TY - CHAP A1 - Haeberle, Jörg A1 - Gaspar, Diana A1 - Barquinha, Pedro A1 - Machulik, Stephan A1 - Janowitz, Christoph A1 - Galazka, Zbigniew A1 - Schmeißer, Dieter T1 - A spectroscopic comparison of AOS thin films and TCO single crystals T2 - Verhandlungen der Deutschen Physikalischen Gesellschaft N2 - Amorphous oxide semiconductors (AOS) and transparent conductive oxides (TCO) are today one of most attractive fields of research in many industrial products, like e.g. high definition, low cost, transparent, and flexible displays. We got the unique possibility to measure a-GIZO and a-SnOx thin films and compare their electronic properties with those of In2O3, Ga2O3, ZnO, and SnO2 single crystals. We use resPES to study the electronic properties. We report on the core levels, the VB PES data, partial Integrated Yield (pIY) and the XAS absorption data. From these we are able to derive the elemental ratio, the pDOS as well as the band scheme. At the O1s resonance we observe multiple Auger processes from which we deduce that a band of localized defect states is located between the Fermi energy and the CBM. The resonant profiles taken at the corresponding metal edges indicate that metal states are involved in the DOS. KW - Amorphous oxide semiconductors (AOS) KW - Transparent conductive oxides (TCO) KW - In2O3 KW - Ga2O3 KW - ZnO KW - SnO2 KW - GIZO KW - resonant photoelectron spectroscopy Y1 - 2014 UR - http://www.dpg-verhandlungen.de/year/2014/conference/dresden/part/hl/session/107/contribution/15?lang=en PB - Deutsche Physikalische Gesellschaft CY - Bad Honnef ER -