TY - GEN A1 - Kidron, Giora J. A1 - Fischer, Thomas A1 - Xiao, Bo T1 - The ambivalent effect of biocrusts on evaporation: Can the contradictory conclusions be explained? A review T2 - Geoderma Y1 - 2022 U6 - https://doi.org/10.1016/j.geoderma.2022.115805 SN - 1872-6259 VL - Vol. 416 ER - TY - GEN A1 - Kidron, Giora J. A1 - Lichner, Lubomir A1 - Fischer, Thomas A1 - Starinsky, Abraham A1 - Or, Dani T1 - Mechanisms for biocrust-modulated runoff generation – A review T2 - Earth-Science Reviews Y1 - 2022 UR - https://www.sciencedirect.com/science/article/abs/pii/S0012825222001842?via%3Dihub U6 - https://doi.org/10.1016/j.earscirev.2022.104100 SN - 0012-8252 SN - 1872-6828 VL - 231 SP - 1 EP - 22 ER - TY - GEN A1 - Macaulay, Peter J. R. A1 - Baraldsnes, Dziuginta A1 - Brett, Hannah A1 - Paljakka, Antonia A1 - Fischer, Saskia M. T1 - Parent-Teacher Collaborations in Preventing and Tackling Bullying and Cyberbullying: A Systematic Review T2 - 27th Workshop on Aggression 2023, London, 10TH - 11TH NOV Y1 - 2023 UR - https://www.workshoponaggression.com/about-7 U6 - https://doi.org/10.17605/OSF.IO/BNDHG ER - TY - GEN A1 - Krisponeit, Jon-Olaf A1 - Fischer, Simon A1 - Esser, Sven A1 - Moshnyaga, Vasily A1 - Schmidt, Thomas A1 - Piper, Louis F. J. A1 - Flege, Jan Ingo A1 - Falta, Jens T1 - The morphology of VO2/TiO2(001): terraces, facets, and cracks T2 - Scientific Reports N2 - Vanadium dioxide (VO2) features a pronounced, thermally-driven metal-to-insulator transition at 340 K. Employing epitaxial stress on rutile TiO2(001) substrates, the transition can be tuned to occur close to room temperature. Striving for applications in oxide-electronic devices, the lateral homogeneity of such samples must be considered as an important prerequisite for efforts towards miniaturization. Moreover, the preparation of smooth surfaces is crucial for vertically stacked devices and, hence, the design of functional interfaces. Here, the surface morphology of VO2/TiO2(001) films was analyzed by low-energy electron microscopy and diffraction as well as scanning probe microscopy. The formation of large terraces could be achieved under temperature-induced annealing, but also the occurrence of facets was observed and characterized. Further, we report on quasi-periodic arrangements of crack defects which evolve due to thermal stress under cooling. While these might impair some applicational endeavours, they may also present crystallographically well-oriented nano-templates of bulk-like properties for advanced approaches. KW - Vanadium dioxide (VO2) KW - rutile TiO2(001) KW - metal-to-insulator transition KW - morphology KW - crystallography KW - low-energy electron microscopy (LEEM) KW - low-energy electron diffraction (LEED) KW - scanning probe microscopy Y1 - 2020 U6 - https://doi.org/10.1038/s41598-020-78584-9 SN - 2045-2322 VL - 10 ER - TY - GEN A1 - Steuer, Oliver A1 - Schwarz, Daniel A1 - Oehme, Michael A1 - Schulze, J. A1 - Maczko, H. A1 - Kudrawiec, Robert A1 - Fischer, Inga Anita A1 - Heller, R. A1 - Hübner, R. A1 - Khan, M. M. A1 - Georgiev, Yordan M. A1 - Zhou, Shengqiang A1 - Helm, M. A1 - Prucnal, Slawomir T1 - Band-gap and strain engineering in GeSn alloys using post-growth pulsed laser melting T2 - Journal of Physics: Condensed Matter Y1 - 2022 U6 - https://doi.org/10.1088/1361-648X/aca3ea SN - 1361-648X VL - 35 IS - 5 ER - TY - GEN A1 - Wendav, Torsten A1 - Fischer, Inga Anita A1 - Virgilio, Michele A1 - Capellini, Giovanni A1 - Oliveira, F. A1 - Cerqueira, M. F. A1 - Benedetti, A. A1 - Chiussi, Stefano A1 - Zaumseil, Peter A1 - Schwartz, Bernhard A1 - Busch, Kurt A1 - Schulze, J. T1 - Photoluminescence from ultrathin Ge-rich multiple quantum wells observed up to room temperature: Experiments and modeling T2 - Physical Review B 94 Y1 - 2016 U6 - https://doi.org/10.1103/PhysRevB.94.245304 VL - 94 IS - 24 SP - 245304 ER - TY - GEN A1 - Elogail, Yasmine A1 - Berkmann, Fritz A1 - Clausen, Caterina J. A1 - Fischer, Inga Anita A1 - Hänel, Linda A. A1 - Schwarz, Daniel A1 - Schulze, Jörg T1 - Investigation of Ge-Based P-Channel Planar-Doped Barrier FETs integrated on Si T2 - Microelectronics Journal Y1 - 2022 U6 - https://doi.org/10.1016/j.mejo.2022.105404 SN - 1879-2391 VL - 123 ER - TY - GEN A1 - Fischer, Inga Anita A1 - Brehm, Moritz A1 - De Seta, Monica A1 - Isella, Giovanni A1 - Paul, Douglas J. A1 - Virgilio, Michele A1 - Capellini, Giovanni T1 - On-chip infrared photonics with Si-Ge-heterostructures: What is next? T2 - APL Photonics N2 - The integration of Ge on Si for photonics applications has reached a high level of maturity: Ge photodetectors are available on the Si platform in foundry processes, and Si/Ge heterostructure multiple quantum-well photodiodes are rapidly progressing toward applications in light modulation. These successes result from decades of development of high-quality material growth and integration, which, more recently, has sparked an increasingly broad field of photonic device research based on Si/Ge heterostructures that extends from quantum cascade lasers to sensors. Here, we highlight selected recent structure and device developments as well as possible future trends that are enabled by the maturity of the SiGe material platform KW - Heterostructures KW - Photodetectors KW - Photonics KW - Nanowires KW - Plasmonics KW - Epitaxy KW - Quantum wells KW - Lasers KW - Sensors KW - Electronic band structure Y1 - 2022 UR - https://aip.scitation.org/doi/10.1063/5.0078608 U6 - https://doi.org/10.1063/5.0078608 SN - 2378-0967 VL - 7 IS - 5 SP - 050901-1 EP - 050901-20 ER - TY - CHAP A1 - Fischer, J. A1 - Cunningham, Douglas W. A1 - Bartz, Dirk A1 - Wallraven, Christian A1 - Bülthoff, Heinrich H. A1 - Strasser, W. T1 - Measuring the Discernibility of Virtual Objects in Conventional and Stylized Augmented Reality Y1 - 2006 ER - TY - GEN A1 - Zhang, Tingyi A1 - Geyer, Thomas A1 - Silva, Charitha de A1 - Fischer, Jeoffrey A1 - Doolan, Con A1 - Moreau, Danielle J. T1 - Experimental Investigation of Tip Vortex Formation Noise Produced by Wall-Mounted Finite Airfoils T2 - Journal of Aerospace Engineering Y1 - 2021 UR - https://ascelibrary.org/doi/10.1061/%28ASCE%29AS.1943-5525.0001315 U6 - https://doi.org/10.1061/(ASCE)AS.1943-5525.0001315 SN - 1943-5525 VL - 34 IS - 6 ER -