TY - CHAP
A1 - Rudolph, Matthias
A1 - Andrei, Cristina
A1 - Liero, Armin
A1 - Lossy, Richard
A1 - Heinrich, Wolfgang
T1 - Highly Linear Broadband GaN-based Low-noise Amplifier
Y1 - 2010
ER -
TY - CHAP
A1 - Rudolph, Matthias
A1 - Flucke, Jens
A1 - Schnieder, Frank
A1 - Schmückle, Franz-Josef
A1 - Heinrich, Wolfgang
T1 - On the magnetic coupling between bondwires in power-transistor packages
Y1 - 2010
ER -
TY - CHAP
A1 - Rudolph, Matthias
A1 - Heinrich, Wolfgang
T1 - Assessment of power-transistor package models: distributed versus lumped approach
Y1 - 2010
ER -
TY - JOUR
A1 - Rudolph, Matthias
A1 - Rheinfelder, C. N.
A1 - Beißwanger, F.
A1 - Heinrich, Wolfgang
T1 - Nonlinear Modeling of SiGe HBTs up to 50 GHz
Y1 - 1997
ER -
TY - JOUR
A1 - Rudolph, Matthias
A1 - Schnieder, Frank
A1 - Heinrich, Wolfgang
T1 - Modeling Emitter Breakdown in GaAs-Based HBTs
Y1 - 2002
ER -
TY - GEN
A1 - Rudolph, Matthias
A1 - Lenk, Friedrich
A1 - Llopis, O.
A1 - Heinrich, Wolfgang
T1 - On the Simulation of Low-Frequency Noise Upconversion in InGaP/GaAs HBTs
T2 - IEEE transactions on microwave theory and techniques
Y1 - 2006
SN - 0018-9480
VL - 54
IS - 7
SP - 2954
EP - 2961
ER -
TY - JOUR
A1 - Rudolph, Matthias
A1 - Behtash, Reza
A1 - Dörner, Ralf
A1 - Hirche, Klaus
A1 - Wurfl, Joachim
A1 - Heinrich, Wolfgang
A1 - Tränkle, Günther
T1 - Analysis of the Survivability of GaN Low-Noise Amplifiers
Y1 - 2007
ER -
TY - JOUR
A1 - Rudolph, Matthias
A1 - Korndörfer, Falk
A1 - Heymann, Peter
A1 - Heinrich, Wolfgang
T1 - Compact Large-Signal Shot-Noise Model for HBTs
Y1 - 2008
ER -
TY - JOUR
A1 - Rudolph, Matthias
A1 - Meliani, Chafik
A1 - Dörner, Ralf
A1 - Heinrich, Wolfgang
T1 - Bandwidth Potential of HBT-Based TWAs as a Function of Transistor fmax/fT Ratio
Y1 - 2008
ER -
TY - JOUR
A1 - Rudolph, Matthias
A1 - Khalil, I.
A1 - Liero, Armin
A1 - Lossy, Richard
A1 - Heinrich, Wolfgang
T1 - GaN HEMT Potential for Low Noise Highly Linear RF Applications
Y1 - 2008
ER -
TY - GEN
A1 - Rudolph, Matthias
A1 - Chaturvedi, Nidhi
A1 - Hirche, Klaus
A1 - Wurfl, K.
A1 - Heinrich, Wolfgang
A1 - Tränkle, Günther
T1 - Highly Rugged 30 GHz GaN Low-Noise Amplifiers
Y1 - 2009
ER -
TY - JOUR
A1 - Rudolph, Matthias
A1 - Tischler, Th.
A1 - Kilk, A.
