TY - JOUR A1 - Rudolph, Matthias A1 - Meliani, Chafik A1 - Dörner, Ralf A1 - Heinrich, Wolfgang T1 - Bandwidth Potential of HBT-Based TWAs as a Function of Transistor fmax/fT Ratio Y1 - 2008 ER - TY - JOUR A1 - Rudolph, Matthias A1 - Khalil, I. A1 - Liero, Armin A1 - Lossy, Richard A1 - Heinrich, Wolfgang T1 - GaN HEMT Potential for Low Noise Highly Linear RF Applications Y1 - 2008 ER - TY - GEN A1 - Rudolph, Matthias A1 - Chaturvedi, Nidhi A1 - Hirche, Klaus A1 - Wurfl, K. A1 - Heinrich, Wolfgang A1 - Tränkle, Günther T1 - Highly Rugged 30 GHz GaN Low-Noise Amplifiers Y1 - 2009 ER - TY - JOUR A1 - Rudolph, Matthias A1 - Tischler, Th. A1 - Kilk, A. A1 - Heinrich, Wolfgang T1 - Via Arrays for Grounding in Multilayer Packaging - Frequency Limits and Design Rules Y1 - 2003 ER - TY - JOUR A1 - Rudolph, Matthias A1 - Meliani, Chafik A1 - Heinrich, Wolfgang T1 - A 40 Gbps GaAs-HBT Distributed Amplifier with an Over-fT Cut-Off Frequency: Analyticaland Experimental Study Y1 - 2005 ER - TY - JOUR A1 - Rudolph, Matthias A1 - Behtash, Reza A1 - Hirche, Klaus A1 - Würfl, Joachim A1 - Heinrich, Wolfgang A1 - Tränkle, Günther T1 - A Highly Survivable 3-7 GHz GaN Low-Noise Amplifier Y1 - 2006 ER - TY - GEN A1 - Rudolph, Matthias A1 - Meliani, Chafik A1 - Kurpas, Paul A1 - Schmidt, L. A1 - Rheinfelder, C. N. A1 - Heinrich, Wolfgang T1 - A 2.4 GHz GaAs-HBT Class-E MMIC Amplifier with 65% PAE Y1 - 2007 ER - TY - GEN A1 - Rudolph, Matthias A1 - Dewitz, Mike A1 - Liero, Armin A1 - Khalil, I. A1 - Chaturvedi, Nidhi A1 - Wipf, Christian A1 - Bertenburg, R. M. A1 - Miller, J. A1 - Würfl, Joachim A1 - Heinrich, Wolfgang A1 - Tränkle, Günther T1 - Highly Robust X-Band LNA with Extremely Short Recovery Time Y1 - 2009 ER - TY - CHAP A1 - Rudolph, Matthias A1 - Kurpas, Paul A1 - Brunner, F. A1 - Doser, W. A1 - Maaßdorf, Andre A1 - Dörner, Ralf A1 - Blanck, H. A1 - Heinrich, Wolfgang A1 - Würfl, Joachim T1 - Development and Characterization of GaInP/GaAs HBTs for High Voltage Operation Y1 - 2001 ER - TY - CHAP A1 - Rudolph, Matthias A1 - Meliani, Chafik A1 - Hilsenbeck, Jochen A1 - Heinrich, Wolfgang T1 - A GaAs-HBT Distributed Amplifier with Near-fT Cut-off Frequency for High-Bitrate Transmissions Y1 - 2004 ER - TY - CHAP A1 - Rudolph, Matthias A1 - Schnieder, Frank A1 - Heinrich, Wolfgang A1 - Schnieder, Frank T1 - Investigation of Thermal Crunching Effects in Fishbone-Type Layout Power GaAs-HBTs Y1 - 2004 ER - TY - CHAP A1 - Rudolph, Matthias A1 - Meliani, Chafik A1 - Hilsenbeck, Jochen A1 - Heinrich, Wolfgang A1 - Meliani, Chafik T1 - A 40 Gbps Broadband Amplifier for Modulator-Driver Applications Using a GaAs HBT Technology Y1 - 2004 ER - TY - CHAP A1 - Rudolph, Matthias A1 - Meliani, Chafik A1 - Heinrich, Wolfgang T1 - On-Chip GaAs-HBT Broadband-Coupled High-Bitrate Modulator Driver TWAs Y1 - 2005 ER - TY - CHAP A1 - Rudolph, Matthias A1 - Schnieder, Frank A1 - Schmückle, Franz-Josef A1 - Heinrich, Wolfgang T1 - An Analysis of Source Connections in GaN Power Transistor Packages T2 - Proceedings, Microwave Conference (GeMiC), 2012 The 7th in Ilmenau, Germany Y1 - 2012 SN - 978-3-9812668-4-9 CY - Ilmenau ER - TY - CHAP A1 - Rudolph, Matthias A1 - Dörner, Ralf A1 - Ngnintedem, Eric A1 - Heinrich, Wolfgang T1 - Noise Modeling of GaN HEMT Devices T2 - Microwave Integrated Circuits Conference (EuMIC), 2012 7th European , Amsterdam Y1 - 2012 UR - http://ieeexplore.ieee.org/xpl/mostRecentIssue.jsp?punumber=6476772 SN - 978-1-4673-2302-4 SN - 978-2-87487-026-2 SP - 159 EP - 162 PB - IEEE CY - Piscataway, NJ ER - TY - CHAP A1 - Andrei, Cristina A1 - Dörner, Ralf A1 - Bengtsson, Olof A1 - Chevtchenko, Serguei A. A1 - Heinrich, Wolfgang A1 - Rudolph, Matthias T1 - Highly Linear X-Band GaN-Based Low-Noise Amplifier T2 - Signals, Systems, and Electronics (ISSSE), 2012 International Symposium on , Potsdam Y1 - 2012 UR - http://ieeexplore.ieee.org/xpl/mostRecentIssue.jsp?punumber=6362332 SN - 978-1-4673-4454-8 SN - 978-1-4673-4453-1 PB - IEEE CY - Piscataway, NJ ER - TY - CHAP A1 - Lenk, Friedrich A1 - Klockenhoff, Harald A1 - Maaßdorf, Andre A1 - Würfl, Joachim A1 - Heinrich, Wolfgang T1 - A 3.2 W coplanar single-device X-band amplifier with GaAs HBT T2 - Gallium Arsenide and Other Semiconductor Application Symposium, 2005, EGAAS 2005 N2 - High-power GaInP/GaAs HBTs with high breakdown voltage for X-band applications are presented. To demonstrate the capabilities of these devices, a simple monolithic amplifier is realized. For a single 12-finger device with 2/spl times/70 /spl mu/m/sup 2/ emitter finger size, an output power of 3.2 W at 9 GHz with 47% PAE is achieved. Y1 - 2005 UR - http://ieeexplore.ieee.org/stamp/stamp.jsp?arnumber=1637147 SN - 88-902012-0-7 SP - 49 EP - 52 PB - Horizon House Publ. CY - London ER - TY - CHAP A1 - Lenk, Friedrich A1 - Schott, Matthias A1 - Hilsenbeck, Jochen A1 - Heinrich, Wolfgang T1 - Low phase-noise GaAs-HBT monolithic W-band oscillator T2 - 34th European Microwave Conference, Tuesday 12th, Wednesday 13th and Thursday 14th October Y1 - 2004 SN - 1-58053-992-0 SP - 897 EP - 900 PB - London CY - Horizon House Publ. ER - TY - CHAP A1 - Hilsenbeck, Jochen A1 - Lenk, Friedrich A1 - Heinrich, Wolfgang A1 - Würfl, Joachim T1 - Low phase noise MMIC VCOs for Ka-band applications with improved GaInP/GaAs-HBT technology T2 - Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 2003, 25th Annual Technical Digest 2003, San Diego, California, November 9 - 12, 2003 N2 - We report on the technology and performance of fully monolithic coplanar voltage-controlled oscillators (VCOs) with GaInP/GaAs-HBTs as the active devices. With our optimized HBT process, the parasitic base resistance R/sub B/ and extrinsic base-collector capacitance C/sub EX/ are significantly reduced. In this way, the maximum frequency of oscillation F/sub max/ is increased from 100 to 170 GHz. This allows us to realize fundamental 38 GHz-VCOs with very low phase noise. At an oscillation frequency F/sub res/=34.2/spl plusmn/0.2 GHz, the VCO reaches phase noise levels of -87 dBc/Hz @ 100 kHz and -108 dBc/Hz @ 1 MHz offset frequency, respectively. To our knowledge, these phase noise values are the lowest GaAs data for Ka-band applications reported so far. Y1 - 2003 SN - 0-7803-7833-4 U6 - https://doi.org/10.1109/GAAS.2003.1252399 SP - 223 EP - 226 PB - IEEE Service Center CY - Piscataway, NJ ER - TY - CHAP A1 - Lenk, Friedrich A1 - Schott, Matthias A1 - Heinrich, Wolfgang T1 - Modeling and Measurement of Phase Noise in GaAs HBT Ka-Band Oscillators T2 - 31st European Microwave Conference, 2001, 24 - 26 Sept. 2001 N2 - Accurate oscillator phase-noise simulation is a key problem in MMIC design, which is not solved satisfactory so far and needs further investigation. In this paper, a Ka-band MMIC oscillator with GaInP/GaAs HBT and on-chip resonator is treated as an example. Measured phase noise reaches -90 dBc/Hz and below at 100 kHz offset. To evaluate phase-noise prediction, the circuit is simulated using different commercial simulation tools and HBT models. Considerable differences in simulation results are observed. Y1 - 2001 U6 - https://doi.org/10.1109/EUMA.2001.339168 SP - 1 EP - 4 PB - Microwave Engineering Europe CY - London ER - TY - CHAP A1 - Kuhnert, Holger A1 - Lenk, Friedrich A1 - Hilsenbeck, Jochen A1 - Würfl, Joachim A1 - Heinrich, Wolfgang T1 - Low phase-noise GaInP/GaAs-HBT MMIC oscillators up to 36 GHz T2 - 2001 IEEE MTT-S International Microwave Symposium digest, May 20 - 25, 2001, Phoenix Civic Plaza, Phoenix, AZ, vol. 3 N2 - Monolithic coplanar 18 and 36 GHz oscillators with GaInP/GaAs-HBTs and on-chip resonators are presented. Measured phase-noise reaches -93 dBc/Hz and -91 dBc/Hz at 100 kHz offset for 18 and 36 GHz, respectively. These values demonstrate that GaAs-HBT oscillators yield a phase-noise performance comparable to SiGe-HBTs, with the potential for higher frequencies. Y1 - 2001 SN - 0-7803-6538-0 U6 - https://doi.org/10.1109/MWSYM.2001.967198 SP - 1551 EP - 1554 PB - IEEE Service Center CY - Piscataway, NJ ER -