TY - CHAP A1 - Lenk, Friedrich A1 - Klockenhoff, Harald A1 - Maaßdorf, Andre A1 - Würfl, Joachim A1 - Heinrich, Wolfgang T1 - A 3.2 W coplanar single-device X-band amplifier with GaAs HBT T2 - Gallium Arsenide and Other Semiconductor Application Symposium, 2005, EGAAS 2005 N2 - High-power GaInP/GaAs HBTs with high breakdown voltage for X-band applications are presented. To demonstrate the capabilities of these devices, a simple monolithic amplifier is realized. For a single 12-finger device with 2/spl times/70 /spl mu/m/sup 2/ emitter finger size, an output power of 3.2 W at 9 GHz with 47% PAE is achieved. Y1 - 2005 UR - http://ieeexplore.ieee.org/stamp/stamp.jsp?arnumber=1637147 SN - 88-902012-0-7 SP - 49 EP - 52 PB - Horizon House Publ. CY - London ER - TY - CHAP A1 - Lenk, Friedrich A1 - Schott, Matthias A1 - Hilsenbeck, Jochen A1 - Heinrich, Wolfgang T1 - Low phase-noise GaAs-HBT monolithic W-band oscillator T2 - 34th European Microwave Conference, Tuesday 12th, Wednesday 13th and Thursday 14th October Y1 - 2004 SN - 1-58053-992-0 SP - 897 EP - 900 PB - London CY - Horizon House Publ. ER - TY - CHAP A1 - Hilsenbeck, Jochen A1 - Lenk, Friedrich A1 - Heinrich, Wolfgang A1 - Würfl, Joachim T1 - Low phase noise MMIC VCOs for Ka-band applications with improved GaInP/GaAs-HBT technology T2 - Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 2003, 25th Annual Technical Digest 2003, San Diego, California, November 9 - 12, 2003 N2 - We report on the technology and performance of fully monolithic coplanar voltage-controlled oscillators (VCOs) with GaInP/GaAs-HBTs as the active devices. With our optimized HBT process, the parasitic base resistance R/sub B/ and extrinsic base-collector capacitance C/sub EX/ are significantly reduced. In this way, the maximum frequency of oscillation F/sub max/ is increased from 100 to 170 GHz. This allows us to realize fundamental 38 GHz-VCOs with very low phase noise. At an oscillation frequency F/sub res/=34.2/spl plusmn/0.2 GHz, the VCO reaches phase noise levels of -87 dBc/Hz @ 100 kHz and -108 dBc/Hz @ 1 MHz offset frequency, respectively. To our knowledge, these phase noise values are the lowest GaAs data for Ka-band applications reported so far. Y1 - 2003 SN - 0-7803-7833-4 U6 - https://doi.org/10.1109/GAAS.2003.1252399 SP - 223 EP - 226 PB - IEEE Service Center CY - Piscataway, NJ ER - TY - CHAP A1 - Lenk, Friedrich A1 - Schott, Matthias A1 - Heinrich, Wolfgang T1 - Modeling and Measurement of Phase Noise in GaAs HBT Ka-Band Oscillators T2 - 31st European Microwave Conference, 2001, 24 - 26 Sept. 2001 N2 - Accurate oscillator phase-noise simulation is a key problem in MMIC design, which is not solved satisfactory so far and needs further investigation. In this paper, a Ka-band MMIC oscillator with GaInP/GaAs HBT and on-chip resonator is treated as an example. Measured phase noise reaches -90 dBc/Hz and below at 100 kHz offset. To evaluate phase-noise prediction, the circuit is simulated using different commercial simulation tools and HBT models. Considerable differences in simulation results are observed. Y1 - 2001 U6 - https://doi.org/10.1109/EUMA.2001.339168 SP - 1 EP - 4 PB - Microwave Engineering Europe CY - London ER - TY - CHAP A1 - Kuhnert, Holger A1 - Lenk, Friedrich A1 - Hilsenbeck, Jochen A1 - Würfl, Joachim A1 - Heinrich, Wolfgang