TY - GEN A1 - Müller, Klaus A1 - Goryachko, Andriy A1 - Burkov, Yevgen A1 - Schwiertz, Carola A1 - Ratzke, Markus A1 - Köble, J. A1 - Reif, Jürgen A1 - Schmeißer, Dieter T1 - Scanning Kelvin Probe Microscopy and Photoemission electron microscopy of organic source-drain structures T2 - Synthetic Metals N2 - n order to optimize organic field effect transistors (OFETs), the characterisation of active-layer surfaces in terms of their roughness, chemical composition and distribution of surface potentials is important. We report on high-resolution microscopic mapping of organic source-drain structures with P3HT as the semiconductor by scanning Kelvin probe microscopy (SKPM) and photoemission electron microscopy (PEEM). It was shown that PEEM is able to characterise the surface morphology (roughness), the chemical homogeneity and the composition of organic structures. The two-dimensional mapping of surface potentials by SKPM with applied source-drain voltages is shown to be an important ingredient of OFETs failure mode analysis. KW - Photoemission electron microscopy (PEEM) KW - Scanning Kelvin probe microscopy (SKPM) KW - OFET Y1 - 2004 SN - 0379-6779 VL - 146 IS - 3 SP - 377 EP - 382 ER - TY - JOUR A1 - Schmeißer, Dieter A1 - Seibold, Götz A1 - Reif, Jürgen T1 - Nano-scaled Dielectric Barriers (NanoDieB) for CMOS compatible Si-technologies JF - Forum der Forschung KW - nano-scaled KW - dielectric KW - CMOS Y1 - 2006 SN - 0947-6989 IS - 19 SP - 131 EP - 136 ER -