TY - GEN A1 - Steuer, Oliver A1 - Schwarz, Daniel A1 - Oehme, Michael A1 - Schulze, J. A1 - Maczko, H. A1 - Kudrawiec, Robert A1 - Fischer, Inga Anita A1 - Heller, R. A1 - Hübner, R. A1 - Khan, M. M. A1 - Georgiev, Yordan M. A1 - Zhou, Shengqiang A1 - Helm, M. A1 - Prucnal, Slawomir T1 - Band-gap and strain engineering in GeSn alloys using post-growth pulsed laser melting T2 - Journal of Physics: Condensed Matter Y1 - 2022 U6 - https://doi.org/10.1088/1361-648X/aca3ea SN - 1361-648X VL - 35 IS - 5 ER - TY - GEN A1 - Wen, Shuyu A1 - Shaikh, Mohd Saif A1 - Steuer, Oliver A1 - Prucnal, Slawomir A1 - Grenzer, Jörg A1 - Hübner, René A1 - Turek, Marcin A1 - Pyszniak, Krzysztof A1 - Reiter, Sebastian A1 - Fischer, Inga Anita A1 - Georgiev, Yordan M. A1 - Helm, Manfred A1 - Wu, Shaoteng A1 - Luo, Jun-Wei A1 - Zhou, Shengqiang A1 - Berencén, Yonder T1 - Room-temperature extended short-wave infrared GeSn photodetectors realized by ion beam techniques T2 - Applied Physics Letters N2 - GeSn alloys hold great promise as high-performance, low-cost, near- and short-wavelength infrared photodetectors with the potential to replace the relatively expensive and currently market-dominant InGaAs- and InSb-based photodetectors. In this Letter, we demonstrate room-temperature GeSn pn photodetectors fabricated by a complementary metal-oxide-semiconductor compatible process, involving Sn and P ion implantation and flash-lamp annealing prior to device fabrication. The fabrication process enables the alloying of Ge with Sn at concentrations up to 4.5% while maintaining the high-quality single-crystalline structure of the material. This allows us to create Ge0.955Sn0.045 pn photodetectors with a low dark current density of 12.8 mA/cm2 and a relatively high extended responsivity of 0.56 A/W at 1.71 μm. These results pave the way for the implementation of a cost-effective, scalable, and CMOS-compatible short-wavelength infrared detector technology. KW - Electric currents KW - Semiconductors KW - Photodetectors KW - C-MOS KW - Electromagnetic radiation detectors KW - Crystal structure KW - Alloys KW - Ion implantation KW - Ion beam analysis Y1 - 2023 UR - https://pubs.aip.org/aip/apl/article/123/8/081109/2907921 U6 - https://doi.org/10.1063/5.0166799 SN - 0003-6951 VL - 123 IS - 8 SP - 1 EP - 7 ER -