TY - GEN A1 - Niu, Gang A1 - Capellini, Giovanni A1 - Schubert, Markus Andreas A1 - Niermann, Tore A1 - Zaumseil, Peter A1 - Katzer, Jens A1 - Krause, Hans-Michael A1 - Skibitzki, Oliver A1 - Lehmann, Michael A1 - Xie, Ya-Hong A1 - Känel, Hans von A1 - Schröder, Thomas T1 - Dislocation-free Ge nano-crystals via pattern dependent selective Ge heteroepitaxy on Si nano-tip wafers T2 - Scientific Reports Y1 - 2016 U6 - https://doi.org/10.1038/srep22709 SN - 2045-2322 VL - 6 SP - 22709 ER - TY - GEN A1 - Salvalaglio, Marco A1 - Bergamaschini, Roberto A1 - Isa, Fabio A1 - Scaccabarozi, Andrea A1 - Isella, Giovanni A1 - Backofen, Rainer A1 - Voigt, Axel A1 - Montalenti, Francesco A1 - Capellini, Giovanni A1 - Marzegalli, Anna A1 - Schroeder, Thomas A1 - Känel, Hans von A1 - Miglio, Leo T1 - Engineering coalescence by annealing of 3D Ge microstructures into high-qualtiy suspended layers on Si T2 - ACS Applied Materials and Interfaces Y1 - 2015 U6 - https://doi.org/10.1021/acsami.5b05054 SN - 1944-8244 VL - 7 IS - 34 SP - 19219 EP - 19225 ER - TY - GEN A1 - Schlykow, Viktoria A1 - Klesse, Wolfgang Matthias A1 - Niu, Gang A1 - Taoka, Noriyuki A1 - Yamamoto, Yuji A1 - Skibitzki, Oliver A1 - Barget, M. R. A1 - Zaumseil, Peter A1 - Känel, Hans von A1 - Schubert, Markus Andreas A1 - Capellini, Giovanni A1 - Schroeder, Thomas T1 - Selective growth of fully relaxed GeSn nano-islands by nanoheteroepitaxy on patterned Si(001) T2 - Applied Physics Letters Y1 - 2016 U6 - https://doi.org/10.1063/1.4967500 SN - 1077-3118 VL - 109 IS - 20 SP - 202102 ER -