TY - CHAP A1 - Müller, Klaus A1 - Bär, Werner A1 - Henkel, Karsten A1 - Jahnke, Agnes A1 - Schwiertz, Carola A1 - Schmeißer, Dieter T1 - Organische Feldeffekttransistoren als Transducer in der Biosensorik Y1 - 2003 SN - 3-935712-92-8 SP - 119 EP - 223 PB - w.e.b.-Univ.-Verl. CY - Dresden ER - TY - CHAP A1 - Henkel, Karsten A1 - Schwiertz, Carola A1 - Wagner, S. A1 - Valdeig, A. A1 - List, M. A1 - Schmeißer, Dieter T1 - Partikel- und Tropfendetektion im Mikrometerbereich mittels Schwingquarzen Y1 - 2003 SN - 3-935712-92-8 SP - 291 EP - 294 PB - w.e.b.-Univ.-Verl. CY - Dresden ER - TY - JOUR A1 - Goryachko, Andriy A1 - Yeromenko, Y. A1 - Henkel, Karsten A1 - Wollweber, Jürgen A1 - Schmeißer, Dieter T1 - The Si(001)/C2H2 interaction to form a buffer layer for 3C-SiC growth JF - Physica status solidi / A N2 - The intial stages of Si(001) interaction with C2H2 were investigated with XPS and surface profilometry. The carbon enriched layer serves as a buffer between Si substrate and the 3C-SiC film aimed at growing on Si(001). Such parameters as substrate temperature and process duration come into a complicated interplay of C deposition, its reaction with Si and out-diffusion of the later from the substrate. Three distinct regimes, namely graphite dominated, carbide dominated and roughness dominated are found to result from this interplay. Y1 - 2004 SN - 0031-8965 VL - 201 IS - 2 SP - 245 EP - 248 ER - TY - GEN A1 - Müller, Klaus A1 - Paloumpa, Ioanna A1 - Henkel, Karsten A1 - Schmeißer, Dieter T1 - A polymer high-k dielectric insulator for organic field effect Transistors T2 - Journal of Applied Physics Y1 - 2005 SN - 0021-8979 VL - 98 IS - 5 SP - S. 056104 ER - TY - GEN A1 - Henkel, Karsten A1 - Sohal, Rakesh A1 - Torche, Mohamed A1 - Paloumpa, Ioanna A1 - Müller, Klaus A1 - Hoffmann, Patrick A1 - Schmeißer, Dieter T1 - Grenzflächenoptimierung für funktionale Dünnschichtsysteme: Oxide und Polymere T2 - Forum der Forschung Y1 - 2005 SN - 0947-6989 VL - 9 IS - 18 SP - 49 EP - 56 ER - TY - JOUR A1 - Müller, Klaus A1 - Paloumpa, Ioanna A1 - Schmeißer, Dieter A1 - Henkel, Karsten T1 - Organic thin film transistors with polymer high-k dielectric insulator KW - high-k Y1 - 2006 ER - TY - JOUR A1 - Torche, Mohamed A1 - Henkel, Karsten A1 - Schmeißer, Dieter T1 - The interaction of Al, Ag, Au and Ti to Pr2O3 thin film dielectrics KW - thin films KW - Pr2O3 Y1 - 2006 ER - TY - JOUR A1 - Henkel, Karsten A1 - Sohal, Rakesh A1 - Schmeißer, Dieter A1 - Schwiertz, Carola A1 - Burkov, Yevgen A1 - Torche, Mohamed T1 - Al-oxynitride buffer layer facilities for PrOx/SiC interfaces Y1 - 2007 ER - TY - JOUR A1 - Müller, Klaus A1 - Henkel, Karsten A1 - Schmeißer, Dieter T1 - Organic field effect transistors with ferroelectric hysteresis Y1 - 2007 ER - TY - JOUR A1 - Schmeißer, Dieter A1 - Burkov, Yevgen A1 - Paloumpa, Ioanna A1 - Mandal, Dipankar A1 - Henkel, Karsten T1 - Microscopic and Spectroscopic Characterization of Interfaces and Dielectric Layers for OFET Devices Y1 - 2008 ER - TY - JOUR A1 - Schmeißer, Dieter A1 - Henkel, Karsten A1 - Karavaev, Konstantin T1 - Al-Oxynitride Interfacial Layer Investigations for PrxOy on SiC and Si Y1 - 2008 ER - TY - GEN A1 - Henkel, Karsten A1 - Torche, Mohamed A1 - Sohal, Rakesh A1 - Karavaev, Konstantin A1 - Burkov, Yevgen A1 - Schwiertz, Carola A1 - Schmeißer, Dieter T1 - Pr-O-Al-N dielectrics for metal insulator semiconductor stacks KW - semiconductor KW - dielectric Y1 - 2011 ER - TY - GEN A1 - Müller, Klaus A1 - Henkel, Karsten A1 - Mandal, Dipankar A1 - Seime, Bernd A1 - Paloumpa, Ioanna A1 - Schmeißer, Dieter T1 - Spin coated organic ferroelectric films for non volatile memories KW - organic KW - ferroelectric Y1 - 2011 ER - TY - GEN A1 - Koval, Yuri A1 - Lazareva, I. A1 - Müller, P. A1 - Müller, Klaus A1 - Henkel, Karsten A1 - Friedrich, Daniel T1 - Field effect transistors on graphitized polymer surfaces KW - transistors KW - polymer Y1 - 2011 ER - TY - GEN A1 - Mandal, Dipankar A1 - Henkel, Karsten A1 - Müller, Klaus A1 - Schmeißer, Dieter T1 - Band gab determination of P(VDF-TrFE) copolymer film by electron energy loss spectroscopy Y1 - 2010 ER - TY - GEN A1 - Henkel, Karsten A1 - Seime, Bernd A1 - Paloumpa, Ioanna A1 - Müller, Klaus A1 - Schmeißer, Dieter T1 - Buffer layer incestigaions on MFIS capacitors consisting of ferroelectric poly[vinylidene fluoride trifluoroethylene] T2 - IOP conference series : Materials Science and Engineering KW - MFIS capacitors KW - ferroelectric Y1 - 2010 SN - 1757-899X VL - 8 IS - 1 SP - 012036 ER - TY - GEN A1 - Schmeißer, Dieter A1 - Henkel, Karsten A1 - Bergholz, Matthias A1 - Tallarida, Massimo T1 - The band gab and band offset in ultrathin oxide-semiconductor heterostructures KW - band gab KW - offset KW - ultrathin KW - heterostructures Y1 - 2010 ER - TY - CHAP A1 - Schwiertz, Carola A1 - Henkel, Karsten A1 - Blei, S. A1 - Heidenreich, R. A1 - Schmeißer, Dieter T1 - Nachweis von Aerosolen (<1µm) mit Schwingquarzimpedanzspektroskopie KW - Schwingquarzimpedanzspektroskopie Y1 - 2009 ER - TY - GEN A1 - Schmeißer, Dieter A1 - Henkel, Karsten A1 - Müller, Klaus A1 - Tallarida, Massimo T1 - Interface Reactions in Ultrathin Functional Dielectric Films KW - ultrathin KW - dielectric Y1 - 2009 ER - TY - GEN A1 - Schmeißer, Dieter A1 - Tallarida, Massimo A1 - Henkel, Karsten A1 - Müller, Klaus A1 - Mandal, Dipankar A1 - Chumakov, Dmytro A1 - Zschech, Ehrenfried T1 - Characterization of oxidic and organic materials with synchrotron radiation based XPS and XAS KW - oxidic KW - organic KW - materials KW - synchrotron radiation KW - XPS KW - XAS Y1 - 2009 ER - TY - GEN A1 - Lazareva, I. A1 - Koval, Yuri A1 - Müller, P. A1 - Müller, Klaus A1 - Henkel, Karsten A1 - Schmeißer, Dieter T1 - Interface screening and imprint in pol(vinylidene fluoride/trifluoroethylene) ferroelectric field effect transistors KW - interface KW - screening KW - transistors Y1 - 2009 ER - TY - CHAP A1 - Müller, Klaus A1 - Burkov, Yevgen A1 - Mandal, Dipankar A1 - Henkel, Karsten A1 - Paloumpa, Ioanna A1 - Goryachko, Andriy A1 - Schmeißer, Dieter ED - Wöll, Christof T1 - Microscopic and spectroscopic characterization of interfaces and dielectric layers for OFET devices T2 - Organic Electronics : structural and Electronic Properties of OFETs KW - microscopic KW - spectrocsopic KW - dielectric Y1 - 2009 