A1 - Heinrich, Wolfgang
T1 - Via Arrays for Grounding in Multilayer Packaging - Frequency Limits and Design Rules
Y1 - 2003
ER -
TY - JOUR
A1 - Rudolph, Matthias
A1 - Meliani, Chafik
A1 - Heinrich, Wolfgang
T1 - A 40 Gbps GaAs-HBT Distributed Amplifier with an Over-fT Cut-Off Frequency: Analyticaland Experimental Study
Y1 - 2005
ER -
TY - JOUR
A1 - Rudolph, Matthias
A1 - Behtash, Reza
A1 - Hirche, Klaus
A1 - Würfl, Joachim
A1 - Heinrich, Wolfgang
A1 - Tränkle, Günther
T1 - A Highly Survivable 3-7 GHz GaN Low-Noise Amplifier
Y1 - 2006
ER -
TY - GEN
A1 - Rudolph, Matthias
A1 - Meliani, Chafik
A1 - Kurpas, Paul
A1 - Schmidt, L.
A1 - Rheinfelder, C. N.
A1 - Heinrich, Wolfgang
T1 - A 2.4 GHz GaAs-HBT Class-E MMIC Amplifier with 65% PAE
Y1 - 2007
ER -
TY - GEN
A1 - Rudolph, Matthias
A1 - Dewitz, Mike
A1 - Liero, Armin
A1 - Khalil, I.
A1 - Chaturvedi, Nidhi
A1 - Wipf, Christian
A1 - Bertenburg, R. M.
A1 - Miller, J.
A1 - Würfl, Joachim
A1 - Heinrich, Wolfgang
A1 - Tränkle, Günther
T1 - Highly Robust X-Band LNA with Extremely Short Recovery Time
Y1 - 2009
ER -
TY - CHAP
A1 - Rudolph, Matthias
A1 - Kurpas, Paul
A1 - Brunner, F.
A1 - Doser, W.
A1 - Maaßdorf, Andre
A1 - Dörner, Ralf
A1 - Blanck, H.
A1 - Heinrich, Wolfgang
A1 - Würfl, Joachim
T1 - Development and Characterization of GaInP/GaAs HBTs for High Voltage Operation
Y1 - 2001
ER -
TY - CHAP
A1 - Rudolph, Matthias
A1 - Meliani, Chafik
A1 - Hilsenbeck, Jochen
A1 - Heinrich, Wolfgang
T1 - A GaAs-HBT Distributed Amplifier with Near-fT Cut-off Frequency for High-Bitrate Transmissions
Y1 - 2004
ER -
TY - CHAP
A1 - Rudolph, Matthias
A1 - Schnieder, Frank
A1 - Heinrich, Wolfgang
A1 - Schnieder, Frank
T1 - Investigation of Thermal Crunching Effects in Fishbone-Type Layout Power GaAs-HBTs
Y1 - 2004
ER -
TY - CHAP
A1 - Rudolph, Matthias
A1 - Meliani, Chafik
A1 - Hilsenbeck, Jochen
A1 - Heinrich, Wolfgang
A1 - Meliani, Chafik
T1 - A 40 Gbps Broadband Amplifier for Modulator-Driver Applications Using a GaAs HBT Technology
Y1 - 2004
ER -
TY - CHAP
A1 - Rudolph, Matthias
A1 - Meliani, Chafik
A1 - Heinrich, Wolfgang
T1 - On-Chip GaAs-HBT Broadband-Coupled High-Bitrate Modulator Driver TWAs
Y1 - 2005
ER -
TY - CHAP
A1 - Rudolph, Matthias
A1 - Schnieder, Frank
A1 - Schmückle, Franz-Josef
A1 - Heinrich, Wolfgang
T1 - An Analysis of Source Connections in GaN Power Transistor Packages
T2 - Proceedings, Microwave Conference (GeMiC), 2012 The 7th in Ilmenau, Germany
Y1 - 2012
SN - 978-3-9812668-4-9
CY - Ilmenau
ER -
TY - CHAP
A1 - Rudolph, Matthias
A1 - Dörner, Ralf
A1 - Ngnintedem, Eric
A1 - Heinrich, Wolfgang
T1 - Noise Modeling of GaN HEMT Devices
T2 - Microwave Integrated Circuits Conference (EuMIC), 2012 7th European , Amsterdam
Y1 - 2012
UR - http://ieeexplore.ieee.org/xpl/mostRecentIssue.jsp?punumber=6476772
SN - 978-1-4673-2302-4
SN - 978-2-87487-026-2
SP - 159
EP - 162
PB - IEEE
CY - Piscataway, NJ
ER -
TY - CHAP
A1 - Andrei, Cristina
A1 - Dörner, Ralf
A1 - Bengtsson, Olof
A1 - Chevtchenko, Serguei A.
