TY - GEN A1 - Kraatz, Matthias A1 - Gall, Martin A1 - Zschech, Ehrenfried A1 - Schmeißer, Dieter A1 - Ho, Paul S. T1 - A model for statistical electromigration simulation with dependence on capping layer and Cu microstructure in two dimensions T2 - Computational Materials Science N2 - A model has been developed to simulate electromigration degradation in an interconnect segment in two dimensions using finite differences. The model was deployed on a parallel computer to statistically assess the lifetimes. The simulation takes into account the diffusion paths for electromigration mass transport along the grain boundaries and the capping layer. The microstructure is generated with a Monte Carlo algorithm, using a modified Potts model. Diffusivities along the grain boundaries and the capping layers were applied as multiples of a base diffusivity and were statistically scattered. The simulation results correlate well with electromigration tests. KW - Electromigration KW - Grain growth KW - Computer simulation KW - 2D KW - Copper Interconnects KW - On-chip KW - Statistics KW - Parallel computing Y1 - 2016 U6 - https://doi.org/10.1016/j.commatsci.2016.04.020 SN - 1879-0801 SN - 0927-0256 VL - 120 SP - 29 EP - 35 ER - TY - GEN A1 - Ho, Paul S. A1 - Zschech, Ehrenfried A1 - Schmeißer, Dieter A1 - Meyer, Moritz Andreas A1 - Huebner, Rene A1 - Hauschildt, Meike A1 - Zhang, Lijuan A1 - Gall, Martin A1 - Kraatz, Matthias T1 - Scaling effects on microstructure and reliability for cu interconnects KW - scaling KW - microstructure KW - interconnects Y1 - 2010 ER -