TY - GEN A1 - Steuer, Oliver A1 - Schwarz, Daniel A1 - Oehme, Michael A1 - Schulze, J. A1 - Maczko, H. A1 - Kudrawiec, Robert A1 - Fischer, Inga Anita A1 - Heller, R. A1 - Hübner, R. A1 - Khan, M. M. A1 - Georgiev, Yordan M. A1 - Zhou, Shengqiang A1 - Helm, M. A1 - Prucnal, Slawomir T1 - Band-gap and strain engineering in GeSn alloys using post-growth pulsed laser melting T2 - Journal of Physics: Condensed Matter Y1 - 2022 U6 - https://doi.org/10.1088/1361-648X/aca3ea SN - 1361-648X VL - 35 IS - 5 ER - TY - GEN A1 - Gibson, Andrew R. A1 - Donkó, Zoltán A1 - Alelyani, Layla A1 - Bischoff, Lena A1 - Hübner, Gerrit A1 - Bredin, Jérôme A1 - Doyle, Scott A1 - Korolov, Ihor A1 - Niemi, Kari A1 - Mussenbrock, Thomas A1 - Hartmann, Peter A1 - Dedrick, James P. A1 - Schulze, Julian A1 - Gans, Timo A1 - O'Connell, Deborah T1 - Disrupting the spatio-temporal symmetry of the electron dynamics in atmospheric pressure plasmas by voltage waveform tailoring T2 - Plasma Sources Science and Technology Y1 - 2019 U6 - https://doi.org/10.1088/1361-6595/aaf535 SN - 1361-6595 SN - 0963-0252 VL - 28 IS - 1 ER - TY - GEN A1 - Bielefeldt, Jens A1 - Basener, Kai-Uwe A1 - Khan, Siddique R. A1 - Massah, Mozhdeh A1 - Wiesbrock, Hans-Werner A1 - Scharoba, Stefan A1 - Hübner, Michael T1 - DeepTest: How Machine Learning Can Improve the Test of Embedded Systems  T2 - 10th Mediterranean Conference on Embedded Computing (MECO), 7-10 June 2021 Y1 - 2021 SN - 978-1-6654-3912-1 SN - 978-1-6654-2989-4 U6 - https://doi.org/10.1109/meco52532.2021.9460182 SP - 1 EP - 6 PB - IEEE CY - Piscataway, NJ ER - TY - GEN A1 - Bielefeldt, Jens A1 - Basener, Kai-Uwe A1 - Khan, Siddique R. A1 - Massah, Mozhdeh A1 - Wiesbrock, Hans-Werner A1 - Scharoba, Stefan A1 - Hübner, Michael T1 - Einsatz von Deep Learning für den Test Eingebetteter Systeme  T2 - Informatik 2021: computer science & sustainability, 27. September-01. Oktober 2021, Berlin Y1 - 2021 SN - 978-3-88579-708-1 U6 - https://doi.org/10.18420/INFORMATIK2021-166 PB - Gesellschaft für Informatik e.V. CY - Bonn ER - TY - GEN A1 - Steuer, O. A1 - Liedke, Maciej O. A1 - Butterling, M. A1 - Schwarz, D. A1 - Schulze, J. A1 - Li, Z. A1 - Wagner, A. A1 - Fischer, Inga Anita A1 - Hübner, R. A1 - Zhou, S. T1 - Evolution of point defects in pulsed-laser-melted Ge1-xSnx probed by positron annihilation lifetime spectroscopy T2 - Journal of Physics: Condensed Matter N2 - Direct-band-gap Germanium-Tin alloys (Ge1-xSnx) with high carrier mobilities are promising materials for nano- and optoelectronics. The concentration of open volume defects in the alloy, such as Sn and Ge vacancies, influences the final device performance. In this article, we present an evaluation of the point defects in molecular-beam-epitaxy grown Ge1-xSnx films treated by post-growth nanosecond-range pulsed laser melting (PLM). Doppler broadening – variable energy positron annihilation spectroscopy and variable energy positron annihilation lifetime spectroscopy are used to investigate the defect nanostructure in the Ge1-xSnx films exposed to increasing laser energy density. The experimental results, supported with ATomic SUPerposition calculations, evidence that after PLM, the average size of the open volume defects increases, which represents a raise in concentration of vacancy agglomerations, but the overall defect density is reduced as a function of the PLM fluence. At the same time, the positron annihilation spectroscopy analysis provides information about dislocations and Ge vacancies decorated by Sn atoms. Moreover, it is shown that the PLM reduces the strain in the layer, while dislocations are responsible for trapping of Sn and formation of small Sn-rich-clusters. KW - GeSn KW - laser annealing KW - positron annihilation KW - PLM KW - point defects Y1 - 2023 UR - https://iopscience.iop.org/article/10.1088/1361-648X/ad0a10/meta U6 - https://doi.org/10.1088/1361-648X/ad0a10 SN - 0953-8984 VL - 36 IS - 8 SP - 1 EP - 11 ER -