TY - GEN A1 - Strobel, Carsten A1 - Alvarado Chavarin, Carlos A1 - Knaut, Martin A1 - Albert, Matthias A1 - Heinzig, André A1 - Gummadi, Likhith A1 - Wenger, Christian A1 - Mikolajick, Thomas ED - Giannazzo, Filippo ED - Agnello, Simonpietro ED - Seravalli, Luca ED - Bondino, Federica T1 - p-Type Schottky contacts for graphene adjustable-Barrier phototransistors T2 - Nanomaterials N2 - The graphene adjustable-barriers phototransistor is an attractive novel device for potential high speed and high responsivity dual-band photodetection. In this device, graphene is embedded between the semiconductors silicon and germanium. Both n-type and p-type Schottky contacts between graphene and the semiconductors are required for this device. While n-type Schottky contacts are widely investigated, reports about p-type Schottky contacts between graphene and the two involved semiconductors are scarce. In this study, we demonstrate a p-type Schottky contact between graphene and p-germanium. A clear rectification with on–off ratios of close to 10 3 (±5 V) and a distinct photoresponse at telecommunication wavelengths in the infrared are achieved. Further, p-type silicon is transferred to or deposited on graphene, and we also observe rectification and photoresponse in the visible range for some of these p-type Schottky junctions. These results are an important step toward the realization of functional graphene adjustable-barrier phototransistors. KW - phototransistor KW - GABT KW - graphene KW - p-type KW - silicon KW - germanium KW - high responsivity KW - high speed KW - dual-band KW - photodetection Y1 - 2024 U6 - https://doi.org/10.3390/nano14131140 SN - 2079-4991 VL - 14 IS - 13 PB - MDPI ER -