TY - GEN A1 - Sonia, G. A1 - Richter, E. A1 - Brunner, F. A1 - Denker, A. A1 - Lossy, R. A1 - Mai, M. A1 - Lenk, Friedrich A1 - Bundesmann, J. A1 - Pensl, G. A1 - Schmidt, J. A1 - Zeimer, U. A1 - Wang, L. A1 - Baskar, K. A1 - Weyers, M. A1 - Würfl, Joachim A1 - Tränkle, Günther T1 - 2 MeV ion irradiation effects on AlGaN/GaN HFET devices T2 - Solid-State Electronics N2 - AlGaN/GaN heterostructure field effect transistors (HFETs) were irradiated with 2 MeV protons, carbon, oxygen, iron and krypton ions with fluences ranging from 1 × 109 cm−2 to 1 × 1013 cm−2. DC, pulsed I–V characteristics, loadpull and S-parameters of the AlGaN HFET devices were measured before and after irradiation. In parallel, a thick GaN reference layer was also irradiated with the same ions and was characterized by X-ray diffraction, photoluminescence, Hall measurements before and after irradiation. Small changes in the device performance were observed after irradiation with carbon and oxygen at a fluence of 5 × 1010 cm−2. Remarkable changes in device characteristics were seen at a fluence of 1 × 1012 cm−2 for carbon, oxygen, iron and krypton irradiation. Similarly, remarkable changes were also observed in the GaN layer for irradiations with fluence of 1 × 1012 cm−2. The results found on devices and on the GaN layer were compared and correlated. Y1 - 2008 UR - http://www.sciencedirect.com/science/article/pii/S0038110108000671 SN - 0038-1101 VL - 52 IS - 7 SP - 1011 EP - 1017 ER - TY - JOUR A1 - Beblik, Andreas J. A1 - Richter, G. M. A1 - Schmalstieg, K. A1 - Richter, O. T1 - N-dynamics and nitrate leaching under rotational and continuous set-aside - a case study at the field and catchment scale Y1 - 1998 ER - TY - GEN A1 - Gnanapragasam, S. A1 - Richter, E. A1 - Brunner, F. A1 - Denker, A. A1 - Lossy, R. A1 - Mai, M. A1 - Lenk, Friedrich A1 - Opitz-Coutureau, J. A1 - Pensl, G. A1 - Schmidt, J. A1 - Zeimer, U. A1 - Wang, L. A1 - Krishnan, B. A1 - Weyers, M. A1 - Würfl, Joachim A1 - Tränkle, Günther T1 - Irradiation effects on AlGaN HFET devices and GaN layers T2 - Journal of Materials Science: Materials in Electronics N2 - AlGaN/GaN heterostructure field effect transistors (HFETs) were irradiated with protons as well as carbon, oxygen, iron and krypton ions of high (68 and 120 MeV) and low (2 MeV) energy with fluences in the range from 1x107 to 1x1013 cm-2. High energy irradiation with protons, carbon and oxygen produced no degradation in devices while krypton irradiation at the fluence of 1x1010 cm-2 resulted in a small reduction of 2% in the transconductance. Similarly, for GaN samples irradiated with protons, carbon and oxygen at high energy no changes were seen by XRD, PL and Hall effect, while changes in lattice constant and a reduction in PL intensity were observed after irradiation with high energy krypton. Low energy irradiation with carbon and oxygen at a fluence of 5x1010 cm-2 results in small change in the device performance while remarkable changes in device characteristics are seen at a fluence of 1x1012 cm-2 for carbon, oxygen, iron and krypton irradiation. Similarly changes are also observed by XRD, PL and Hall effect for the thick GaN layer irradiated at the fluence of 1x1012 cm-2. The device results and GaN layer properties are strongly correlated. Y1 - 2008 U6 - https://doi.org/10.1007/s10854-008-9589-1 SN - 1573-482X VL - 19 IS - 1 SP - 64 EP - 67 ER - TY - GEN A1 - Sonia, G. A1 - Richter, E. A1 - Brunner, F. A1 - Denker, A. A1 - Lossy, R. A1 - Lenk, Friedrich A1 - Opitz-Coutureau, J. A1 - Mai, M. A1 - Schmidt, J. A1 - Zeimer, U. A1 - Wang, L. A1 - Baskar, K. A1 - Weyers, M. A1 - Würfl, Joachim A1 - Tränkle, Günther T1 - High energy irradiation effects on AlGaN/GaN HFET devices T2 - Semiconductor Science and Technology N2 - The effect of proton, carbon, oxygen and krypton irradiation on AlGaN HFET devices has been studied. Irradiation was performed at 68 and 120 MeV with fluences in the range from 1 × 10^7 to 1 × 10^13 cm2 . Before and after irradiation, dc and pulsed I – V characteristics, loadpull and S -parameters of the AlGaN HFET devices were measured. A thick GaN reference layer was characterized by x-ray diffraction, photoluminescence and Hall measurements before and after irradiation. Proton, carbon and oxygen irradiation show no degradation in devices while krypton irradiation shows a small change at a fluence of 1 × 10 10 cm2 in the device characteristics. The device results are correlated with the thick GaN results. Y1 - 2007 U6 - https://doi.org/10.1088/0268-1242/22/11/007 SN - 0268-1242 VL - 22 IS - 11 SP - 1220 EP - 1224 ER - TY - GEN A1 - Knaut, M. A1 - Spitzer, Stefan G. A1 - Karolyi, L. A1 - Ebert, H.-H. A1 - Richter, P. A1 - Tugtekin, Sems M. A1 - Schuler, S. T1 - Intraoperative Microwave Ablation for Curative Treatment of Atrial Fibrillation in Open Heart Surgery - The MICRO-STAF and MICRO-PASS Pilot Trial T2 - The thoracic and cardiovascular surgeon N2 - Concomitant microwave ablation for curative treatment of atrial fibrillation (AF) was performed in 18 patients with history of chronic atrial fibrillation and indication for open heart surgery, 11 patients with mitral valve replacement and 7 patients with coronary artery bypass grafting. There were no perioperative complications. During the postoperative period most of the patients had intermittent AF, they received low dose Sotalol therapy and electric cardio-versions. Up to now seven patients have reached follow-up day 90. One patient has persistent AF. Two patients had typical atrial flutter that was electrically converted to sinus rhythm (SR), isthmus ablation is planned. The other four patients have SR, one patient without cardioversions. These four patients show recovered atrial function with observed A-wave for transmitral flow. Under visual guidance the continuous atrial lesion lines could be induced effectively and safely by the intraoperative device Lynx. KW - Atrial fibrillation KW - Intraoperative microwave ablation Y1 - 1999 UR - https://www.thieme-connect.com/products/ejournals/abstract/10.1055/s-2007-1013205 U6 - https://doi.org/10.1055/s-2007-1013205 SN - 1439-1902 SN - 0171-6425 VL - 47 IS - Suppl. 3 SP - 379 EP - 384 ER - TY - GEN A1 - Spitzer, Stefan G. A1 - Richter, P. A1 - Knaut, M. A1 - Schüler, S. T1 - Treatment of Atrial Fibrillation in Open Heart Surgery. The Potential Role of Microwave Energy T2 - The Thoracic and Cardiovascular Surgeon Y1 - 1999 SN - 0946-4778 VL - 47 IS - Supplement 3 SP - 374 EP - 378 ER -