A1 - Heinrich, Wolfgang
A1 - Rudolph, Matthias
T1 - Highly Linear X-Band GaN-Based Low-Noise Amplifier
T2 - Signals, Systems, and Electronics (ISSSE), 2012 International Symposium on , Potsdam
Y1 - 2012
UR - http://ieeexplore.ieee.org/xpl/mostRecentIssue.jsp?punumber=6362332
SN - 978-1-4673-4454-8
SN - 978-1-4673-4453-1
PB - IEEE
CY - Piscataway, NJ
ER -
TY - CHAP
A1 - Lenk, Friedrich
A1 - Klockenhoff, Harald
A1 - Maaßdorf, Andre
A1 - Würfl, Joachim
A1 - Heinrich, Wolfgang
T1 - A 3.2 W coplanar single-device X-band amplifier with GaAs HBT
T2 - Gallium Arsenide and Other Semiconductor Application Symposium, 2005, EGAAS 2005
N2 - High-power GaInP/GaAs HBTs with high breakdown voltage for X-band applications are presented. To demonstrate the capabilities of these devices, a simple monolithic amplifier is realized. For a single 12-finger device with 2/spl times/70 /spl mu/m/sup 2/ emitter finger size, an output power of 3.2 W at 9 GHz with 47% PAE is achieved.
Y1 - 2005
UR - http://ieeexplore.ieee.org/stamp/stamp.jsp?arnumber=1637147
SN - 88-902012-0-7
SP - 49
EP - 52
PB - Horizon House Publ.
CY - London
ER -
TY - CHAP
A1 - Lenk, Friedrich
A1 - Schott, Matthias
A1 - Hilsenbeck, Jochen
A1 - Heinrich, Wolfgang
T1 - Low phase-noise GaAs-HBT monolithic W-band oscillator
T2 - 34th European Microwave Conference, Tuesday 12th, Wednesday 13th and Thursday 14th October
Y1 - 2004
SN - 1-58053-992-0
SP - 897
EP - 900
PB - London
CY - Horizon House Publ.
ER -
TY - CHAP
A1 - Hilsenbeck, Jochen
A1 - Lenk, Friedrich
A1 - Heinrich, Wolfgang
A1 - Würfl, Joachim
T1 - Low phase noise MMIC VCOs for Ka-band applications with improved GaInP/GaAs-HBT technology
T2 - Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 2003, 25th Annual Technical Digest 2003, San Diego, California, November 9 - 12, 2003
N2 - We report on the technology and performance of fully monolithic coplanar voltage-controlled oscillators (VCOs) with GaInP/GaAs-HBTs as the active devices. With our optimized HBT process, the parasitic base resistance R/sub B/ and extrinsic base-collector capacitance C/sub EX/ are significantly reduced. In this way, the maximum frequency of oscillation F/sub max/ is increased from 100 to 170 GHz. This allows us to realize fundamental 38 GHz-VCOs with very low phase noise. At an oscillation frequency F/sub res/=34.2/spl plusmn/0.2 GHz, the VCO reaches phase noise levels of -87 dBc/Hz @ 100 kHz and -108 dBc/Hz @ 1 MHz offset frequency, respectively. To our knowledge, these phase noise values are the lowest GaAs data for Ka-band applications reported so far.
