TY - CHAP A1 - Dudek, Peter A1 - Lupina, Grzegorz A1 - Kozłowski, Grzegorz A1 - Dabrowski, Jarek Marek A1 - Lippert, Gunther A1 - Müssig, Hans-Joachim A1 - Schmeißer, Dieter A1 - Schroeder, Thomas T1 - Band structure and electrical properties of MBE grown HfO2 - based alkaline earth perovskites T2 - Verhandlungen der Deutschen Physikalischen Gesellschaft, Reihe 6, Bd. 45 N2 - Ultra thin dielectric films (<20 nm) deposited on TiN electrodes are interesting for MIM capacitor application. High capacitance density and dielectric permittivity must be accompanied by extremely low leakage currents (10−8 A/cm2) at bias 0.5 V. To achieve such low leakage currents, high band gap and proper band alignment is required. Occupied electronic states can be probed with standard laboratory photoemission methods. Probing of unoccupied states is more challenging. Synchrotron based PES in combination with XAS forms a powerful method to study the band alignment. ASAM end station located at the U 49/2 PGM 2 beamline of BESSY II (Berlin) offers excellent conditions for performing such measurements. We investigated HfO2 - based alkaline earth perovskite - BaHfO3 with subsequent admixture of TiO2, resulting in formation of BaHf0.5Ti0.5O3 compound. The analysis of data indicates that band gap for HfO2 is similar to BaHfO3 and amounts 5.8 eV; for BaHf0.5Ti0.5O3 it decreases to 3.8 eV. We conclude that the addition of TiO2 to BaHfO3 increases significantly the dielectric permittivity but also impacts the band gap alignment. The conduction band offset shrinks, influencing the leakage current behavior. Y1 - 2010 UR - http://www.dpg-verhandlungen.de/year/2010/conference/regensburg/part/ds/session/24/contribution/4 SN - 0420-0195 SP - S. 232 PB - Deutsche Physikalische Gesellschaft CY - Bad Honnef ER - TY - GEN A1 - Dudek, Piotr T. A1 - Lupina, Grzegorz A1 - Kozłowski, Grzegorz A1 - Zaumseil, Peter A1 - Bauer, Jakob A1 - Fursenko, Oksana A1 - Dabrowski, Jarek Marek A1 - Schmidt, R. A1 - Lippert, Gunther A1 - Müssig, Hans-Joachim A1 - Schröder, Thomas A1 - Schmeißer, Dieter A1 - Zschech, Ehrenfried T1 - Atomic-scale engineering of future high-k dynamic random access memory dielectrics: The example of partial Hf substitution by Ti in BaHfO3 T2 - Journal of Vacuum Science and Technology / B Y1 - 2011 SN - 2166-2754 VL - 29 IS - 1 ER - TY - GEN A1 - Capellini, Giovanni A1 - De Seta, Monica A1 - Zaumseil, Peter A1 - Kozłowski, Grzegorz A1 - Schroeder, Thomas T1 - High temperature x-ray diffraction measurements on Ge/Si(001) heterostructures: a study on the residual tensile strain T2 - Journal of Applied Physics Y1 - 2012 U6 - https://doi.org/10.1063/1.3702443 SN - 0021-8979 VL - 111 IS - 7 ER - TY - GEN A1 - Kozłowski, Grzegorz A1 - Fursenko, Oksana A1 - Zaumseil, Peter A1 - Schroeder, Thomas A1 - Vorderwestner, M. A1 - Storck, Peter T1 - The epitaxial growth of low defect SiGe buffer layers for integration of new materials on 300 mm silicon wafers T2 - ECS transactions Y1 - 2012 SN - 1938-6737 VL - 50 IS - 9 SP - 613 EP - 621 ER - TY - GEN A1 - Zaumseil, Peter A1 - Kozłowski, Grzegorz A1 - Yamamoto, Yuji A1 - Schubert, Markus Andreas A1 - Schroeder, Thomas T1 - X-ray Characterization of Ge Dots Epitaxially Grown on Nano-structured Si Islands on SOI Substrates T2 - Journal of Applied Crystallography Y1 - 2013 SN - 0021-8898 VL - 46 IS - 4 SP - 868 EP - 873 ER - TY - GEN A1 - Zaumseil, Peter A1 - Yamamoto, Yuji A1 - Bauer, Joachim A1 - Schubert, Markus Andreas A1 - Matejova, Jana A1 - Kozłowski, Grzegorz A1 - Schröder, Thomas A1 - Tillack, Bernd T1 - Preparation and Characterization of Ge Epitaxially Grown on Nano-structured Periodic Si Pillars and Bars on Si(001) Substrate T2 - Thin Solid Films Y1 - 2012 U6 - https://doi.org/10.1016/j.tsf.2011.10.178 SN - 0040-6090 VL - 520 IS - 8 SP - 3240 EP - 3244 ER - TY - GEN A1 - Kozłowski, Grzegorz A1 - Zaumseil, Peter A1 - Schubert, Markus Andreas A1 - Yamamoto, Yuji A1 - Schülli, Tobias U. A1 - Tillack, Bernd A1 - Schroeder, Thomas T1 - Growth and relaxation processes in Ge nanocrystals on free-standing Si(001) nanopillars T2 - Nanotechnology Y1 - 2012 U6 - https://doi.org/10.1088/0957-4484/23/11/115704 SN - 0957-4484 VL - 23 IS - 11 SP - 115704 EP - 115711 ER - TY - GEN A1 - Capellini, Giovanni A1 - Kozłowski, Grzegorz A1 - Yamamoto, Yuji A1 - Lisker, Marco A1 - Tillack, Bernd A1 - Ghrib, A. A1 - Kersauson, M. de A1 - El Kurdi, M. A1 - Boucaud, P. A1 - Schroeder, Thomas T1 - Tensile strained Ge layers obtained via Si-CMOS compatible approach T2 - Journal of Applied Physics Y1 - 2013 VL - 113 IS - 1 SP - 013513-1 EP - 013513-6 ER - TY - GEN A1 - Zaumseil, Peter A1 - Kozłowski, Grzegorz A1 - Schubert, Markus Andreas A1 - Yamamoto, Yuji A1 - Bauer, J. A1 - Schülli, Tobias U. A1 - Tillack, Bernd A1 - Schroeder, Thomas T1 - The role of SiGe buffer in growth and relaxation of Ge on free-standing Si(001) nanopillars T2 - Nanotechnology Y1 - 2012 SN - 1361-6528 VL - 23 IS - 35 SP - 355706 ER - TY - GEN A1 - Bauer, J. A1 - Yamamoto, Yuji A1 - Zaumseil, Peter A1 - Fursenko, Oksana A1 - Schulz, K. A1 - Kozłowski, Grzegorz A1 - Schubert, Markus Andreas A1 - Schroeder, Thomas A1 - Tillack, Bernd T1 - Nanostructured Silicon for Ge Nanoheteroepitaxy T2 - Microelectronics Engineering Y1 - 2012 SN - 0167-9317 VL - 97 SP - 169 EP - 172 ER - TY - GEN A1 - Zaumseil, Peter A1 - Kozłowski, Grzegorz A1 - Yamamoto, Yuji A1 - Bauer, J. A1 - Schubert, Markus Andreas A1 - Schülli, Tobias U. A1 - Tillack, Bernd A1 - Schroeder, Thomas T1 - Compliant Si nanostructures on SOI for Ge nanoheteroepitaxy – a case study for lattice mismatched semiconductor integration on Si(001) T2 - Journal of Applied Physics Y1 - 2012 SN - 0021-8979 VL - 112 IS - 4 SP - 043506 EP - 043511 ER -