TY - GEN A1 - Killat, Dirk A1 - Kluge, Johannes von A1 - Umbach, Frank A1 - Langenheinrich, Werner A. A1 - Schmitz, Richard T1 - Measurement and modelling of sensitivity and noise of MOS magnetic field-effect transistors T2 - Sensors and Actuators : A, Physical N2 - The characteristics of magnetic field-sensitive split-drain MOSFETs (MAGFETs) have been experimentally measured. The sensitivity depends on the geometry and the operating point of the MAGFET. Particular attention is paid to the lateral parasitic conductance between the split drains. The equivalent spectral noise density of the magnetic flux density is measured. Additionally, a macro-model of the MAGFET has been developed for SPICE. KW - Modelling KW - Magfets KW - Mosfets Y1 - 1997 U6 - https://doi.org/10.1016/S0924-4247(97)80286-5 SN - 0924-4247 VL - 61 IS - 1-3 SP - 346 EP - 351 ER - TY - CHAP A1 - Killat, Dirk A1 - Kluge, Johannes von A1 - Umbach, Frank A1 - Langenheinrich, Werner A. A1 - Schmitz, Richard T1 - Sensitivity and Noise of MOS magnetic field effect transistors T2 - Proceedings of the 26th European Solid State Device Research Conference, Congress Centre, Bologna, Italy, 9 - 11 September 1996 Y1 - 1996 SN - 2-86332-196-X SP - 111 EP - 114 PB - Ed. Frontieres CY - Gif-sur-Yvette ER -