T1 - Low phase-noise GaInP/GaAs-HBT MMIC oscillators up to 36 GHz T2 - 2001 IEEE MTT-S International Microwave Symposium digest, May 20 - 25, 2001, Phoenix Civic Plaza, Phoenix, AZ, vol. 3 N2 - Monolithic coplanar 18 and 36 GHz oscillators with GaInP/GaAs-HBTs and on-chip resonators are presented. Measured phase-noise reaches -93 dBc/Hz and -91 dBc/Hz at 100 kHz offset for 18 and 36 GHz, respectively. These values demonstrate that GaAs-HBT oscillators yield a phase-noise performance comparable to SiGe-HBTs, with the potential for higher frequencies. Y1 - 2001 SN - 0-7803-6538-0 U6 - https://doi.org/10.1109/MWSYM.2001.967198 SP - 1551 EP - 1554 PB - IEEE Service Center CY - Piscataway, NJ ER - TY - CHAP A1 - Schott, Matthias A1 - Kuhnert, Holger A1 - Lenk, Friedrich A1 - Hilsenbeck, Jochen A1 - Würfl, Joachim A1 - Heinrich, Wolfgang T1 - 38 GHz push-push GaAs-HBT MMIC oscillator T2 - 2002 IEEE MTT-S International Microwave Symposium digest, June 2 - 7, 2002, Washington State Convention & Trade Center, Seattle, Washington, vol. 2 N2 - Two differential coplanar MMIC HBT oscillators are presented, a fixed frequency and a VCO version. They provide single-ended output at the second harmonic at 38 GHz as well as differential output at 19 GHz. The oscillators show excellent phase noise performance, the fixed-frequency type reaches -95 dBc/Hz at the fundamental frequency and -89 dBc/Hz at the second harmonic, at 100 kHz offset. Y1 - 2002 SN - 0-7803-7239-5 U6 - https://doi.org/10.1109/MWSYM.2002.1011761 SP - 839 EP - 842 PB - IEEE Service Center CY - Piscataway, NJ ER - TY - CHAP A1 - Lenk, Friedrich A1 - Schott, Matthias A1 - Hilsenbeck, Jochen A1 - Würfl, Joachim A1 - Heinrich, Wolfgang T1 - Low phase-noise monolithic GaInP/GaAs-HBT VCO for 77 GHz T2 - 2003 IEEE MTT-S International Microwave Symposium digest, June 8 - 13, 2003, Pennsylvania Convention Center, Philadelphia, Pennsylvania, vol. 2 N2 - Coplanar W-band push-push VCO MMICs using GaInP/GaAs HBTs are presented. One circuit operates at 77 GHz with phase noise of -92 dBc/Hz at 1 MHz offset. To our knowledge this is the first fully monolithic W-band VCO with phase noise better than -90 dBc/Hz. A second version with two varactor diodes yields an almost threefold relative tuning bandwidth. Y1 - 2003 SN - 0-7803-7695-1 U6 - https://doi.org/10.1109/MWSYM.2003.1212515 SP - 903 EP - 906 PB - IEEE Service Center CY - Piscataway, NJ ER - TY - CHAP A1 - Lenk, Friedrich A1 - Schott, Matthias A1 - Hilsenbeck, Jochen A1 - Heinrich, Wolfgang T1 - Optimizing MMIC reflection-type oscillators T2 - 2004 IEEE MTT-S International Microwave Symposium digest, June 6 - 11, 2004, Fort Worth Convention Center, Fort Worth, Texas, vol. 3 N2 - In this paper, optimization of the loaded quality factor QL for reflection-type HBT oscillator is investigated. Main result is an optimum relation between the S parameter phases at the three transistor ports. To support this finding, a 35.5 GHz MMIC VCO phase noise better than -85 dBc/Hz at 100 kHz offset frequency is demonstrated. Y1 - 2004 SN - 0-7803-8331-1 U6 - https://doi.org/10.1109/MWSYM.2004.1338816 SP - 1341 EP - 1344 PB - IEEE Service Center CY - Piscataway, NJ ER - TY - CHAP A1 - Schmückle, Franz-Josef A1 - Lenk, Friedrich A1 - Hutter, Matthias A1 - Klein, Matthias A1 - Oppermann, Hermann A1 - Engelmann, Gunter A1 - Töpper, Michael A1 - Riepe, Klaus J. A1 - Heinrich, Wolfgang T1 - W-band flip-chip VCO in thin-film environment T2 - 2005 IEEE MTT-S International Microwave Symposium, June 12 - 17, 2005, Long Beach, CA N2 - A flip-chip packaging approach for W-band GaAs chips is presented using thin-film structures on silicon as carrier substrate. Reliability investigations indicate that, depending on bump size, the CTE mismatch is not critical and an underfiller does not provide distinctive benefits. A 77 GHz VCO GaAs-HBT MMIC is flip-chip-mounted to demonstrate validity of the packaging scheme. Y1 - 2005 SN - 0-7803-8845-3 U6 - https://doi.org/10.1109/MWSYM.2005.1516837 PB - IEEE Operations Center CY - Piscataway, NJ ER - TY - CHAP A1 - Schott, Matthias A1 - Lenk, Friedrich A1 - Meliani, Chafik A1 - Heinrich, Wolfgang T1 - Low phase noise X-band push-push oscillator with frequency divider T2 - 2005 IEEE MTT-S International Microwave Symposium, June 12 - 17, 2005, Long Beach, CA N2 - A MMIC Colpitts oscillator in push-push configuration with integrated frequency divider using InGaP/GaAs HBTs is presented. The output is taken from the second harmonic port while the fundamental signal is fed to a frequency divider by two thus providing a reference signal at one quarter of the output frequency. The MMIC VCO reaches state-of-the-art phase-noise performance in X-band down to -120dBc/Hz at 1MHz offset frequency at high output power and a tuning range of 4%. Y1 - 2005 SN - 0-7803-8845-3 U6 - https://doi.org/10.1109/MWSYM.2005.1516986 PB - IEEE Operations Center CY - Piscataway, NJ ER - TY - CHAP A1 - Meliani, Chafik A1 - Lenk, Friedrich A1 - Heinrich, Wolfgang T1 - 24 GHz Low Power VCOs and Analog Frequency Dividers T2 - IEEE MTT-S International Microwave Symposium digest, 11 - 16 June 2006, San Francisco, CA N2 - 24 GHz VCOs and frequency dividers with very low power consumption are presented. The circuits are realized as GaAs HBT MMICs. They comprise a VCO with high efficiency >17% and 12% tuning range at only 18 mW DC consumption as well as several frequency dividers. In order to minimize power consumption, the latter use the injection-locked frequency-divider (ILFD) concept. Divider ratios of 2 and 4 are realized, power consumption as low as 25 mW for a divider-by-2 is achieved. This demonstrates the capabilities of the analog concept in realizing dividers for mm-wave frequencies at DC consumption levels far below their digital counterparts Y1 - 2006 SN - 0-7803-9541-7 U6 - https://doi.org/10.1109/MWSYM.2006.249744 SP - 1801 EP - 1804 PB - IEEE Operations Center CY - Piscataway, NJ ER - TY - GEN A1 - Lenk, Friedrich A1 - Schott, Matthias A1 - Hilsenbeck, Jochen A1 - Heinrich, Wolfgang T1 - A new design approach for low phase-noise reflection-type MMIC oscillators T2 - IEEE transactions on microwave theory and techniques N2 - In this paper, optimization of the loaded quality factor QL for reflection-type heterojunction bipolar transistor (HBT) oscillators is investigated. The main result is an optimum relation between the S-parameter phases at the three transistor ports. A new design strategy for this type of oscillator is proposed. The analysis is verified by comparing several Ka-band monolithic-microwave integrated-circuit oscillators in GaAs HBT technology with