Y1 - 2003
SN - 0-7803-7833-4
U6 - https://doi.org/10.1109/GAAS.2003.1252399
SP - 223
EP - 226
PB - IEEE Service Center
CY - Piscataway, NJ
ER -
TY - CHAP
A1 - Lenk, Friedrich
A1 - Schott, Matthias
A1 - Heinrich, Wolfgang
T1 - Modeling and Measurement of Phase Noise in GaAs HBT Ka-Band Oscillators
T2 - 31st European Microwave Conference, 2001, 24 - 26 Sept. 2001
N2 - Accurate oscillator phase-noise simulation is a key problem in MMIC design, which is not solved satisfactory so far and needs further investigation. In this paper, a Ka-band MMIC oscillator with GaInP/GaAs HBT and on-chip resonator is treated as an example. Measured phase noise reaches -90 dBc/Hz and below at 100 kHz offset. To evaluate phase-noise prediction, the circuit is simulated using different commercial simulation tools and HBT models. Considerable differences in simulation results are observed.
Y1 - 2001
U6 - https://doi.org/10.1109/EUMA.2001.339168
SP - 1
EP - 4
PB - Microwave Engineering Europe
CY - London
ER -
TY - CHAP
A1 - Kuhnert, Holger
A1 - Lenk, Friedrich
A1 - Hilsenbeck, Jochen
A1 - Würfl, Joachim
A1 - Heinrich, Wolfgang
T1 - Low phase-noise GaInP/GaAs-HBT MMIC oscillators up to 36 GHz
T2 - 2001 IEEE MTT-S International Microwave Symposium digest, May 20 - 25, 2001, Phoenix Civic Plaza, Phoenix, AZ, vol. 3
N2 - Monolithic coplanar 18 and 36 GHz oscillators with GaInP/GaAs-HBTs and on-chip resonators are presented. Measured phase-noise reaches -93 dBc/Hz and -91 dBc/Hz at 100 kHz offset for 18 and 36 GHz, respectively. These values demonstrate that GaAs-HBT oscillators yield a phase-noise performance comparable to SiGe-HBTs, with the potential for higher frequencies.
Y1 - 2001
SN - 0-7803-6538-0
U6 - https://doi.org/10.1109/MWSYM.2001.967198
SP - 1551
EP - 1554
PB - IEEE Service Center
CY - Piscataway, NJ
ER -
TY - CHAP
A1 - Schott, Matthias
A1 - Kuhnert, Holger
A1 - Lenk, Friedrich
A1 - Hilsenbeck, Jochen
A1 - Würfl, Joachim
A1 - Heinrich, Wolfgang
T1 - 38 GHz push-push GaAs-HBT MMIC oscillator
T2 - 2002 IEEE MTT-S International Microwave Symposium digest, June 2 - 7, 2002, Washington State Convention & Trade Center, Seattle, Washington, vol. 2
N2 - Two differential coplanar MMIC HBT oscillators are presented, a fixed frequency and a VCO version. They provide single-ended output at the second harmonic at 38 GHz as well as differential output at 19 GHz. The oscillators show excellent phase noise performance, the fixed-frequency type reaches -95 dBc/Hz at the fundamental frequency and -89 dBc/Hz at the second harmonic, at 100 kHz offset.
Y1 - 2002
SN - 0-7803-7239-5
U6 - https://doi.org/10.1109/MWSYM.2002.1011761
SP - 839
EP - 842
PB - IEEE Service Center
CY - Piscataway, NJ
ER -
TY - CHAP
A1 - Lenk, Friedrich
A1 - Schott, Matthias
A1 - Hilsenbeck, Jochen
A1 - Würfl, Joachim
A1 - Heinrich, Wolfgang
T1 - Low phase-noise monolithic GaInP/GaAs-HBT VCO for 77 GHz
T2 - 2003 IEEE MTT-S International Microwave Symposium digest, June 8 - 13, 2003, Pennsylvania Convention Center, Philadelphia, Pennsylvania, vol. 2
N2 - Coplanar W-band push-push VCO MMICs using GaInP/GaAs HBTs are presented. One circuit operates at 77 GHz with phase noise of -92 dBc/Hz at 1 MHz offset. To our knowledge this is the first fully monolithic W-band VCO with phase noise better than -90 dBc/Hz. A second version with two varactor diodes yields an almost threefold relative tuning bandwidth.