SN - 978-3-527-40810-8 SP - 445 EP - 468 PB - Wiley-VCH CY - Weinheim ER - TY - GEN A1 - Henkel, Karsten A1 - Lazareva, I. A1 - Mandal, Dipankar A1 - Paloumpa, Ioanna A1 - Müller, Klaus A1 - Koval, Yuri A1 - Müller, P. A1 - Schmeißer, Dieter T1 - Electrical investigations on metal/ferroelectric/insulator/semiconductor structures using Poly[vinylidene fluoride trifluoroethylene] as ferroelectric layer for organic nonvolatile memory applications KW - metal KW - frerroelectric KW - insulator KW - semiconductor Y1 - 2009 ER - TY - GEN A1 - Henkel, Karsten A1 - Burkov, Yevgen A1 - Karavaev, Konstantin A1 - Torche, Mohamed A1 - Schwiertz, Carola A1 - Schmeißer, Dieter T1 - Optimization of the AION buffer layer for PrxOy/Si stacks KW - AION buffer Y1 - 2009 ER - TY - JOUR A1 - Müller, Klaus A1 - Mandal, Dipankar A1 - Henkel, Karsten A1 - Paloumpa, Ioanna A1 - Schmeißer, Dieter T1 - Ferroelectric properties of spin-coated ultrathin (down to 10nm) copolymer films KW - ferroelectric KW - spin-coated KW - copolymer Y1 - 2008 ER - TY - CHAP A1 - Henkel, Karsten A1 - Burkov, Yevgen A1 - Bergholz, Matthias A1 - Karavaev, Konstantin A1 - Sohal, Rakesh A1 - Torche, Mohamed A1 - Schmeißer, Dieter T1 - Al-Oxynitride as a buffer layer for high-k dielectrics T2 - Proceedings of 15th Workshop on Dielectrics in Microelectronics, Bad Saarow, 23 - 25 June 2008, Bad Saarow (Berlin) KW - buffer layer KW - high-k KW - dielectric Y1 - 2008 SP - 161 EP - 162 ER - TY - CHAP A1 - Henkel, Karsten A1 - Mandal, Dipankar A1 - Seime, Bernd A1 - Paloumpa, Ioanna A1 - Lazareva, I. A1 - Müller, Klaus A1 - Schmeißer, Dieter T1 - Electrical investigations on MFIS structures consisting P[VDF/TrFE] as ferro-electric layer for non-volatile memory applications T2 - Proceedings of 15th Workshop on Dielectrics in Microelectronics, Bad Saarow, 23 - 25 June 2008, Bad Saarow (Berlin) KW - MFIS, P[VDF/TrFE] KW - ferroelectric KW - non-volatile Y1 - 2008 SP - 159 EP - 160 ER - TY - CHAP A1 - Broczkowska, K. A1 - Klocek, Jolanta A1 - Friedrich, Daniel A1 - Henkel, Karsten A1 - Kolanek, Krzysztof A1 - Urbanowicz, A. A1 - Schmeißer, Dieter A1 - Miller, M. A1 - Zschech, Ehrenfried T1 - Fullerene based materials for ultra-low-k application T2 - International Students and Young Scientists Workshop "Photonics and Microsystems", Szklarska, Poreba, Poland, 25 - 27 June 2010 Y1 - 2010 SN - 978-1-4244-8324-2 SP - 39 EP - 43 PB - IEEE CY - Piscataway, NJ ER - TY - GEN A1 - Henkel, Karsten A1 - Seime, Bernd A1 - Paloumpa, Ioanna A1 - Müller, Klaus A1 - Schmeißer, Dieter T1 - Optimization of MFIS structures containing poly(vinylidene-fluoride trifluoroethylene) for non-volatile memory applications Y1 - 2010 ER - TY - GEN A1 - Henkel, Karsten A1 - Seime, Bernd A1 - Paloumpa, Ioanna A1 - Müller, Klaus A1 - Schmeißer, Dieter T1 - Buffer layer investigations on MFIS capacitors consisting of ferroelectric poly[vinylidene fluoride trifluoroethylene] Y1 - 2010 ER - TY - GEN A1 - Mandal, Dipankar A1 - Henkel, Karsten A1 - Schmeißer, Dieter T1 - Comment on "Preparation and Characterization of Silver-Poly(vinylidene fluoride) Nanocomposites:Formation of Piezoelectric Polymorph of