different resonators. The measured loaded QL values correspond to the measured phase noise of the circuits. At an oscillation frequency of 33 GHz, an excellent phase noise of -87 dBc/Hz at 100-kHz offset frequency is achieved over the whole tuning range. Y1 - 2004 U6 - https://doi.org/10.1109/TMTT.2004.837319 SN - 0018-9480 VL - 52 IS - 12 SP - 2725 EP - 2731 ER - TY - GEN A1 - Johansen, Tom K. A1 - Rudolph, Matthias A1 - Jensen, Thomas A1 - Kraemer, Tomas A1 - Weimann, Nils A1 - Schnieder, Frank A1 - Krozer, Viktor A1 - Heinrich, Wolfgang T1 - Modeling of InP HBTs in Transferred-Substrate Technology for Millimeter-Wave Applications T2 - Microwave Integrated Circuits Conference (EuMIC), 2013, 8th European, 6–8 October 2013 Nuremberg, Germany Y1 - 2013 SN - 978-2-87487-032-3 SP - 280 EP - 283 PB - IEEE CY - Piscataway, NJ ER - TY - GEN A1 - Schnieder, Frank A1 - Bengtsson, Olof A1 - Schmückle, Franz-Josef A1 - Rudolph, Matthias A1 - Heinrich, Wolfgang T1 - Simulation of RF Power Distribution in a Packaged GaN Power Transistor Using an Electro-Thermal Large-Signal Description T2 - IEEE transactions on microwave theory and techniques Y1 - 2013 U6 - https://doi.org/10.1109/TMTT.2013.2261089 SN - 0018-9480 VL - 61 IS - 7 SP - 2603 EP - 2609 ER - TY - GEN A1 - Johansen, Tom K. A1 - Rudolph, Matthias A1 - Jensen, Thomas A1 - Kraemer, Tomas A1 - Weimann, Nils A1 - Schnieder, Frank A1 - Krozer, Viktor A1 - Heinrich, Wolfgang T1 - Small- and large-signal modeling of InP HBTs in transferred-substrate technology T2 - International Journal of Microwave and Wireless Technologies Y1 - 2014 U6 - https://doi.org/10.1017/S1759078714000051 VL - 6 IS - 3-4 SP - 243 EP - 251 ER - TY - CHAP A1 - Andrei, Cristina A1 - Bengtsson, Olof A1 - Dörner, Ralf A1 - Chevtchenko, Serguei A. A1 - Heinrich, Wolfgang A1 - Rudolph, Matthias T1 - Dynamic behaviour of a Low-Noise Amplifier GaN MMIC under input power overdrive T2 - Proceedings of 45th European Microwave Conference, Paris 2015 Y1 - 2015 U6 - https://doi.org/10.1109/EuMC.2015.7345742 SP - 231 EP - 234 PB - IEEE ER - TY - GEN A1 - Nosaeva, Ksenia A1 - Weimann, Nils A1 - Rudolph, Matthias A1 - John, Wilfred A1 - Krüger, Olaf A1 - Heinrich, Wolfgang T1 - Improved thermal management of InP transistors in transferred-substrate technology with diamond heat-spreading layer T2 - Electronics Letters Y1 - 2015 U6 - https://doi.org/10.1049/el.2015.1135 SN - 1350-911X VL - 51 IS - 13 SP - 1010 EP - 1012 ER - TY - GEN A1 - Nosaeva, Ksenia A1 - Weimann, Nils A1 - Rudolph, Matthias A1 - John, Wilfred A1 - Krüger, Olaf A1 - Heinrich, Wolfgang T1 - Thin ice: Diamond films could more than double the power output achievable with transistors in the ‘Terahertz gap’ by improving thermal management T2 - Electronics Letters Y1 - 2015 U6 - https://doi.org/10.1049/el.2015.1943 SN - 1350-911X VL - 51 IS - 13 SP - S. 959 ER - TY - GEN A1 - Nosaeva, Ksenia A1 - Al-Sawaf, Thualfiqa A1 - John, Wilfred A1 - Stoppel, Dimitri A1 - Rudolph, Matthias A1 - Schmückle, Franz-Josef A1 - Janke, Bernd A1 - Krüger, Olaf A1 - Krozer, Viktor A1 - Heinrich, Wolfgang A1 - Weimann, Nils T1 - Multifinger Indium Phosphide Double-Heterostructure Transistor Circuit Technology With Integrated Diamond Heat Sink Layer T2 - IEEE Transactions on Electron Devices Y1 - 2016 U6 - https://doi.org/10.1109/TED.2016.2533669 