TY - CHAP A1 - Müller, Klaus A1 - Burkov, Yevgen A1 - Mandal, Dipankar A1 - Henkel, Karsten A1 - Paloumpa, Ioanna A1 - Goryachko, Andriy A1 - Schmeißer, Dieter ED - Wöll, Christof T1 - Microscopic and spectroscopic characterization of interfaces and dielectric layers for OFET devices T2 - Organic Electronics : structural and Electronic Properties of OFETs KW - microscopic KW - spectrocsopic KW - dielectric Y1 - 2009 SN - 978-3-527-40810-8 SP - 445 EP - 468 PB - Wiley-VCH CY - Weinheim ER - TY - GEN A1 - Müller, K. A1 - Goryachko, Andriy A1 - Burkov, Yevgen A1 - Schwiertz, Carola A1 - Ratzke, Markus A1 - Köble, J. A1 - Reif, Jürgen A1 - Schmeißer, Dieter T1 - Scanning Kelvin probe and photoemission electron microscopy of organic source-drain structures T2 - Synthetic Metals Y1 - 2004 VL - 146 IS - 3 SP - 377 EP - 382 ER - TY - CHAP A1 - Goryachko, Andriy A1 - Beuckert, Guido A1 - Zaumseil, Peter A1 - Wagner, Guenter A1 - Schmeißer, Dieter T1 - Investigations of Pr2O3 growth modes on 4H-SiC(0001) Surfaces T2 - Verhandlungen der Deutschen Physikalischen Gesellschaft N2 - The SiC is suited especially well for high power and high voltage semiconductor devices. In order to increase the reliability against electrical breakdown of metal-insulator-semiconductor (MIS) structures, one needs to use the insulator with possibly higher dielectric constant. Pr2O3 is shown to posses a much higher dielectric constant (equals 30) than traditionally used SiO2. Therefore, Pr2O3/SiC is an excellent material combination for high voltage MIS devices. The 4H-SiC(0001) substrates are characterised with scanning tunneling microscopy, while the Pr2O3 surface - with atomic force microscopy technique. We show distinct growth modes of Pr2O3 film, such as 3D and layer by layer growth. The crystalline structure and film thickness are determined by X-ray diffraction and its chemical composition by X-ray photoelectron spectroscopy. The Pr2O3 film characteristics are optimised for high-quality MIS structures in terms of lateral uniformity, low interface states density and leakage current, as well as physical integrity. KW - SiC KW - Pr2O3 KW - X-ray photoelectron spectroscopy (XPS) KW - X-Ray diffraction Y1 - 2004 UR - http://www.dpg-verhandlungen.de/year/2004/conference/regensburg/part/ds/session/9/contribution/4?lang=de SN - ISSN 0420-0195 PB - Deutsche Physikalische Gesellschaft CY - Bad Honnef ER - TY - CHAP A1 - Hoffmann, Patrick A1 - Goryachko, Andriy A1 - Schmeißer, Dieter T1 - Growth of oxynitrides on Si-rich 4H-SiC(0001) surfaces T2 - Verhandlungen der Deutschen Physikalischen Gesellschaft N2 - Oxynitride layers are grown on 4H-SiC(0001) by a thermal treatment in N2O. The nitrogen content is controlled by varying the growth conditions (N2O pressure and substrate temperature) and the nitrogen incorporation is found to be stronger for higher substrate temperatures and lower N2O pressures. Excess carbon is generated due to SiC decomposition under such growth conditions (high temperature and low N2O pressure) which leads to unwanted high interface state density and has to be avoided. Our approach is to prepare a Si-rich or even Si-covered SiC surface by Si evaporation. Upon oxidation in N2O the additional silicon is expected to compensate the loss of silicon from the SiC while preparation. The Si-rich SiC surface as well as the grown layers were investigated by photoelectron spectroscopy (XPS) for chemical analysis and by AFM/STM for analysis of the surface morphology. Concerning the chemical analysis we focus on the total nitrogen content, on the amount of silicon nitride Si3N4 and of silicon oxynitride SiOxNy, and on the existence of sub-oxides which build the interface between SiC and the oxynitride layers. KW - X-Ray photoelectron spectroscopy KW - scanning tunneling microscopy (STM) KW - atomic force microscopy (AFM) KW - silicon oxynitride KW - 4H-SiC(0001) Y1 - 2005 UR - http://www.dpg-verhandlungen.de/year/2005/conference/berlin/part/hl/session/26/contribution/1?lan=en PB - Deutsche Physikalische Gesellschaft CY - Bad Honnef ER - TY - JOUR A1 - Goryachko, Andriy A1 - Yeromenko, Y. A1 - Henkel, Karsten A1 - Wollweber, Jürgen A1 - Schmeißer, Dieter T1 - The Si(001)/C2H2 interaction to form a buffer layer for 3C-SiC growth JF - Physica status solidi / A N2 - The intial stages of Si(001) interaction with C2H2 were investigated with XPS and surface profilometry. The carbon enriched layer serves as a buffer between Si substrate and the 3C-SiC film aimed at growing on Si(001). Such parameters as substrate temperature and process duration come into a complicated interplay of C deposition, its reaction with Si and out-diffusion of the later from the substrate. Three distinct regimes, namely graphite dominated, carbide dominated and roughness dominated are found to result from this interplay. Y1 - 2004 SN - 0031-8965 VL - 201 IS - 2 SP - 245 EP - 248 ER - TY - JOUR A1 - Goryachko, Andriy A1 - Paloumpa, Ioanna A1 - Beuckert, Guido A1 - Burkov, Yevgen A1 - Schmeißer, Dieter T1 - The Interaction of Pr2O3 with 4H-SiC(0001)surface JF - Physica status solidi / C N2 - Praseodymium oxide (Pr2O3) as a hetero-oxide on SiC(0001) represents a promising semiconductor / high-K dielectric material combination. We prepared thin films (<3 nm) of Pr2O3 on 4H-SiC(0001) surfaces by a wet chemical process involving aqueous solutions of Pr(NO3)3. Synchrotron radiation photoelectron spectroscopy (SR-PES) is used to study the chemical composition of these films after deposition and annealing in 300-900 %B0C range. The Si2p and C1s core level emissions are analysed in detail and reveal that praseodymium-silicate is formed at the interface. Our data are compared to corresponding studies of the Pr2O3 interaction with Si(001) surfaces. Y1 - 2004 SN - 1610-1634 VL - 1 IS - 2 SP - 265 EP - 268 ER - TY - GEN A1 - Müller, Klaus A1 - Goryachko, Andriy A1 - Burkov, Yevgen A1 - Schwiertz, Carola A1 - Ratzke, Markus A1 - Köble, J. A1 - Reif, Jürgen A1 - Schmeißer, Dieter T1 - Scanning Kelvin Probe Microscopy and Photoemission electron microscopy of organic source-drain structures T2 - Synthetic Metals N2 - n order to optimize organic field effect transistors (OFETs), the characterisation of active-layer surfaces in terms of their roughness, chemical composition and distribution of surface potentials is important. We report on high-resolution microscopic mapping of organic source-drain structures with P3HT as the semiconductor by scanning Kelvin probe microscopy (SKPM) and photoemission electron microscopy (PEEM). It was shown that PEEM is able to characterise the surface morphology (roughness), the chemical homogeneity and the composition of organic structures. The two-dimensional mapping of surface potentials by SKPM with applied source-drain voltages is shown to be an important ingredient of OFETs failure mode analysis. KW - Photoemission electron microscopy (PEEM) KW - Scanning Kelvin probe microscopy (SKPM) KW - OFET Y1 - 2004 SN - 0379-6779 VL - 146 IS - 3 SP - 377 EP - 382 ER - TY - THES A1 - Goryachko, Andriy T1 - Investigations of perspective materials for aggressively scaled gate stacks and contact structures of MOS devices KW - silicon KW - praseodymium oxide KW - tungsten nitride KW - tungsten silicide KW - cobalt silicide KW - scanning tunneling microscopy KW - Angerelection spectroscopy Y1 - 2002 U6 - http://nbn-resolving.de/urn/resolver.pl?urn:nbn:de:kobv:co1-000000342 UR - http://opus4.kobv.de/opus4-btu/frontdoor/index/index/docId/59 ER - TY - JOUR A1 - Seifarth, Olaf A1 - Burkov, Yevgen A1 - Goryachko, Andriy A1 - Schmeißer, Dieter A1 - Sydorenko, Alexander A1 - Krenek, Radim A1 - Stamm, Manfred T1 - Photoelectron spectroscopy and microscopy on Cr nano particels embedded into block copolymers Y1 - 2005 ER -