TY - CHAP A1 - Andrei, Cristina A1 - Dörner, Ralf A1 - Bengtsson, Olof A1 - Chevtchenko, Serguei A. A1 - Heinrich, Wolfgang A1 - Rudolph, Matthias T1 - Highly Linear X-Band GaN-Based Low-Noise Amplifier T2 - Signals, Systems, and Electronics (ISSSE), 2012 International Symposium on , Potsdam Y1 - 2012 UR - http://ieeexplore.ieee.org/xpl/mostRecentIssue.jsp?punumber=6362332 SN - 978-1-4673-4454-8 SN - 978-1-4673-4453-1 PB - IEEE CY - Piscataway, NJ ER - TY - CHAP A1 - Lenk, Friedrich A1 - Klockenhoff, Harald A1 - Maaßdorf, Andre A1 - Würfl, Joachim A1 - Heinrich, Wolfgang T1 - A 3.2 W coplanar single-device X-band amplifier with GaAs HBT T2 - Gallium Arsenide and Other Semiconductor Application Symposium, 2005, EGAAS 2005 N2 - High-power GaInP/GaAs HBTs with high breakdown voltage for X-band applications are presented. To demonstrate the capabilities of these devices, a simple monolithic amplifier is realized. For a single 12-finger device with 2/spl times/70 /spl mu/m/sup 2/ emitter finger size, an output power of 3.2 W at 9 GHz with 47% PAE is achieved. Y1 - 2005 UR - http://ieeexplore.ieee.org/stamp/stamp.jsp?arnumber=1637147 SN - 88-902012-0-7 SP - 49 EP - 52 PB - Horizon House Publ. CY - London ER - TY - CHAP A1 - Lenk, Friedrich A1 - Schott, Matthias A1 - Hilsenbeck, Jochen A1 - Heinrich, Wolfgang T1 - Low phase-noise GaAs-HBT monolithic W-band oscillator T2 - 34th European Microwave Conference, Tuesday 12th, Wednesday 13th and Thursday 14th October Y1 - 2004 SN - 1-58053-992-0 SP - 897 EP - 900 PB - London CY - Horizon House Publ. ER - TY - CHAP A1 - Hilsenbeck, Jochen A1 - Lenk, Friedrich A1 - Heinrich, Wolfgang A1 - Würfl, Joachim T1 - Low phase noise MMIC VCOs for Ka-band applications with improved GaInP/GaAs-HBT technology T2 - Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 2003, 25th Annual Technical Digest 2003, San Diego, California, November 9 - 12, 2003 N2 - We report on the technology and performance of fully monolithic coplanar voltage-controlled oscillators (VCOs) with GaInP/GaAs-HBTs as the active devices. With our optimized HBT process, the parasitic base resistance R/sub B/ and extrinsic base-collector capacitance C/sub EX/ are significantly reduced. In this way, the maximum frequency of oscillation F/sub max/ is increased from 100 to 170 GHz. This allows us to realize fundamental 38 GHz-VCOs with very low phase noise. At an oscillation frequency F/sub res/=34.2/spl plusmn/0.2 GHz, the VCO reaches phase noise levels of -87 dBc/Hz @ 100 kHz and -108 dBc/Hz @ 1 MHz offset frequency, respectively. To our knowledge, these phase noise values are the lowest GaAs data for Ka-band applications reported so far. Y1 - 2003 SN - 0-7803-7833-4 U6 - https://doi.org/10.1109/GAAS.2003.1252399 SP - 223 EP - 226 PB - IEEE Service Center CY - Piscataway, NJ ER - TY - CHAP A1 - Lenk, Friedrich A1 - Schott, Matthias A1 - Heinrich, Wolfgang T1 - Modeling and Measurement of Phase Noise in GaAs HBT Ka-Band Oscillators T2 - 31st European Microwave Conference, 2001, 24 - 26 Sept. 2001 N2 - Accurate oscillator phase-noise simulation is a key problem in MMIC design, which is not solved satisfactory so far and needs further investigation. In this paper, a Ka-band MMIC oscillator with GaInP/GaAs HBT and on-chip resonator is treated as an example. Measured phase noise reaches -90 dBc/Hz and below at 100 kHz offset. To evaluate phase-noise prediction, the circuit is simulated using different commercial simulation tools and HBT models. Considerable differences in simulation results are observed. Y1 - 2001 U6 - https://doi.org/10.1109/EUMA.2001.339168 SP - 1 EP - 4 PB - Microwave Engineering Europe CY - London ER - TY - CHAP A1 - Kuhnert, Holger A1 - Lenk, Friedrich A1 - Hilsenbeck, Jochen A1 - Würfl, Joachim A1 - Heinrich, Wolfgang T1 - Low phase-noise GaInP/GaAs-HBT MMIC oscillators up to 36 GHz T2 - 2001 IEEE MTT-S International Microwave Symposium digest, May 20 - 25, 2001, Phoenix Civic Plaza, Phoenix, AZ, vol. 3 N2 - Monolithic coplanar 18 and 36 GHz oscillators with GaInP/GaAs-HBTs and on-chip resonators are presented. Measured phase-noise reaches -93 dBc/Hz and -91 dBc/Hz at 100 kHz offset for 18 and 36 GHz, respectively. These values demonstrate that GaAs-HBT oscillators yield a phase-noise performance comparable to SiGe-HBTs, with the potential for higher frequencies. Y1 - 2001 SN - 0-7803-6538-0 U6 - https://doi.org/10.1109/MWSYM.2001.967198 SP - 1551 EP - 1554 PB - IEEE Service Center CY - Piscataway, NJ ER - TY - CHAP A1 - Schott, Matthias A1 - Kuhnert, Holger A1 - Lenk, Friedrich A1 - Hilsenbeck, Jochen A1 - Würfl, Joachim A1 - Heinrich, Wolfgang T1 - 38 GHz push-push GaAs-HBT MMIC oscillator T2 - 2002 IEEE MTT-S International Microwave Symposium digest, June 2 - 7, 2002, Washington State Convention & Trade Center, Seattle, Washington, vol. 2 N2 - Two differential coplanar MMIC HBT oscillators are presented, a fixed frequency and a VCO version. They provide single-ended output at the second harmonic at 38 GHz as well as differential output at 19 GHz. The oscillators show excellent phase noise performance, the fixed-frequency type reaches -95 dBc/Hz at the fundamental frequency and -89 dBc/Hz at the second harmonic, at 100 kHz offset. Y1 - 2002 SN - 0-7803-7239-5 U6 - https://doi.org/10.1109/MWSYM.2002.1011761 SP - 839 EP - 842 PB - IEEE Service Center CY - Piscataway, NJ ER - TY - CHAP A1 - Lenk, Friedrich A1 - Schott, Matthias A1 - Hilsenbeck, Jochen A1 - Würfl, Joachim A1 - Heinrich, Wolfgang T1 - Low phase-noise monolithic GaInP/GaAs-HBT VCO for 77 GHz T2 - 2003 IEEE MTT-S International Microwave Symposium digest, June 8 - 13, 2003, Pennsylvania Convention Center, Philadelphia, Pennsylvania, vol. 2 N2 - Coplanar W-band push-push VCO MMICs using GaInP/GaAs HBTs are presented. One circuit operates at 77 GHz with phase noise of -92 dBc/Hz at 1 MHz offset. To our knowledge this is the first fully monolithic W-band VCO with phase noise better than -90 dBc/Hz. A second version with two varactor diodes yields an almost threefold relative tuning bandwidth. Y1 - 2003 SN - 0-7803-7695-1 U6 - https://doi.org/10.1109/MWSYM.2003.1212515 SP - 903 EP - 906 PB - IEEE Service Center CY - Piscataway, NJ ER - TY - CHAP A1 - Lenk, Friedrich A1 - Schott, Matthias A1 - Hilsenbeck, Jochen A1 - Heinrich, Wolfgang T1 - Optimizing MMIC reflection-type oscillators T2 - 2004 IEEE MTT-S International Microwave Symposium digest, June 6 - 11, 2004, Fort Worth Convention Center, Fort Worth, Texas, vol. 3 N2 - In this paper, optimization of the loaded quality factor QL for reflection-type HBT oscillator is investigated. Main result is an optimum relation between the S parameter phases at the three transistor ports. To support this finding, a 35.5 GHz MMIC VCO phase noise better than -85 dBc/Hz at 100 kHz offset frequency is demonstrated. Y1 - 2004 SN - 0-7803-8331-1 U6 - https://doi.org/10.1109/MWSYM.2004.1338816 SP - 1341 EP - 1344 PB - IEEE Service Center CY - Piscataway, NJ ER - TY - CHAP A1 - Schmückle, Franz-Josef A1 - Lenk, Friedrich A1 - Hutter, Matthias A1 - Klein, Matthias A1 - Oppermann, Hermann A1 - Engelmann, Gunter A1 - Töpper, Michael A1 - Riepe, Klaus J. A1 - Heinrich, Wolfgang T1 - W-band flip-chip VCO in thin-film environment T2 - 2005 IEEE MTT-S International Microwave Symposium, June 12 - 17, 2005, Long Beach, CA N2 - A flip-chip packaging approach for W-band GaAs chips is presented using thin-film structures on silicon as carrier substrate. Reliability investigations indicate that, depending on bump size, the CTE mismatch is not critical and an underfiller does