SN - 0018-9383 SN - 1557-9646 VL - 63 IS - 5 SP - 1846 EP - 1852 ER - TY - CHAP A1 - Rudolph, Matthias A1 - Andrei, Cristina A1 - Dörner, Ralf A1 - Chevtchenko, Serguei A. A1 - Heinrich, Wolfgang T1 - Noise in GaN HEMTs and Circuits T2 - 24th International Conference on Noise and Fluctuations (ICNF), Vilnius, Lithuania, June 20-23, 2017 Y1 - 2017 SN - 978-1-5090-2760-6 U6 - https://doi.org/10.1109/ICNF.2017.7985978 SP - 1 EP - 4 PB - IEEE CY - Piscataway, NJ ER - TY - CHAP A1 - Andrei, Cristina A1 - Dörner, Ralf A1 - Chevtchenko, Serguei A. A1 - Heinrich, Wolfgang A1 - Rudolph, Matthias T1 - On the Optimization of GaN HEMT Layout for Highly Rugged Low-Noise Amplifier Design T2 - 12th European Microwave Integrated Circuits Conference (EuMIC), 8-10 Oct. 2017, Nuremberg, Germany Y1 - 2017 SN - 978-2-87487-048-4 U6 - https://doi.org/10.23919/EuMIC.2017.8230705 SP - 244 EP - 247 PB - IEEE CY - Piscataway, NJ ER - TY - CHAP A1 - Luo, Peng A1 - Schnieder, Frank A1 - Bengtsson, Olof A1 - Heinrich, Wolfgang A1 - Rudolph, Matthias T1 - Modeling the Virtual Gate Voltage in Dispersive GaN HEMTs T2 - IEEE/MTT-S International Microwave Symposium, 10-15 June 2018, Philadelphia, PA, USA Y1 - 2018 SN - 978-1-5386-5067-7 U6 - https://doi.org/10.1109/MWSYM.2018.8439389 SP - 728 EP - 731 PB - IEEE CY - Piscataway, NJ ER - TY - GEN A1 - Shivan, T. A1 - Kaule, Evelyne A1 - Hossain, M. A1 - Dörner, Ralf A1 - Johansen, Tom K. A1 - Stoppel, Dimitri A1 - Boppel, S. A1 - Heinrich, Wolfgang A1 - Krozer, Viktor A1 - Rudolph, Matthias T1 - Design and modeling of a ultra-wideband low-noise distributend amplifier in InP DHBT technology T2 - International Journal of Microwave and Wireless Technologies Y1 - 2019 U6 - https://doi.org/10.1017/S1759078719000515 SN - 1759-0795 N1 - MIKON 2018 / EuMW 2018 (Part II) VL - 11 IS - 7 SP - 635 EP - 644 ER - TY - GEN A1 - Luo, Peng A1 - Schnieder, Frank A1 - Bengtsson, Olof A1 - Vadalà, Valeria A1 - Raffo, Antonio A1 - Heinrich, Wolfgang A1 - Rudolph, Matthias T1 - A streamlined drain-lag model for GaN HEMTs based on pulsed S-parameter measurements T2 - International Journal of Microwave and Wireless Technologies Y1 - 2019 U6 - https://doi.org/10.1017/S1759078719000060 SN - 1759-0787 SN - 1759-0795 VL - 11 IS - 2 SP - 121 EP - 129 ER - TY - GEN A1 - Erkelenz, Kevin A1 - Sriperumbuduri, Venkata Pawan A1 - Flisgen, Thomas A1 - Rudolph, Matthias A1 - Johansen, Tom K. A1 - Heinrich, Wolfgang A1 - Wentzel, Andreas T1 - Output Matching Network Design for Highly Efficient InP-DHBT W-Band PAs Utilizing a Defected Ground Structure T2 - 2020 German Microwave Conference (GeMiC), 09-11 March 2020, Cottbus, Germany Y1 - 2020 UR - https://ieeexplore.ieee.org/document/9080208 SN - 978-3-9820-3971-8 SN - 978-1-7281-4206-7 N1 - INSPEC Accession Number: 19575344 SP - 268 EP - 271 PB - IEEE ER - TY - GEN A1 - Krause, Sascha A1 - Beleniotis, Petros A1 - Bengtsson, Olof A1 - Rudolph, Matthias A1 - Heinrich, Wolfgang T1 - Characterization of the Impairment and Recovery of GaN-HEMTs in Low-Noise Amplifiers under Input Overdrive T2 - 2021 IEEE MTT-S International Microwave Symposium (IMS), 07-25 June 2021, Atlanta, GA, USA Y1 - 2021 SN - 978-1-6654-0307-8 SN - 978-1-6654-3141-5 U6 - https://doi.org/10.1109/IMS19712.2021.9574839 SN - 2576-7216 SN - 0149-645X SP - 515 EP - 518 