Poly(vinylidene fluoride" Y1 - 2011 ER - TY - JOUR A1 - Henkel, Karsten A1 - Karavaev, Konstantin A1 - Torche, Mohamed A1 - Schwiertz, Carola A1 - Burkov, Yevgen A1 - Schmeißer, Dieter T1 - Al-Oxyxynitride interfacial layer investigations for PrXOY on SiC and Si Y1 - 2008 ER - TY - CHAP A1 - Henkel, Karsten A1 - Torche, Mohamed A1 - Sohal, Rakesh A1 - Schwiertz, Carola A1 - Hoffmann, Patrick A1 - Schmeißer, Dieter ED - Dudley, Michael T1 - Pr-O-N Dielectrics for MIS Stacks on Silicon and Silicon Carbide Surfaces T2 - Silicon carbide 2006 - materials, processing and devices, symposium held April 18 - 20, 2006, San Francisco, California, U.S.A. Y1 - 2006 SN - 978-1-55899-867-4 SP - 353 EP - 358 PB - Materials Research Society CY - Warrendale, Pa. ER - TY - JOUR A1 - Henkel, Karsten A1 - Schmeißer, Dieter T1 - Back-propagation based neural network with a two sensor system for monitoring of carbon dioxide and relative humidity Y1 - 2002 ER - TY - RPRT A1 - Schwiertz, Carola A1 - Henkel, Karsten A1 - Paloumpa, Ioanna A1 - Schmeißer, Dieter A1 - Kamieth, P. A1 - Schnegber, P. T1 - Aufbau eines Sensorarrays zur Detektion von umwelt- und tierphysiologisch relevanten Komponenten Y1 - 2001 ER - TY - RPRT A1 - Henkel, Karsten A1 - Paloumpa, Ioanna A1 - Schwiertz, D. A1 - Schmeißer, Dieter A1 - Kamieth, P. A1 - Schengber, P. T1 - Gezielte Entwicklung von Sensormaterialien und Sensoren zur spezifischen Detektion von schwefel- und stickstoffhaltigen Stoffgruppen Y1 - 2001 ER - TY - JOUR A1 - Henkel, Karsten A1 - Paloumpa, Ioanna A1 - Schwiertz, B. A1 - Elling, B. A1 - Danz, R. A1 - Büchtemann, A. A1 - Straube, Oliver A1 - Schmeißer, Dieter T1 - Kraftsensoren aus Polymerfolien-Piezoelektrische Polymersensoren für Hochdruckanwendungen Y1 - 2001 ER - TY - RPRT A1 - Henkel, Karsten A1 - Paloumpa, Ioanna A1 - Oprea, A. A1 - Appel, Günter A1 - Schmeißer, Dieter A1 - Frandsen, W. A1 - Schölzel, Mario T1 - Entwicklung von Sensoren mit Elektroden aus leitfähigen Polymeren Y1 - 2000 N1 - Teilbericht 16SV335/7 im Gemeinsamen Abschlussbericht zum Verbundprojekt "Sensoren mit mikrostrukturierten Elektroden aus leitfähigen Polymeren", März 2000, Kurzfassung ER - TY - JOUR A1 - Appel, Günter A1 - Mikalo, Ricardo Pablo A1 - Henkel, Karsten A1 - Oprea, A. A1 - Yfantis, Alexandros D. A1 - Paloumpa, Ioanna A1 - Schmeißer, Dieter T1 - Polymeric Electrodes Y1 - 2000 ER - TY - JOUR A1 - Oprea, A. A1 - Henkel, Karsten A1 - Oehmgen, R. A1 - Appel, Günter A1 - Schmeißer, Dieter A1 - Lauer, H. A1 - Hausmann, P. T1 - Increased sensor sensitivities obtained by polymer coated quartz microbalances Y1 - 1999 ER - TY - GEN A1 - Friedrich, Daniel A1 - Henkel, Karsten A1 - Richter, Matthias A1 - Schmeißer, Dieter T1 - Fullerenol as probed by Synchrotron X-Ray Photoemission and Absorption Spectroscopy Y1 - 2011 ER - TY - CHAP A1 - Mandal, Dipankar A1 - Henkel, Karsten A1 - Schmeißer, Dieter T1 - Control of the Crystalline Polymorph, Molecular Dipole and Chain Orientations in P(VDF-HFP) for High Electrical Energy Storage Application T2 - International Conference on Nanoscience, Technology and Societal Implications (NSTSI), 2011 Y1 - 2012 SN - 978-1-4577-2035-2 U6 - https://doi.org/10.1109/NSTSI.2011.6111801 PB - IEEE ER - TY - GEN A1 - Klocek, Jolanta A1 - Henkel, Karsten A1 - Kolanek, Krzysztof A1 - Broczkowska, K. A1 - Schmeißer, Dieter A1 - Miller, M. A1 - Zschech, Ehrenfried T1 - Studies of the chemical and electrical properties of fullerene and 3-aminopropyltrimethoxysilane based low-k materials T2 - Thin Solid Films Y1 - 2012 SN - 0040-6090 VL - 520 IS - 7 SP - 2498 EP - 2504 ER - TY - GEN A1 - Mandal, Dipankar A1 - Henkel, Karsten A1 - Schmeißer, Dieter T1 - The electroactive Beta-phase formation in Poly(vinylidene fluoride) by gold nanoparticles doping T2 - Materials Letters Y1 - 2012 SN - 0167-577X IS - 73 SP - 123 EP - 125 ER - TY - GEN A1 - Klocek, Jolanta A1 - Henkel, Karsten A1 - Kolanek, Krzysztof A1 - Zschech, Ehrenfried A1 - Schmeißer, Dieter T1 - Annealing influence on siloxane based materials incorporated with fullerenes, phthalocyanines and silsesquioxanes T2 - BioNanoScience Y1 - 2012 SN - 2191-1630 VL - 2 IS - 1 SP - 52 EP - 58 ER - TY - GEN A1 - Klocek, Jolanta A1 - Henkel, Karsten A1 - Kolanek, Krzysztof A1 - Zschech, Ehrenfried A1 - Schmeißer, Dieter T1 - Spectroscopic and capacitance-voltage characterization of thin aminopropylmethoxysilane films doped with copper phthalocyanine, tris(dimethylvinylsilyloxy)-POSS and fullerene cages T2 - Applied surface science Y1 - 2012 SN - 0169-4332 VL - 258 IS - 10 SP - 4213 EP - 4221 ER - TY - GEN A1 - Klocek, Jolanta A1 - Kolanek, Krzysztof A1 - Henkel, Karsten A1 - Zschech, Ehrenfried A1 - Schmeißer, Dieter T1 - Influence of the fullerene derivatives and cage polyhedral oligomeric silsesquioxanes on 3-aminopropyltrimethoxysilane based hybrid nanocomposites chemical, morphological and electrical properties T2 - Journal of Physics and Chemistry of Solids N2 - In this study we produced 3-aminopropyltrimethoxysilane based hybrid nanocomposites using fullerene derivative [6,6]–phenyl–C61–butyric acid methyl ester (PCBM) as nanodopants. Additionally, we modified obtained material with incompletely condensed cage polyhedral oligomeric silsesqiuox-anes (POSS) in order to improve its properties. Thin films were deposited by means of the spin-coating method. The films were characterized by atomic force microscopy (AFM), X-ray photoelectron spectroscopy (XPS) and capacitance–voltage (CV) measurements. We observed that a properly chosen PCBM concentration may be a crucial factor to obtain high quality APTMS based films by the spin-coating technique. XPS revealed the presence of the C-NH-C species within POSS containing films indicating chemical interaction between the amino group of APTMS and the POSS molecules. AFM results suggest that at high POSS monomer concentration in the range of 1% the creation of fractal-shaped aggregates takes place. The CV characterization of the samples exhibits a decrease of the APTMS based films dielectric constant due to the POSS and PCBM contribution. The combination of the applied methods delivers complementary information concerning the properties of the analyzed films. KW - low-k KW - fullerene KW - aminopropyltrimethoxysilane KW - silsesqiuoxane KW - X-ray photoelectron spectroscopy (XPS) KW - Atomic force microscopy (AFM) KW - Capacitance voltage (CV) Y1 - 2013 U6 - https://doi.org/10.1016/j.jpcs.2012.08.013 SN - 0022-3697 VL - 74 IS - 1 SP - 135 EP - 145 ER - TY - GEN A1 - Mandal, Dipankar A1 - Müller, Klaus A1 - Henkel, Karsten A1 - Schmeißer, Dieter T1 - The effect of X-ray photoelectron spectroscopy measurement on P(VDF-TrFE) copolymer thin films T2 - Applied Surface Science N2 - The impact of prolonged X-ray irradiation during X-ray photoelectron spectroscopy (XPS) measurement was investigated on poly(vinylidene-trifluoroethylene) (P(VDF-TrFE)) thin films. It was observed that prolonged X-ray irradiation can accelerate the crosslinking of P(VDF-TrFE) and diminish the ferroelectric phase. Fourier transform infrared spectroscopy (FT-IR) data indicate that the ferroelectric phase diminishes completely after 360 kJ of X-ray irradiation dose and it induces the paraelectric phase. In this work, the main emphasis was given to the optimization of the X-ray irradiation dose during XPS measurements to maintain the ferroelectric phase within the copolymer films. KW - P(VDF-TrFE) copolymer thin film KW - XPS measurement KW - X-ray irradiation KW - Ferroelectric to paraelectric phase transformation Y1 - 2012 U6 - https://doi.org/10.1016/j.apsusc.2012.07.144 SN - 0169-4332 SN - 1873-5584 IS - 261 SP - 209 EP - 213 ER - TY - CHAP A1 - Mandal, Dipankar A1 - Henkel, Karsten A1 - Das, Suken A1 - Schmeißer, Dieter ED - Heber, Jörg ED - Schlom, Darrell ED - Tokura, Yoshinori ED - Waser, Rainer ED - Wuttig, Matthias T1 - Control of β- and γ-Phase formation in electroactive P(VDF-HFP) films by silver nano-particle doping T2 - Frontiers in Electronic Materials: A Collection of Extended Abstracts of the Nature Conference Frontiers in Electronic Materials, June 17 to 20 2012, Aachen, Germany KW - P(VDF.HFP) KW - electroactive phase KW - nanoparticle doping KW - FTIR Y1 - 2012 SN - 978-3-527-41191-7 U6 - https://doi.org/10.1002/9783527667703.ch69 SP - 640 EP - 641 PB - Wiley-VCH CY - Weinheim ER - TY - THES A1 - Henkel, Karsten T1 - Electrical Investigations on Praseodymium Oxide/Aluminum Oxynitride Containing Metal-Insulator-Semiconductor Stacks and on Metal-Ferroelectric-Insulator-Semiconductor Structures Consisting of Poly[vinylidene fluoride trifluoroethylene] N2 - In this thesis electrical characterizations on metal-insulator-semiconductor (MIS) and metal-ferroelectric-insulator-semiconductor (MFIS) stacks are presented. The results are discussed in terms of the increase of the performance of these stacks in order to optimize the characteristics of devices like the field effect transistor (FET) for logic applications and the ferroelectric field effect transistor (FeFET) for non-volatile and non-destructive readout memory applications. Therefor, two material classes are investigated. Firstly, this work focuses on praseodymium oxide (PrxOy) films as a high-kmaterial on silicon (Si) and silicon carbide in MISsamples. In particular the improvement of the performance by the introduction of an aluminum oxynitride buffer layer, which acts as an interdiffusion barrier and reduces the leakage current, the interface state