Y1 - 2003
SN - 0-7803-7695-1
U6 - https://doi.org/10.1109/MWSYM.2003.1212515
SP - 903
EP - 906
PB - IEEE Service Center
CY - Piscataway, NJ
ER -
TY - CHAP
A1 - Lenk, Friedrich
A1 - Schott, Matthias
A1 - Hilsenbeck, Jochen
A1 - Heinrich, Wolfgang
T1 - Optimizing MMIC reflection-type oscillators
T2 - 2004 IEEE MTT-S International Microwave Symposium digest, June 6 - 11, 2004, Fort Worth Convention Center, Fort Worth, Texas, vol. 3
N2 - In this paper, optimization of the loaded quality factor QL for reflection-type HBT oscillator is investigated. Main result is an optimum relation between the S parameter phases at the three transistor ports. To support this finding, a 35.5 GHz MMIC VCO phase noise better than -85 dBc/Hz at 100 kHz offset frequency is demonstrated.
Y1 - 2004
SN - 0-7803-8331-1
U6 - https://doi.org/10.1109/MWSYM.2004.1338816
SP - 1341
EP - 1344
PB - IEEE Service Center
CY - Piscataway, NJ
ER -
TY - CHAP
A1 - Schmückle, Franz-Josef
A1 - Lenk, Friedrich
A1 - Hutter, Matthias
A1 - Klein, Matthias
A1 - Oppermann, Hermann
A1 - Engelmann, Gunter
A1 - Töpper, Michael
A1 - Riepe, Klaus J.
A1 - Heinrich, Wolfgang
T1 - W-band flip-chip VCO in thin-film environment
T2 - 2005 IEEE MTT-S International Microwave Symposium, June 12 - 17, 2005, Long Beach, CA
N2 - A flip-chip packaging approach for W-band GaAs chips is presented using thin-film structures on silicon as carrier substrate. Reliability investigations indicate that, depending on bump size, the CTE mismatch is not critical and an underfiller does not provide distinctive benefits. A 77 GHz VCO GaAs-HBT MMIC is flip-chip-mounted to demonstrate validity of the packaging scheme.
Y1 - 2005
SN - 0-7803-8845-3
U6 - https://doi.org/10.1109/MWSYM.2005.1516837
PB - IEEE Operations Center
CY - Piscataway, NJ
ER -
TY - CHAP
A1 - Schott, Matthias
A1 - Lenk, Friedrich
A1 - Meliani, Chafik
A1 - Heinrich, Wolfgang
T1 - Low phase noise X-band push-push oscillator with frequency divider
T2 - 2005 IEEE MTT-S International Microwave Symposium, June 12 - 17, 2005, Long Beach, CA
N2 - A MMIC Colpitts oscillator in push-push configuration with integrated frequency divider using InGaP/GaAs HBTs is presented. The output is taken from the second harmonic port while the fundamental signal is fed to a frequency divider by two thus providing a reference signal at one quarter of the output frequency. The MMIC VCO reaches state-of-the-art phase-noise performance in X-band down to -120dBc/Hz at 1MHz offset frequency at high output power and a tuning range of 4%.
