TY - JOUR A1 - Mtchedlidze, T. A1 - Arguirov, Tzanimir V. A1 - Kittler, Martin A1 - Hoang, T. A1 - Hollemann, J. A1 - Schmitz, J. T1 - Influence of electric field on spectral positions of dislocation-related luminescence peaks in silicon: Stark effect Y1 - 2007 ER - TY - GEN A1 - Mtchedlidze, T. A1 - Arguirov, Tzanimir V. A1 - Kittler, Martin A1 - Hoang, T. A1 - Hollemann, J. A1 - LeMinh, P. A1 - Schmitz, J. T1 - Engineering of dislocation loops for light emission from silicon diodes T2 - Solid State Phenomena Y1 - 2008 SN - 1012-0394 VL - 131/133 SP - 303 EP - 308 ER - TY - GEN A1 - Hoang, T. A1 - Hollemann, J. A1 - LeMinh, P. A1 - Schmitz, J. A1 - Mtchedlidze, T. A1 - Arguirov, Tzanimir V. A1 - Kittler, Martin T1 - Influence of Dislocation Loops on the Near-Infrared Light Emission From Silicon Diodes T2 - IEEE transactions on electron devices Y1 - 2007 SN - 0018-9383 VL - 54 IS - 8 SP - 1860 EP - 1866 ER -