TY - GEN A1 - Gorgoi, Mihaela A1 - Gerlach, Dominic A1 - Wilks, Regan G. A1 - Wippler, David A1 - Wimmer, Manuel A1 - Lozac'h, Mickaël A1 - Duarte, Roberto Felix A1 - Mück, Leonie Anna A1 - Meier, M. A1 - Ueda, Shigenori A1 - Yoshikawa, Hideki A1 - Lips, Klaus A1 - Rech, Bernd A1 - Sumiya, Masatomo A1 - Hüpkes, Jürgen A1 - Kobayashi, Kaoru A1 - Bär, Marcus T1 - The silicon/zinc oxide interface in amorphous silicon-based thin-film solar cells: Understanding an empirically optimized contact T2 - Applied Physics Letters N2 - The electronic structure of the interface between the boron-doped oxygenated amorphous silicon “window layer” (a-SiOx:H(B)) and aluminum-doped zinc oxide (ZnO:Al) was investigated using hard x-ray photoelectron spectroscopy and compared to that of the boron-doped microcrystalline silicon (μc-Si:H(B))/ZnO:Al interface. The corresponding valence band offsets have been determined to be (−2.87 ± 0.27) eV and (−3.37 ± 0.27) eV, respectively. A lower tunnel junction barrier height at the μc-Si:H(B)/ZnO:Al interface compared to that at the a-SiOx:H(B)/ZnO:Al interface is found and linked to the higher device performances in cells where a μc-Si:H(B) buffer between the a-Si:H p-i-n absorber stack and the ZnO:Al contact is employed. Y1 - 2013 SN - 1077-3118 VL - 103 IS - 2 SP - 023903 ER - TY - CHAP A1 - Schwarz, Harald A1 - Pfeiffer, Klaus A1 - Erbring, H.-P. A1 - Zeidler, Jens A1 - Dorendorf, Stefan T1 - Anforderungen an zukunftsfähige Netze Y1 - 2011 ER -