TY - GEN A1 - Uhlmann, Max A1 - Krysik, Milosz A1 - Wen, Jianan A1 - Frohberg, Max A1 - Baroni, Andrea A1 - Reddy, Keerthi Dorai Swamy A1 - Pérez, Eduardo A1 - Ostrovskyy, Philip A1 - Piotrowski, Krzysztof A1 - Carta, Corrado A1 - Wenger, Christian A1 - Kahmen, Gerhard T1 - A compact one-transistor-multiple-RRAM characterization platform T2 - IEEE transactions on circuits and systems I : regular papers N2 - Emerging non-volatile memories (eNVMs) such as resistive random-access memory (RRAM) offer an alternative solution compared to standard CMOS technologies for implementation of in-memory computing (IMC) units used in artificial neural network (ANN) applications. Existing measurement equipment for device characterisation and programming of such eNVMs are usually bulky and expensive. In this work, we present a compact size characterization platform for RRAM devices, including a custom programming unit IC that occupies less than 1 mm2 of silicon area. Our platform is capable of testing one-transistor-one-RRAM (1T1R) as well as one-transistor-multiple-RRAM (1TNR) cells. Thus, to the best knowledge of the authors, this is the first demonstration of an integrated programming interface for 1TNR cells. The 1T2R IMC cells were fabricated in the IHP’s 130 nm BiCMOS technology and, in combination with other parts of the platform, are able to provide more synaptic weight resolution for ANN model applications while simultaneously decreasing the energy consumption by 50 %. The platform can generate programming voltage pulses with a 3.3 mV accuracy. Using the incremental step pulse with verify algorithm (ISPVA) we achieve 5 non-overlapping resistive states per 1T1R device. Based on those 1T1R base states we measure 15 resulting state combinations in the 1T2R cells. KW - RRAM KW - Vector Matrix Multiplication Y1 - 2025 U6 - https://doi.org/10.1109/TCSI.2025.3555234 SN - 1549-8328 SP - 1 EP - 12 PB - Institute of Electrical and Electronics Engineers (IEEE) CY - New York ER -