density and the equivalent oxide thickness, is demonstrated. Secondly, in this work the very attractive ferroelectric material poly[vinylidene fluoride trifluoroethylene] (P[VDF/TrFE]) is introduced in MFIS stacks on Si. The way of successive improvements of the MFIS stack is extensively discussed. Here, the optimization of the preparation of the samples as well as of the layer parameters in the sequence of the MFIS stacks is depicted. An improved long time stability of the memory functionof the MFIS stack with a partially optimized layer sequence is exhibited. The electrical results are correlated to spectroscopic findings on both material systems. Strong interfacial reactions between the PrxOy and Si as well as between the aluminum electrode and the P[VDF/TrFE] layer are observed. For both systems the importance of a buffer layer is discussed and its optimization is addressed, too. On both systems a very nice, as consistent, chain of improvements is shown caused by the spectroscopic controlled preparation combined with electrical measurements in order to obtain the functionality of a given material system. KW - Pr2O3 KW - P(VDF-TrFE) KW - capacitance-voltage KW - conductance-voltage KW - current-voltage KW - dielectric properties KW - high-k KW - feFET Y1 - 2009 SN - 978-3-8322-8404-6 PB - Shaker CY - Aachen ER - TY - GEN A1 - Haeberle, Jörg A1 - Henkel, Karsten A1 - Gargouri, Hassan A1 - Naumann, Franziska A1 - Gruska, Bernd A1 - Arens, Michael A1 - Tallarida, Massimo A1 - Schmeißer, Dieter T1 - Ellipsometry and XPS comparative studies of thermal and plasma enhanced atomic layer deposited Al2O3-films T2 - Beilstein Journal of Nanotechnology N2 - We report on results on the preparation of thin (<100 nm) aluminum oxide (Al2O3) films on silicon substrates using thermal atomic layer deposition (T-ALD) and plasma enhanced atomic layer deposition (PE-ALD) in the SENTECH SI ALD LL system. The T-ALD Al2O3layers were deposited at 200 °C, for the PE-ALD films we varied the substrate temperature range between room temperature (rt) and 200 °C. We show data from spectroscopic ellipsometry (thickness, refractive index, growth rate) over 4” wafers and correlatethem to X-ray photoelectron spectroscopy (XPS) results. The 200°C T-ALD and PE-ALD processes yield films with similar refractive indices and with oxygen to aluminum elemental ratios very close to the stoichiometric value of 1.5. However, in both also fragments of the precursor are integrated into the film. The PE-ALD films show an increased growth rate and lower carbon contaminations. Reducing the deposition temperature down to rt leads to a higher content of carbon and CH-species. We also find a decrease of the refractive index and of the oxygen to aluminum elemental ratio as well as an increase of the growth rate whereas the homogeneity of the film growth is not influenced significantly. Initial state energy shifts in all PE-ALD samples are observed which we attribute to a net negative charge within the films. KW - Al2O3 KW - ALD KW - ellipsometry KW - PE-ALD KW - XPS Y1 - 2013 U6 - https://doi.org/10.3762/bjnano.4.83 SN - 2190-4286 VL - 2013 IS - 4 SP - 732 EP - 742 ER -