Y1 - 2005
SN - 0-7803-8845-3
U6 - https://doi.org/10.1109/MWSYM.2005.1516986
PB - IEEE Operations Center
CY - Piscataway, NJ
ER -
TY - CHAP
A1 - Meliani, Chafik
A1 - Lenk, Friedrich
A1 - Heinrich, Wolfgang
T1 - 24 GHz Low Power VCOs and Analog Frequency Dividers
T2 - IEEE MTT-S International Microwave Symposium digest, 11 - 16 June 2006, San Francisco, CA
N2 - 24 GHz VCOs and frequency dividers with very low power consumption are presented. The circuits are realized as GaAs HBT MMICs. They comprise a VCO with high efficiency >17% and 12% tuning range at only 18 mW DC consumption as well as several frequency dividers. In order to minimize power consumption, the latter use the injection-locked frequency-divider (ILFD) concept. Divider ratios of 2 and 4 are realized, power consumption as low as 25 mW for a divider-by-2 is achieved. This demonstrates the capabilities of the analog concept in realizing dividers for mm-wave frequencies at DC consumption levels far below their digital counterparts
Y1 - 2006
SN - 0-7803-9541-7
U6 - https://doi.org/10.1109/MWSYM.2006.249744
SP - 1801
EP - 1804
PB - IEEE Operations Center
CY - Piscataway, NJ
ER -
TY - GEN
A1 - Lenk, Friedrich
A1 - Schott, Matthias
A1 - Hilsenbeck, Jochen
A1 - Heinrich, Wolfgang
T1 - A new design approach for low phase-noise reflection-type MMIC oscillators
T2 - IEEE transactions on microwave theory and techniques
N2 - In this paper, optimization of the loaded quality factor QL for reflection-type heterojunction bipolar transistor (HBT) oscillators is investigated. The main result is an optimum relation between the S-parameter phases at the three transistor ports. A new design strategy for this type of oscillator is proposed. The analysis is verified by comparing several Ka-band monolithic-microwave integrated-circuit oscillators in GaAs HBT technology with different resonators. The measured loaded QL values correspond to the measured phase noise of the circuits. At an oscillation frequency of 33 GHz, an excellent phase noise of -87 dBc/Hz at 100-kHz offset frequency is achieved over the whole tuning range.
Y1 - 2004
U6 - https://doi.org/10.1109/TMTT.2004.837319
SN - 0018-9480
VL - 52
IS - 12
SP - 2725
EP - 2731
ER -
TY - GEN
A1 - Johansen, Tom K.
A1 - Rudolph, Matthias
A1 - Jensen, Thomas
A1 - Kraemer, Tomas
A1 - Weimann, Nils
A1 - Schnieder, Frank
A1 - Krozer, Viktor
A1 - Heinrich, Wolfgang
T1 - Modeling of InP HBTs in Transferred-Substrate Technology for Millimeter-Wave Applications
T2 - Microwave Integrated Circuits Conference (EuMIC), 2013, 8th European, 6–8 October 2013 Nuremberg, Germany
Y1 - 2013
SN - 978-2-87487-032-3
SP - 280
EP - 283
PB - IEEE
CY - Piscataway, NJ
ER -
TY - GEN
A1 - Schnieder, Frank
A1 - Bengtsson, Olof
A1 - Schmückle, Franz-Josef
A1 - Rudolph, Matthias
A1 - Heinrich, Wolfgang
T1 - Simulation of RF Power Distribution in a Packaged GaN Power Transistor Using an Electro-Thermal Large-Signal Description
T2 - IEEE transactions on microwave theory and techniques
Y1 - 2013
U6 - https://doi.org/10.1109/TMTT.2013.2261089
SN - 0018-9480
VL - 61
IS - 7
SP - 2603
EP - 2609
ER -
TY - GEN
A1 - Johansen, Tom K.
A1 - Rudolph, Matthias
A1 - Jensen, Thomas
A1 - Kraemer, Tomas
A1 - Weimann, Nils
A1 - Schnieder, Frank
A1 - Krozer, Viktor
A1 - Heinrich, Wolfgang
T1 - Small- and large-signal modeling of InP HBTs in transferred-substrate technology
T2 - International Journal of Microwave and Wireless Technologies
Y1 - 2014
U6 - https://doi.org/10.1017/S1759078714000051
VL - 6
IS - 3-4
SP - 243
EP - 251
ER -
TY - CHAP
A1 - Andrei, Cristina
A1 - Bengtsson, Olof
A1 - Dörner, Ralf
A1 - Chevtchenko, Serguei A.
