TY - CHAP
A1 - Rudolph, Matthias
A1 - Meliani, Chafik
A1 - Hilsenbeck, Jochen
A1 - Heinrich, Wolfgang
T1 - A GaAs-HBT Distributed Amplifier with Near-fT Cut-off Frequency for High-Bitrate Transmissions
Y1 - 2004
ER -
TY - GEN
A1 - Lenk, Friedrich
A1 - Schott, Matthias
A1 - Hilsenbeck, Jochen
A1 - Heinrich, Wolfgang
T1 - A new design approach for low phase-noise reflection-type MMIC oscillators
T2 - IEEE transactions on microwave theory and techniques
N2 - In this paper, optimization of the loaded quality factor QL for reflection-type heterojunction bipolar transistor (HBT) oscillators is investigated. The main result is an optimum relation between the S-parameter phases at the three transistor ports. A new design strategy for this type of oscillator is proposed. The analysis is verified by comparing several Ka-band monolithic-microwave integrated-circuit oscillators in GaAs HBT technology with different resonators. The measured loaded QL values correspond to the measured phase noise of the circuits. At an oscillation frequency of 33 GHz, an excellent phase noise of -87 dBc/Hz at 100-kHz offset frequency is achieved over the whole tuning range.
Y1 - 2004
U6 - https://doi.org/10.1109/TMTT.2004.837319
SN - 0018-9480
VL - 52
IS - 12
SP - 2725
EP - 2731
ER -
TY - CHAP
A1 - Hilsenbeck, Jochen
A1 - Brunner, F.
A1 - Lenk, Friedrich
A1 - Würfl, Joachim
T1 - Fabrication and Electrical Performance of Oscillators in GaAs/GaInP-HBT MMIC Technology up to 40 GHz
T2 - 29th International Symposium on Compound Semiconductors (ISCS), Lausanne/Switzerland, 2002
Y1 - 2002
SN - 0-7503-0942-3
SN - 978-07503-0942-4
SP - 239
EP - 242
PB - Institute of Physics Publ.
CY - Bristol [u.a.]
ER -
TY - CHAP
A1 - Lenk, Friedrich
A1 - Schott, Matthias
A1 - Hilsenbeck, Jochen
A1 - Heinrich, Wolfgang
T1 - Optimizing MMIC reflection-type oscillators
T2 - 2004 IEEE MTT-S International Microwave Symposium digest, June 6 - 11, 2004, Fort Worth Convention Center, Fort Worth, Texas, vol. 3
N2 - In this paper, optimization of the loaded quality factor QL for reflection-type HBT oscillator is investigated. Main result is an optimum relation between the S parameter phases at the three transistor ports. To support this finding, a 35.5 GHz MMIC VCO phase noise better than -85 dBc/Hz at 100 kHz offset frequency is demonstrated.
Y1 - 2004
SN - 0-7803-8331-1
U6 - https://doi.org/10.1109/MWSYM.2004.1338816
SP - 1341
EP - 1344
PB - IEEE Service Center
CY - Piscataway, NJ
ER -
TY - CHAP
A1 - Lenk, Friedrich
A1 - Schott, Matthias
A1 - Hilsenbeck, Jochen
A1 - Würfl, Joachim
A1 - Heinrich, Wolfgang
T1 - Low phase-noise monolithic GaInP/GaAs-HBT VCO for 77 GHz
T2 - 2003 IEEE MTT-S International Microwave Symposium digest, June 8 - 13, 2003, Pennsylvania Convention Center, Philadelphia, Pennsylvania, vol. 2
N2 - Coplanar W-band push-push VCO MMICs using GaInP/GaAs HBTs are presented. One circuit operates at 77 GHz with phase noise of -92 dBc/Hz at 1 MHz offset. To our knowledge this is the first fully monolithic W-band VCO with phase noise better than -90 dBc/Hz. A second version with two varactor diodes yields an almost threefold relative tuning bandwidth.
Y1 - 2003
SN - 0-7803-7695-1
U6 - https://doi.org/10.1109/MWSYM.2003.1212515
SP - 903
EP - 906
PB - IEEE Service Center
CY - Piscataway, NJ
ER -
TY - CHAP
A1 - Kuhnert, Holger
A1 - Lenk, Friedrich
A1 - Hilsenbeck, Jochen
A1 - Würfl, Joachim
A1 - Heinrich, Wolfgang
T1 - Low phase-noise GaInP/GaAs-HBT MMIC oscillators up to 36 GHz
T2 - 2001 IEEE MTT-S International Microwave Symposium digest, May 20 - 25, 2001, Phoenix Civic Plaza, Phoenix, AZ, vol. 3
N2 - Monolithic coplanar 18 and 36 GHz oscillators with GaInP/GaAs-HBTs and on-chip resonators are presented. Measured phase-noise reaches -93 dBc/Hz and -91 dBc/Hz at 100 kHz offset for 18 and 36 GHz, respectively. These values demonstrate that GaAs-HBT oscillators yield a phase-noise performance comparable to SiGe-HBTs, with the potential for higher frequencies.
