TY - GEN A1 - Aggour, Mohammed A1 - Stoerkel, Ulrich A1 - Murrell, Chris A1 - Campbell, S. A. A1 - Jungblut, H. A1 - Hoffmann, Patrick A1 - Mikalo, Ricardo Pablo A1 - Schmeißer, Dieter A1 - Lewerenz, Hans-Joachim T1 - Electrochemical interface modification of CuInS2 thin films N2 - We studied two novel electrochemical treatments of CuInS2 solar-cell absorber films, introduced to remove the deleterious segregated CuS phase. Their influence onsurface topography, chemistry and electronic properties was investigated using in situ atomic force microscopy (AFM) and photoclectron spectroscopy, performed inpart at the U49/2 undulator beam line at BESSY II. The results are examined in order to develop an improved understanding of the chemical-electrochemical surfacetransformation processes. KW - thin-film solar cells KW - copper indium disulfide KW - atomic force microscopy (AFM) KW - photoelectron spectroscopy KW - synchrotron radiation KW - Solar-Cell Y1 - 2002 ER - TY - GEN A1 - Lewerenz, Hans-Joachim A1 - Aggour, Mohammed A1 - Murrell, Chris A1 - Kanis, M. A1 - Hoffmann, Patrick A1 - Jungblut, H. A1 - Schmeißer, Dieter T1 - Interface engineering of photoelectrochemically prepared Si surfaces N2 - The oxide of Si(111) formed by electropolishing in dilute ammonium fluoride solution is analysed by photoelectron spectroscopy using synchrotron radiation. The oxidiclayer is about 3.1 nm thick and contains Si-F-x species as well as oxyfluorides. The oxyfluorides are found preferentially at the electropolishing layer surface. SiOHspecies are concentrated at the oxidic film/substrate interface. The full width half maximum of the Si 2p line indicates that the Si/electropolishing oxide interface issmoother than the Si/natural oxide interface. KW - Mean Free Paths KW - Silicon KW - Range Y1 - 2002 ER - TY - GEN A1 - Henkel, Karsten A1 - Sohal, Rakesh A1 - Torche, Mohamed A1 - Paloumpa, Ioanna A1 - Müller, Klaus A1 - Hoffmann, Patrick A1 - Schmeißer, Dieter T1 - Grenzflächenoptimierung für funktionale Dünnschichtsysteme: Oxide und Polymere T2 - Forum der Forschung Y1 - 2005 SN - 0947-6989 VL - 9 IS - 18 SP - 49 EP - 56 ER -