A1 - Heinrich, Wolfgang
A1 - Rudolph, Matthias
T1 - Dynamic behaviour of a Low-Noise Amplifier GaN MMIC under input power overdrive
T2 - Proceedings of 45th European Microwave Conference, Paris 2015
Y1 - 2015
U6 - https://doi.org/10.1109/EuMC.2015.7345742
SP - 231
EP - 234
PB - IEEE
ER -
TY - GEN
A1 - Nosaeva, Ksenia
A1 - Weimann, Nils
A1 - Rudolph, Matthias
A1 - John, Wilfred
A1 - Krüger, Olaf
A1 - Heinrich, Wolfgang
T1 - Improved thermal management of InP transistors in transferred-substrate technology with diamond heat-spreading layer
T2 - Electronics Letters
Y1 - 2015
U6 - https://doi.org/10.1049/el.2015.1135
SN - 1350-911X
VL - 51
IS - 13
SP - 1010
EP - 1012
ER -
TY - GEN
A1 - Nosaeva, Ksenia
A1 - Weimann, Nils
A1 - Rudolph, Matthias
A1 - John, Wilfred
A1 - Krüger, Olaf
A1 - Heinrich, Wolfgang
T1 - Thin ice: Diamond films could more than double the power output achievable with transistors in the ‘Terahertz gap’ by improving thermal management
T2 - Electronics Letters
Y1 - 2015
U6 - https://doi.org/10.1049/el.2015.1943
SN - 1350-911X
VL - 51
IS - 13
SP - S. 959
ER -
TY - GEN
A1 - Nosaeva, Ksenia
A1 - Al-Sawaf, Thualfiqa
A1 - John, Wilfred
A1 - Stoppel, Dimitri
A1 - Rudolph, Matthias
A1 - Schmückle, Franz-Josef
A1 - Janke, Bernd
A1 - Krüger, Olaf
A1 - Krozer, Viktor
A1 - Heinrich, Wolfgang
A1 - Weimann, Nils
T1 - Multifinger Indium Phosphide Double-Heterostructure Transistor Circuit Technology With Integrated Diamond Heat Sink Layer
T2 - IEEE Transactions on Electron Devices
Y1 - 2016
U6 - https://doi.org/10.1109/TED.2016.2533669
SN - 0018-9383
SN - 1557-9646
VL - 63
IS - 5
SP - 1846
EP - 1852
ER -
TY - CHAP
A1 - Rudolph, Matthias
A1 - Andrei, Cristina
A1 - Dörner, Ralf
A1 - Chevtchenko, Serguei A.
A1 - Heinrich, Wolfgang
T1 - Noise in GaN HEMTs and Circuits
T2 - 24th International Conference on Noise and Fluctuations (ICNF), Vilnius, Lithuania, June 20-23, 2017
Y1 - 2017
SN - 978-1-5090-2760-6
U6 - https://doi.org/10.1109/ICNF.2017.7985978
SP - 1
EP - 4
PB - IEEE
CY - Piscataway, NJ
ER -
TY - CHAP
A1 - Andrei, Cristina
A1 - Dörner, Ralf
A1 - Chevtchenko, Serguei A.
A1 - Heinrich, Wolfgang
A1 - Rudolph, Matthias
T1 - On the Optimization of GaN HEMT Layout for Highly Rugged Low-Noise Amplifier Design
T2 - 12th European Microwave Integrated Circuits Conference (EuMIC), 8-10 Oct. 2017, Nuremberg, Germany
Y1 - 2017
SN - 978-2-87487-048-4
U6 - https://doi.org/10.23919/EuMIC.2017.8230705
SP - 244
EP - 247
PB - IEEE
CY - Piscataway, NJ
ER -
TY - CHAP
A1 - Luo, Peng
A1 - Schnieder, Frank
A1 - Bengtsson, Olof
A1 - Heinrich, Wolfgang
A1 - Rudolph, Matthias
T1 - Modeling the Virtual Gate Voltage in Dispersive GaN HEMTs
T2 - IEEE/MTT-S International Microwave Symposium, 10-15 June 2018, Philadelphia, PA, USA
Y1 - 2018
SN - 978-1-5386-5067-7
U6 - https://doi.org/10.1109/MWSYM.2018.8439389
SP - 728
EP - 731
PB - IEEE
CY - Piscataway, NJ
ER -
TY - GEN
A1 - Shivan, T.
