TY - GEN A1 - Salvalaglio, Marco A1 - Bergamaschini, Roberto A1 - Isa, Fabio A1 - Scaccabarozi, Andrea A1 - Isella, Giovanni A1 - Backofen, Rainer A1 - Voigt, Axel A1 - Montalenti, Francesco A1 - Capellini, Giovanni A1 - Marzegalli, Anna A1 - Schroeder, Thomas A1 - Känel, Hans von A1 - Miglio, Leo T1 - Engineering coalescence by annealing of 3D Ge microstructures into high-qualtiy suspended layers on Si T2 - ACS Applied Materials and Interfaces Y1 - 2015 U6 - https://doi.org/10.1021/acsami.5b05054 SN - 1944-8244 VL - 7 IS - 34 SP - 19219 EP - 19225 ER - TY - GEN A1 - Fischer, Inga Anita A1 - Brehm, Moritz A1 - De Seta, Monica A1 - Isella, Giovanni A1 - Paul, Douglas J. A1 - Virgilio, Michele A1 - Capellini, Giovanni T1 - On-chip infrared photonics with Si-Ge-heterostructures: What is next? T2 - APL Photonics N2 - The integration of Ge on Si for photonics applications has reached a high level of maturity: Ge photodetectors are available on the Si platform in foundry processes, and Si/Ge heterostructure multiple quantum-well photodiodes are rapidly progressing toward applications in light modulation. These successes result from decades of development of high-quality material growth and integration, which, more recently, has sparked an increasingly broad field of photonic device research based on Si/Ge heterostructures that extends from quantum cascade lasers to sensors. Here, we highlight selected recent structure and device developments as well as possible future trends that are enabled by the maturity of the SiGe material platform KW - Heterostructures KW - Photodetectors KW - Photonics KW - Nanowires KW - Plasmonics KW - Epitaxy KW - Quantum wells KW - Lasers KW - Sensors KW - Electronic band structure Y1 - 2022 UR - https://aip.scitation.org/doi/10.1063/5.0078608 U6 - https://doi.org/10.1063/5.0078608 SN - 2378-0967 VL - 7 IS - 5 SP - 050901-1 EP - 050901-20 ER -