ER - TY - GEN A1 - Krause, Sascha A1 - Michler, Fabian A1 - Kölpin, Alexander A1 - Rudolph, Matthias A1 - Heinrich, Wolfgang T1 - A Digital Correction Method for Increased Dynamic Range in Interferometric Six-Port Radars T2 - IEEE Microwave and Wireless Components Letters Y1 - 2021 U6 - https://doi.org/10.1109/LMWC.2021.3084338 SN - 1558-1764 SN - 1531-1309 VL - 31 IS - 8 SP - 997 EP - 1000 ER - TY - GEN A1 - Shrestha, Amit A1 - Dörner, Ralf A1 - Yacoub, Hady A1 - Johansen, Tom K. A1 - Heinrich, Wolfgang A1 - Krozer, Viktor A1 - Rudolph, Matthias A1 - Wentzel, Andreas T1 - A 100 GHz Class-F-Like InP-DHBT PA with 25,4%PAE T2 - 16th European Microwave Integrated Circuits Conference (EuMIC), 03-04 April 2022, London, United Kingdom Y1 - 2022 SN - 978-2-87487-064-4 SN - 978-1-6654-4722-5 U6 - https://doi.org/10.23919/EuMIC50153.2022.9783638 SP - 225 EP - 228 ER - TY - GEN A1 - Krause, Sascha A1 - Zervos, Christos A1 - Beleniotis, Petros A1 - Ritter, Dan A1 - Rudolph, Matthias A1 - Heinrich, Wolfgang T1 - On the Influence of Transistor Dimensions on the Dispersive Behavior in A1GaN/GaN HEMT-Based PAs and Robust LNAs T2 - IEEE/MTT-S International Microwave Symposium - IMS 2022, 19-24 June 2022 Denver, CO, USA Y1 - 2022 SN - 978-1-6654-9613-1 SN - 978-1-6654-9614-8 U6 - https://doi.org/10.1109/IMS37962.2022.9865474 SP - 914 EP - 917 PB - IEEE CY - Piscataway ER - TY - GEN A1 - Yazdani, Hossein A1 - Beleniotis, Petros A1 - Brunner, Frank A1 - Ostermay, Ina A1 - Würfl, Joachim A1 - Rudolph, Matthias A1 - Heinrich, Wolfgang A1 - Hilt, Oliver T1 - K/Ka-Band-GaN-High-Electron-Mobility Transistors Technology with 700 mS mm-1 Extrinsic Transconductance T2 - Physica Status Solidi Y1 - 2024 U6 - https://doi.org/10.1002/pssa.202400592 ER - TY - GEN A1 - Tiwari, Krishan Kumar A1 - Flisgen, Thomas A1 - Heinrich, Wolfgang A1 - Caire, Giuseppe T1 - Array-fed RIS : validation of Friis-based modeling using full-wave simulations T2 - Proceedings of the 2025 16th German Microwave Conference (GeMiC), March 17-19, 2025, Dresden, Germany N2 - Space-fed large antenna arrays offer superior efficiency, simplicity, and reductions in size, weight, power, and cost (SWaP-C) compared to constrained-feed systems. Historically, horn antennas have been used for space feeding, but they suffer from limitations such as bulky designs, low aperture efficiency (≈ 50%), and restricted degrees of freedom at the continuous aperture. In contrast, planar patch arrays achieve significantly higher aperture efficiency (> 90%) due to their more uniform aperture distribution, reduced weight, and increased degrees of freedom from the discretized aperture. Building on these advantages, we proposed an array-fed Reflective Intelligent Surface (RIS) system, where an active multi-antenna feeder (AMAF) optimizes power transfer by aligning with the principal eigenmode of the AMAF-RIS propagation matrix T. While our previous studies relied on the Friis transmission formula for system modeling, we now validate this approach through full-wave simulations in CST Microwave Studio®. By comparing the Friis-based matrix, TFriis, with the full-wave solution, Tfull.wave, we validate the relevance of the Friis-based modeling for top-level system design. Our findings confirm the feasibility of the proposed AMAF-RIS architecture for next generation