TY - JOUR A1 - Schmitt, Andrew L. A1 - Bierman, Matthew J. A1 - Schmeißer, Dieter A1 - Himpsel, Franz J. A1 - Jin, Song T1 - Synthesis and Properties of Single-Crystal FeSi Nanowires Y1 - 2006 ER - TY - JOUR A1 - Schmitt, Andrew L. A1 - Zhu, Lei A1 - Schmeißer, Dieter A1 - Himpsel, Franz J. A1 - Jin, Song T1 - Metallic Single-Crystal CoSi Nanowires via Chemical Vapor Deposition of Single-Source Precursor Y1 - 2006 ER - TY - GEN A1 - Schmeißer, Dieter A1 - Himpsel, Franz J. A1 - Denlinger, Jonathan D. A1 - Ederer, David L. T1 - Resonante Photoemission an der Cu2p Kante von Cu und CuO T2 - Forum der Forschung Y1 - 2005 SN - 0947-6989 VL - 9 IS - 18 SP - 57 EP - 62 ER - TY - CHAP A1 - Hoffmann, Patrick A1 - Schmeißer, Dieter A1 - Engelmann, Hans-Jürgen A1 - Zschech, Ehrenfried A1 - Stegmann, Heiko A1 - Himpsel, Franz J. A1 - Denlinger, Jonathan D. ED - Tsui, Ting Y. T1 - Characterization of chemical bonding in low-k dielectric materials for interconnect isolation: A XAS and EELS Study T2 - Materials, technology and reliability of low-k dielectrics and copper interconnects, symposium held April 18 - 21, 2006, San Francisco, California Y1 - 2006 SN - 978-1-55899-870-5 SP - 55 EP - 62 PB - Materials Research Society CY - Warrendale, Pa. ER - TY - CHAP A1 - Hoffmann, Patrick A1 - Schmeißer, Dieter A1 - Himpsel, Franz J. A1 - Engelmann, Hans-Jürgen A1 - Zschech, Ehrenfried A1 - Stegmann, Heiko A1 - Denlinger, Jonathan D. T1 - Characterization of Chemical Bonding in Low-K Dielectric Materials for Interconnect Isolation: XAS and EELS Study T2 - Verhandlungen der Deutschen Physikalischen Gesellschaft ; Reihe 6, Bd. 41 N2 - The use of low dielectric constant materials in the on-chip interconnect process reduces interconnect delay, power dissipation and crosstalk noise. In CVD deposited organo-silicate glass (OSG) the substitution of oxygen in SiO2 by methyl groups (-CH3) reduces the permittivity significantly (from 4.0 in SiO2 to 2.6-3.3 in the OSG). However, plasma processing removes C and H containing molecular groups. Therefore, compositional analysis and chemical bonding characterization of structured films with nanometer resolution is necessary. OSG thin films as-deposited and after plasma treatment are studied using XAS and EELS. In both techniques, the fine structure near the C1s edge allows to identify C-H, C-C, and C-O bonds. XAS spectra have been recorded for non-patterned films and EELS spectra for patterned structures. The chemical bonding is compared for as-deposited and plasma-treated low-k materials. The flu-orescence and the electron yield recorded while XAS measurement are compared. Examination of the C 1s near-edge structures reveal a mod-ified bonding of the remaining C atoms in the plasma-treated sample regions. Y1 - 2006 SN - 0420-0195 SP - S. 156 PB - Deutsche Physikalische Gesellschaft CY - Bad Honnef ER - TY - CHAP A1 - Schmeißer, Dieter A1 - Zheng, Fan A1 - Himpsel, Franz J. A1 - Engelmann, Hans-Jürgen A1 - Zschech, Ehrenfried T1 - Silicate Formation at the Interface of High-k Dielectrics and Si(001) Surfaces Y1 - 2006 ER -