TY - JOUR A1 - Goryachko, Andriy A1 - Yeromenko, Y. A1 - Henkel, Karsten A1 - Wollweber, Jürgen A1 - Schmeißer, Dieter T1 - The Si(001)/C2H2 interaction to form a buffer layer for 3C-SiC growth JF - Physica status solidi / A N2 - The intial stages of Si(001) interaction with C2H2 were investigated with XPS and surface profilometry. The carbon enriched layer serves as a buffer between Si substrate and the 3C-SiC film aimed at growing on Si(001). Such parameters as substrate temperature and process duration come into a complicated interplay of C deposition, its reaction with Si and out-diffusion of the later from the substrate. Three distinct regimes, namely graphite dominated, carbide dominated and roughness dominated are found to result from this interplay. Y1 - 2004 SN - 0031-8965 VL - 201 IS - 2 SP - 245 EP - 248 ER - TY - CHAP A1 - Torche, Mohamed A1 - Müller, Klaus A1 - Henkel, Karsten A1 - Lupina, Grzegorz A1 - Goryako, Andrey A1 - Wollweber, Jürgen A1 - Schmeißer, Dieter T1 - Investigations of 3C-SiC growth on Si (001) T2 - Verhandlungen der Deutschen Physikalischen Gesellschaft N2 - Carbide was grown on Si (001) - substrates with supply of C2H2. Investigation of the interface Si/SiC (buffer layer) is essential for optimized preparation conditions, leading to a high quality of the growing SiC crystal. In addition to the lattice mismatch of 20 per cent between Si and SiC, which causes defects like dislocations or stacking faults, the chemical homogeneity of this layer is important. XPS was used to characterize the first state of SiC crystal growth on the Si substrate. Carbonizing with C2H2 leads to surface reactions which build up the buffer layer. By using electron spectroscopy, it was possible to characterize the SiC/Si (001) buffer layer, depending on the following reaction parameters: Tsubstrate , PC2H2 , PH2 , the ratio of pressures and the reaction time. The measurements were performed in terms of the content of carbide, oxide and roughness/etching-efficiency (Profilometer) for the reaction parameters above. We found, that the most critical parameter is the temperature of the substrate (Tsubstrate). KW - 3C-SiC KW - chemical vapor deposition (CVD) KW - X-ray photoelectron spectroscopy (XPS) Y1 - 2004 UR - http://www.dpg-verhandlungen.de/year/2004/conference/regensburg/part/hl/session/44/contribution/42?lang=de PB - Deutsche Physikalische Gesellschaft CY - Bad Honnef ER -