A1 - Kaule, Evelyne
A1 - Hossain, M.
A1 - Dörner, Ralf
A1 - Johansen, Tom K.
A1 - Stoppel, Dimitri
A1 - Boppel, S.
A1 - Heinrich, Wolfgang
A1 - Krozer, Viktor
A1 - Rudolph, Matthias
T1 - Design and modeling of a ultra-wideband low-noise distributend amplifier in InP DHBT technology
T2 - International Journal of Microwave and Wireless Technologies
Y1 - 2019
U6 - https://doi.org/10.1017/S1759078719000515
SN - 1759-0795
N1 - MIKON 2018 / EuMW 2018 (Part II)
VL - 11
IS - 7
SP - 635
EP - 644
ER -
TY - GEN
A1 - Luo, Peng
A1 - Schnieder, Frank
A1 - Bengtsson, Olof
A1 - Vadalà, Valeria
A1 - Raffo, Antonio
A1 - Heinrich, Wolfgang
A1 - Rudolph, Matthias
T1 - A streamlined drain-lag model for GaN HEMTs based on pulsed S-parameter measurements
T2 - International Journal of Microwave and Wireless Technologies
Y1 - 2019
U6 - https://doi.org/10.1017/S1759078719000060
SN - 1759-0787
SN - 1759-0795
VL - 11
IS - 2
SP - 121
EP - 129
ER -
TY - GEN
A1 - Erkelenz, Kevin
A1 - Sriperumbuduri, Venkata Pawan
A1 - Flisgen, Thomas
A1 - Rudolph, Matthias
A1 - Johansen, Tom K.
A1 - Heinrich, Wolfgang
A1 - Wentzel, Andreas
T1 - Output Matching Network Design for Highly Efficient InP-DHBT W-Band PAs Utilizing a Defected Ground Structure
T2 - 2020 German Microwave Conference (GeMiC), 09-11 March 2020, Cottbus, Germany
Y1 - 2020
UR - https://ieeexplore.ieee.org/document/9080208
SN - 978-3-9820-3971-8
SN - 978-1-7281-4206-7
N1 - INSPEC Accession Number: 19575344
SP - 268
EP - 271
PB - IEEE
ER -
TY - GEN
A1 - Krause, Sascha
A1 - Beleniotis, Petros
A1 - Bengtsson, Olof
A1 - Rudolph, Matthias
A1 - Heinrich, Wolfgang
T1 - Characterization of the Impairment and Recovery of GaN-HEMTs in Low-Noise Amplifiers under Input Overdrive
T2 - 2021 IEEE MTT-S International Microwave Symposium (IMS), 07-25 June 2021, Atlanta, GA, USA
Y1 - 2021
SN - 978-1-6654-0307-8
SN - 978-1-6654-3141-5
U6 - https://doi.org/10.1109/IMS19712.2021.9574839
SN - 2576-7216
SN - 0149-645X
SP - 515
EP - 518
ER -
TY - GEN
A1 - Krause, Sascha
A1 - Michler, Fabian
A1 - Kölpin, Alexander
A1 - Rudolph, Matthias
A1 - Heinrich, Wolfgang
T1 - A Digital Correction Method for Increased Dynamic Range in Interferometric Six-Port Radars
T2 - IEEE Microwave and Wireless Components Letters
Y1 - 2021
U6 - https://doi.org/10.1109/LMWC.2021.3084338
SN - 1558-1764
SN - 1531-1309
VL - 31
IS - 8
SP - 997
EP - 1000
ER -