Y1 - 2001
SN - 0-7803-6538-0
U6 - https://doi.org/10.1109/MWSYM.2001.967198
SP - 1551
EP - 1554
PB - IEEE Service Center
CY - Piscataway, NJ
ER -
TY - CHAP
A1 - Schott, Matthias
A1 - Kuhnert, Holger
A1 - Lenk, Friedrich
A1 - Hilsenbeck, Jochen
A1 - Würfl, Joachim
A1 - Heinrich, Wolfgang
T1 - 38 GHz push-push GaAs-HBT MMIC oscillator
T2 - 2002 IEEE MTT-S International Microwave Symposium digest, June 2 - 7, 2002, Washington State Convention & Trade Center, Seattle, Washington, vol. 2
N2 - Two differential coplanar MMIC HBT oscillators are presented, a fixed frequency and a VCO version. They provide single-ended output at the second harmonic at 38 GHz as well as differential output at 19 GHz. The oscillators show excellent phase noise performance, the fixed-frequency type reaches -95 dBc/Hz at the fundamental frequency and -89 dBc/Hz at the second harmonic, at 100 kHz offset.
Y1 - 2002
SN - 0-7803-7239-5
U6 - https://doi.org/10.1109/MWSYM.2002.1011761
SP - 839
EP - 842
PB - IEEE Service Center
CY - Piscataway, NJ
ER -
TY - CHAP
A1 - Hilsenbeck, Jochen
A1 - Lenk, Friedrich
A1 - Lossy, Richard
A1 - Würfl, Joachim
A1 - Kohler, K.
A1 - Obloh, H.
T1 - DC and microwave properties of 0.5 um AlGaN/GaN high electron mobility transistors fabricated on 2-inch process line
T2 - IEEE International Symposium on Compound Semiconductors, held in Monterey, California, 2 - 5 October 2000
N2 - DC and RF characteristics of AlGaN/GaN HEMTs processed by 2-inch stepper lithography are presented. The devices, grown by MOVPE on 2" sapphire wafers consist of: GaN buffer, Al0.25Ga0.75 N spacer, doped Al0.25Ga0.75N supply layer, Al0.25Ga0.75N barrier, GaN cap. Refractory source and gate contacts along with mesa isolation and air bridge technology are applied. Typical values for maximum saturation current, transconductance and pinch-off voltage are: 616 m/A/mm, 203 mS/mm, -3.5 V with very good homogeneity across 2". The cut off frequencies fT and fmax are 24 and 54 GHz respectively. A standard small signal equivalent circuit model exactly describes DC- and microwave properties
Y1 - 2000
SN - 0-7803-6258-6
U6 - https://doi.org/10.1109/ISCS.2000.947181
SP - 351
EP - 356
PB - IEEE Service Center
CY - Piscataway, NJ
ER -
TY - CHAP
A1 - Hilsenbeck, Jochen
A1 - Lenk, Friedrich
A1 - Heinrich, Wolfgang
A1 - Würfl, Joachim
T1 - Low phase noise MMIC VCOs for Ka-band applications with improved GaInP/GaAs-HBT technology
T2 - Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 2003, 25th Annual Technical Digest 2003, San Diego, California, November 9 - 12, 2003
N2 - We report on the technology and performance of fully monolithic coplanar voltage-controlled oscillators (VCOs) with GaInP/GaAs-HBTs as the active devices. With our optimized HBT process, the parasitic base resistance R/sub B/ and extrinsic base-collector capacitance C/sub EX/ are significantly reduced. In this way, the maximum frequency of oscillation F/sub max/ is increased from 100 to 170 GHz. This allows us to realize fundamental 38 GHz-VCOs with very low phase noise. At an oscillation frequency F/sub res/=34.2/spl plusmn/0.2 GHz, the VCO reaches phase noise levels of -87 dBc/Hz @ 100 kHz and -108 dBc/Hz @ 1 MHz offset frequency, respectively. To our knowledge, these phase noise values are the lowest GaAs data for Ka-band applications reported so far.
Y1 - 2003
SN - 0-7803-7833-4
U6 - https://doi.org/10.1109/GAAS.2003.1252399
SP - 223
EP - 226
PB - IEEE Service Center
CY - Piscataway, NJ
ER -
TY - CHAP
A1 - Lenk, Friedrich
A1 - Schott, Matthias
A1 - Hilsenbeck, Jochen
A1 - Heinrich, Wolfgang
T1 - Low phase-noise GaAs-HBT monolithic W-band oscillator
T2 - 34th European Microwave Conference, Tuesday 12th, Wednesday 13th and Thursday 14th October
Y1 - 2004
SN - 1-58053-992-0
SP - 897
EP - 900
PB - London
CY - Horizon House Publ.
ER -
TY - CHAP
A1 - Rudolph, Matthias
A1 - Meliani, Chafik
A1 - Hilsenbeck, Jochen
A1 - Heinrich, Wolfgang
A1 - Meliani, Chafik
T1 - A 40 Gbps Broadband Amplifier for Modulator-Driver Applications Using a GaAs HBT Technology
Y1 - 2004
ER -