not provide distinctive benefits. A 77 GHz VCO GaAs-HBT MMIC is flip-chip-mounted to demonstrate validity of the packaging scheme. Y1 - 2005 SN - 0-7803-8845-3 U6 - https://doi.org/10.1109/MWSYM.2005.1516837 PB - IEEE Operations Center CY - Piscataway, NJ ER - TY - CHAP A1 - Schott, Matthias A1 - Lenk, Friedrich A1 - Meliani, Chafik A1 - Heinrich, Wolfgang T1 - Low phase noise X-band push-push oscillator with frequency divider T2 - 2005 IEEE MTT-S International Microwave Symposium, June 12 - 17, 2005, Long Beach, CA N2 - A MMIC Colpitts oscillator in push-push configuration with integrated frequency divider using InGaP/GaAs HBTs is presented. The output is taken from the second harmonic port while the fundamental signal is fed to a frequency divider by two thus providing a reference signal at one quarter of the output frequency. The MMIC VCO reaches state-of-the-art phase-noise performance in X-band down to -120dBc/Hz at 1MHz offset frequency at high output power and a tuning range of 4%. Y1 - 2005 SN - 0-7803-8845-3 U6 - https://doi.org/10.1109/MWSYM.2005.1516986 PB - IEEE Operations Center CY - Piscataway, NJ ER - TY - CHAP A1 - Meliani, Chafik A1 - Lenk, Friedrich A1 - Heinrich, Wolfgang T1 - 24 GHz Low Power VCOs and Analog Frequency Dividers T2 - IEEE MTT-S International Microwave Symposium digest, 11 - 16 June 2006, San Francisco, CA N2 - 24 GHz VCOs and frequency dividers with very low power consumption are presented. The circuits are realized as GaAs HBT MMICs. They comprise a VCO with high efficiency >17% and 12% tuning range at only 18 mW DC consumption as well as several frequency dividers. In order to minimize power consumption, the latter use the injection-locked frequency-divider (ILFD) concept. Divider ratios of 2 and 4 are realized, power consumption as low as 25 mW for a divider-by-2 is achieved. This demonstrates the capabilities of the analog concept in realizing dividers for mm-wave frequencies at DC consumption levels far below their digital counterparts Y1 - 2006 SN - 0-7803-9541-7 U6 - https://doi.org/10.1109/MWSYM.2006.249744 SP - 1801 EP - 1804 PB - IEEE Operations Center CY - Piscataway, NJ ER - TY - CHAP A1 - Andrei, Cristina A1 - Bengtsson, Olof A1 - Dörner, Ralf A1 - Chevtchenko, Serguei A. A1 - Heinrich, Wolfgang A1 - Rudolph, Matthias T1 - Dynamic behaviour of a Low-Noise Amplifier GaN MMIC under input power overdrive T2 - Proceedings of 45th European Microwave Conference, Paris 2015 Y1 - 2015 U6 - https://doi.org/10.1109/EuMC.2015.7345742 SP - 231 EP - 234 PB - IEEE ER - TY - CHAP A1 - Rudolph, Matthias A1 - Andrei, Cristina A1 - Dörner, Ralf A1 - Chevtchenko, Serguei A. A1 - Heinrich, Wolfgang T1 - Noise in GaN HEMTs and Circuits T2 - 24th International Conference on Noise and Fluctuations (ICNF), Vilnius, Lithuania, June 20-23, 2017 Y1 - 2017 SN - 978-1-5090-2760-6 U6 - https://doi.org/10.1109/ICNF.2017.7985978 SP - 1 EP - 4 PB - IEEE CY - Piscataway, NJ ER - TY - CHAP A1 - Andrei, Cristina A1 - Dörner, Ralf A1 - Chevtchenko, Serguei A. A1 - Heinrich, Wolfgang A1 - Rudolph, Matthias T1 - On the Optimization of GaN HEMT Layout for Highly Rugged Low-Noise Amplifier Design T2 - 12th European Microwave Integrated Circuits Conference (EuMIC), 8-10 Oct. 2017, Nuremberg, Germany Y1 - 2017 SN - 978-2-87487-048-4 U6 - https://doi.org/10.23919/EuMIC.2017.8230705 SP - 244 EP - 247 PB - IEEE CY - Piscataway, NJ ER - TY - CHAP A1 - Luo, Peng A1 - Schnieder, Frank A1 - Bengtsson, Olof A1 - Heinrich, Wolfgang A1 - Rudolph, Matthias T1 - Modeling the Virtual Gate Voltage in Dispersive GaN HEMTs T2 - IEEE/MTT-S International Microwave Symposium, 10-15 June 2018, Philadelphia, PA, USA Y1 - 2018 SN - 978-1-5386-5067-7 U6 - https://doi.org/10.1109/MWSYM.2018.8439389 SP - 728 EP - 731 PB - IEEE CY - Piscataway, NJ ER -