TY - CHAP A1 - Lippert, Gunther A1 - Dabrowski, Jarek Marek A1 - Costina, Ioan A1 - Lupina, Grzegorz A1 - Ratzke, Markus A1 - Zaumseil, Peter A1 - Müssig, Hans-Joachim T1 - Morphology and Composition of Praseodymium Based High-k Materials and Their Relevance to Dielectric Properties of Thin-Films Y1 - 2007 ER - TY - GEN A1 - Taoka, Noriyuki A1 - Asano, Takanori A1 - Yamaha, Takashi A1 - Terashima, Tatsuya A1 - Nakatsuka, Osamu A1 - Costina, Ioan A1 - Zaumseil, Peter A1 - Capellini, Giovanni A1 - Zaima, Shigeaki A1 - Schroeder, Thomas T1 - Non-uniform depth distributions of Sn concentration induced by Sn migration and desorption during GeSnSi layer formation T2 - Applied Physics Letters Y1 - 2015 U6 - https://doi.org/10.1063/1.4908121 SN - 1077-3118 VL - 106 SP - 061107-1 EP - 061107-5 ER - TY - GEN A1 - Lippert, Gunther A1 - Dabrowski, Jarek Marek A1 - Oberbeck, Lars A1 - Schroeder, Uwe A1 - Costina, Ioan A1 - Lupina, Grzegorz A1 - Ratzke, Markus A1 - Zaumseil, Peter A1 - Müssig, Hans-Joachim T1 - Morphology and composition of selected high-k materials and their relevance to dielectric properties of thin films T2 - Journal of the electrochemical society Y1 - 2008 U6 - https://doi.org/10.1149/1.2875741 SN - 1945-7111 VL - 155 IS - 5 SP - G97 EP - G114 ER - TY - GEN A1 - Sana, Prabha A1 - Tetzner, Henriette A1 - Dabrowski, Jarek Marek A1 - Tarnawska, Lidia Lupina A1 - Costina, Ioan A1 - Thapa, Sarad A1 - Storck, Peter A1 - Schröder, Thomas A1 - Zöllner, Marvin Hartwig T1 - Growth of ScN(111) on Sc₂O₃ (111) for GaN integration on Si(111): Experiment and ab initio calculations T2 - Journal of Applied Physics Y1 - 2016 U6 - https://doi.org/10.1063/1.4963826 SN - 1089-7550 SN - 0021-8979 VL - 120 SP - 135103 ER - TY - GEN A1 - Lukosius, Mindaugas A1 - Lippert, Gunther A1 - Dabrowski, Jarek Marek A1 - Kitzmann, Julia A1 - Lisker, Marco A1 - Kulse, Philipp A1 - Krüger, Andreas A1 - Fursenko, Oksana A1 - Costina, Ioan A1 - Trusch, Andreas A1 - Yamamoto, Yuji A1 - Wolff, Andre A1 - Mai, Andreas A1 - Schröder, Thomas T1 - Graphene Synthesis and Processing on Ge Substrates T2 - ECS transactions Y1 - 2016 U6 - https://doi.org/10.1149/07508.0533ecst SN - 1938-6737 SN - 1938-5862 VL - 75 IS - 8 SP - 533 EP - 540 ER - TY - GEN A1 - Kosto, Yuliia A1 - Tschammer, Rudi A1 - Morales, Carlos A1 - Henkel, Karsten A1 - Flege, Jan Ingo A1 - Ratzke, Markus A1 - Fischer, Inga Anita A1 - Costina, Ioan A1 - Alvarado Chavarin, Carlos A1 - Wenger, Christian T1 - Rational design and development of room temperature hydrogen sensors compatible with CMOS technology: a necessary step for the coming renewable hydrogen economy T2 - Proceedings of iCampus Conference Cottbus 2024 N2 - The transition towards a new, renewable energy system based on green energy vectors, such as hydrogen, requires not only direct energy conversion and storage systems, but also the development of auxiliary components, such as highly sensitive hydrogen gas sensors integrated into mass devices that operate at ambient conditions. Despite the recent advances in nanostructured metal oxide thin films in terms of simple fabrication processes and compatibility with integrated circuits, high sensitivity, and short response/recovery times usually require the use of expensive noble metals or elevated tem-peratures (>250 ºC), which results in high power consumption and poor long-term stability. This article presents the first steps of the work on developing a novel resistive hydrogen gas sensor based on ultrathin cerium oxide films, compatible with complementary metal oxide semiconductor technology and capable of operating at room temperature. Here, we show a multidisciplinary bottom-up approach combining different work areas for the sensor development, such as sensor architecture, sensing mechanism and deposition strategy of the active layer, electrical contact design depending on the desired electrical output, and fast testing under controlled environments. KW - gas sensors KW - micro-structering KW - atomic layer deposition KW - sensor platform Y1 - 2024 SN - 978-3-910600-00-3 U6 - https://doi.org/10.5162/iCCC2024/P21 SP - 182 EP - 185 PB - AMA Service GmbH CY - Wunstorf ER -