TY - GEN A1 - Schmeißer, Dieter A1 - Haeberle, Jörg T1 - Intrinsic localized gap states in IGZO and its parent single crystalline TCOs T2 - Thin Solid Films N2 - We report on the X-ray absorption data for Indium–Gallium–Zink–Oxide thin films, amorphous ZnO films, amorphous SnOx films, and single crystalline In2O3, Ga2O3, ZnO, and SnO2 data. These absorption data probe the empty conduction band states explicitly. Also they allow for an elemental assignment using resonant excitation to derive the contributions of each metal ion. We find that the lowest states appear right at the Fermi energy and result from configuration interaction induced charge transfer states which we consider as intrinsic gap states. KW - Transparent conducting oxide KW - X-ray photoelectron spectroscopy KW - Resonant photoemission spectroscopy KW - X-ray absorption spectroscopy KW - Electronic band structure KW - Intrinsic localized gap states Y1 - 2016 U6 - https://doi.org/10.1016/j.tsf.2016.02.010 SN - 0040-6090 SN - 1879-2731 IS - 603 SP - 206 EP - 211 ER - TY - CHAP A1 - Tallarida, Massimo A1 - Henkel, Karsten A1 - Gargouri, Hassan A1 - Haeberle, Jörg A1 - Gruska, Bernd A1 - Arens, Matthias A1 - Schmeißer, Dieter T1 - New opportunities with Plasma enhanced atomic layer deposition (PE-ALD) of oxides T2 - Verhandlungen der Deutschen Physikalischen Gesellschaft N2 - Thermal Atomic layer deposition (T-ALD) of oxides is obtained by the pulsed alternation of a metal precursor and an oxygen source, typically H2O or O3, and the reactions leading to ALD are thermally activated. With plasma enhanced ALD (PE-ALD), instead, the oxygen source is represented by an oxygen-containing plasma. The higher reactivity of the plasma-generated species extend the capabilities of ALD: improved film quality and increased flexibility in process conditions, such as growth at low temperature, are typical advantages of PE-ALD over T-ALD. We report on results on the preparation of thin (<100 nm) aluminum oxide (Al2O3) films on silicon substrates using T-ALD and PE-ALD in the SENTECH SI ALD LL system. Films were deposited in the temperature range between room temperature (RT) and 200∘C. We characterized the films with spectroscopic ellipsometry (thickness, refractive index, growth rate) over 4" wafers and with X-ray photoelectron spectroscopy. All films resulted in a high degree of homogeneity, independent of the deposition temperature. Investigations with capacitance-voltage and conductance-voltage measurements showed a very low interface states density for the PE-ALD films. KW - Atomic layer deposition KW - Plasma enhanced atomic layer deposition KW - X-ray photoelectron spectroscopy KW - spectroscopic ellipsometry KW - dielectric properties KW - Al2O3 Y1 - 2014 UR - http://www.dpg-verhandlungen.de/year/2014/conference/dresden/part/ds/session/49/contribution/3?lang=en SN - 0420-0195 PB - Deutsche Physikalische Gesellschaft CY - Bad Honnef ER -