as multicore CPUs and has fueled the research into novel devices such as resistive random access memory (RRAM). These devices might be a means to extend the scalability of integrated circuits since they allow for fast and nonvolatile operation. Unfortunately, large analog circuits need to be designed and integrated in order to benefit from these cells, hindering the implementation of large systems. This work elaborates on a novel solution, namely, creating digital standard cells utilizing RRAM devices. Albeit this approach can be used both for small gates and large macroblocks, we illustrate it for a 2T2R-cell. Since RRAM devices can be vertically stacked with transistors, this enables us to construct a nand standard cell, which merely consumes the area of two transistors. This leads to a 25% area reduction compared to an equivalent CMOS nand gate. We illustrate achievable area savings with a half-adder circuit and integrate this novel cell into a digital standard cell library. A synthesized RISC-V core using RRAM-based cells results in a 10.7% smaller area than the equivalent design using standard CMOS gates. KW - RRAM KW - Logic gates Y1 - 2025 UR - https://ieeexplore.ieee.org/document/10960690 U6 - https://doi.org/10.1109/TVLSI.2025.3554476 SN - 1063-8210 SP - 1 EP - 9 PB - Institute of Electrical and Electronics Engineers (IEEE) CY - New York ER -