communication systems. Y1 - 2025 SN - 978-3-9820397-4-9 U6 - https://doi.org/10.23919/GeMiC64734.2025.10979163 SP - 611 EP - 614 PB - Institute of Electrical and Electronics Engineers (IEEE) CY - New York, NY ER - TY - GEN A1 - Dischke, Eugen A1 - Nozinic, Sonja A1 - Hellmich, Daniel Georg A1 - Flisgen, Thomas A1 - Rämer, Adam A1 - Heinrich, Wolfgang A1 - Krozer, Viktor T1 - Band-pass filter based on stacked metal plates in V-band waveguide technology T2 - Proceedings of the 2025 IEEE/MTT-S International Microwave Symposium (IMS), 15-20 June 2025, San Francisco, CA, USA N2 - Waveguide filters ideally require resonance chambers, whose shape is defined by sharp corners. As this is difficult to obtain by classical means of production, a cost-effective rectangular band-pass filter (BPF) based on multilayer waveguide (MLW) technology for V-band is proposed in this paper. The conveniently compact design of the filter is then supplied into a streamlined and automated procedure to transfer the design into production data. This in turn eliminates man made errors in production and leaves room for scalability. Y1 - 2025 SN - 979-8-3315-1409-9 SN - 979-8-3315-1410-5 U6 - https://doi.org/10.1109/IMS40360.2025.11103935 SN - 2576-7216 SN - 0149-645X SP - 427 EP - 430 PB - Institute of Electrical and Electronics Engineers (IEEE) CY - New York, NY ER - TY - GEN A1 - Heinken, Thilo A1 - Blumröder, Jeanette S. A1 - Adhikari, Yojana A1 - Balthasar, Cathrina A1 - Binder, Anja A1 - Birkhofer, Klaus A1 - Bischoff, Antje A1 - Brosinsky, Arlena A1 - Bubner, Ben A1 - Clerc, Danica A1 - Djoudi, El Aziz A1 - Dobkowitz, Sophia A1 - Francke, Till A1 - Gerwin, Werner A1 - Hartong, Heinrich A1 - Hess, Carsten A1 - Jarling, René A1 - Jouy, Florent A1 - Leinen, Loretta A1 - Meißner, Andreas A1 - Raab, Thomas A1 - Repmann, Frank A1 - Rönnefarth, Susanne A1 - Schaaf, Wolfgang A1 - Schirrmacher, Marina A1 - Schmehl, Marie-Therese A1 - Schmitt, Thomas A1 - Schröder, Jens A1 - Schüle, Maren A1 - Sturm, Knut A1 - Welle, Torsten A1 - Ibisch, Pierre L. T1 - PYROPHOB – A post-fire ecosystem research project to inform management for resilient forest development BT - PYROPHOB – Ein Ökosystemforschungsprojekt auf Waldbrandflächen als Grundlage für das Management einer resilienten Waldentwicklung T2 - Tuexenia N2 - PYROPHOB (fire-resistant) is the name of an interdisciplinary research project that is running for five years from 2020 to 2025. In this project, eight institutions are investigating the ecological effects of wildfires and subsequent forest management strategies in pine forests (plantations) in Brandenburg (NE Germany), with the aim of formulating practical recommendations for managing fire-prone forests and the effective restoration of post-fire forest areas. We provide a brief overview of what is known about the effects of wildfire on abiotic and biotic parameters in temperate pine forests, as well as the effects of silvicultural treatments. To date, we know little about how different components of biodiversity are linked in post-fire forest ecosystems and how management affects their functioning. By describing the project, we illustrate the requirements for the implementation of such an applied research project. We emphasize the importance of the study design for dealing with interdisciplinary questions