TY - GEN A1 - Vinuesa, Guillermo A1 - García, Héctor A1 - Pérez, Eduardo A1 - Wenger, Christian A1 - Íñiguez de la Torre, Ignacio A1 - González, Tomás A1 - Dueñas, Salvador A1 - Castán, Helena T1 - On the asymmetry of Resistive Switching Transitions T2 - Electronics N2 - In this study, the resistive switching phenomena in TiN/Ti/HfO2/Ti metal–insulator–metal stacks is investigated, mainly focusing on the analysis of set and reset transitions. The electrical measurements in a wide temperature range reveal that the switching transitions require less voltage (and thus, less energy) as temperature rises, with the reset process being much more temperature sensitive. The main conduction mechanism in both resistance states is Space-charge-limited Conduction, but the high conductivity state also shows Schottky emission, explaining its temperature dependence. Moreover, the temporal evolution of these transitions reveals clear differences between them, as their current transient response is completely different. While the set is sudden, the reset process development is clearly non-linear, closely resembling a sigmoid function. This asymmetry between switching processes is of extreme importance in the manipulation and control of the multi-level characteristics and has clear implications in the possible applications of resistive switching devices in neuromorphic computing. KW - resistive switching KW - RRAM KW - memristor KW - transient KW - temperature dependence KW - low power consumption Y1 - 2024 U6 - https://doi.org/10.3390/electronics13132639 SN - 2079-9292 VL - 13 IS - 13 PB - MDPI ER -