and for the quantitative synthesis of research results. The project comprises a set of standardised field plots in two wildfire areas covering different post-fire management options. Fifteen study sites were established, including two reference sites in unburned pine stands, each with ten study plots as replicates. In situ nitrogen mineralisation, litter decomposition tests and soil biological activity are used for soil biological characterisation. Microclimate data is measured continuously. Standing and lying dead wood and tree regeneration are recorded as key indicators of the success of forestry treatments. Further methods com-prise terrestrial laser scanning, remote sensing techniques as well as surveys of vegetation and above and below ground biomass. Identification of fruiting body-forming fungi, phytoparasites and ectomycorrhizal fungi is supported by marker gene sequencing. Faunistic indicators comprise predatory soil arthropods (pairs of emergence tents and soil traps), saproxylic beetles (flight traps and funnel traps), moths (automated window traps), mammals (camera traps), and breeding birds (visual and acoustic observation). We discuss the strengths and limitations of the project design. We are able to systematically capture short-term temporal shifts in parameters and trends in post-fire ecosystem development. Research in a real landscape with ongoing environmental changes and interventions pres-ents challenges for experimental design, data analysis and interpretation. The drivers of ecosystem development are rarely completely independent or perfectly balanced, and lack of replication is ine-vitable. The two fires did not occur in the same year and season, resulting in different initial conditions for the colonisation of the burned areas. Finally, a large part of one study area was again affected by a fire in 2022, which destroyed direct comparability with the other sites. Despite these obstacles the project has started to generate valuable results to address management and conservation challenges. Y1 - 2024 U6 - https://doi.org/10.14471/2024.44.004 SN - 0722-494X SN - 2748-3452 VL - 44 ER - TY - GEN A1 - Kanitkar, Abhijeet Kanitkar A1 - Doerner, Ralf Doerner A1 - Johansen, Tom Keinicke A1 - Heinrich, Wolfgang A1 - Flisgen, Thomas T1 - On-wafer 16-term calibration for characterization of InP HBTs featuring sub-THz fmax T2 - 2025 55 th European Microwave Conference Proceedings N2 - In this paper, InP HBTs featuring maximum oscillation frequencies fmax in the sub-THz range are characterized by conducting on-wafer 16 -term calibration. A direct comparison between 8 -term calibration and 16 -term calibration demonstrates that the 16 -term calibration improves the way transistor Mason's gain is derived. The on-wafer measurements of transistors with emitter widths of 0.5μm and 0.85μm yield extracted fmax values of 0.44 THz and 0.33 THz, respectively. The study shows that choosing proper on-wafer calibration techniques is highly important for reliable transistor characterization. KW - InP HBTs KW - On-wafer measurements KW - Transistor characterization KW - 8-term calibration KW - 16-term calibration Y1 - 2025 SN - 978-2-87487-081-1 SN - 979-8-3315-1260-6 U6 - https://doi.org/10.23919/EuMC65286.2025.11235132 SP - 687 EP - 690 PB - IEEE CY - Piscataway, NJ ER -