TY - GEN A1 - Weißhaupt, David A1 - Funk, Hannes S. A1 - Sürgers, Christoph A1 - Fischer, Gerda A1 - Oehme, Michael A1 - Schwarz, Daniel A1 - Fischer, Inga Anita A1 - Slageren, Joris van A1 - Schulze, Jörg T1 - Formation of Mn5Ge3 on a Recess-Etched Ge (111) Quantum-Well Structure for Semiconductor Spintronics T2 - 44th International Convention on Information, Communication and Electronic Technology, MIPRO 2021, Opatija, Croatia, September 27 - Oct. 1, 2021 Y1 - 2021 SN - 978-1-6654-4761-4 U6 - https://doi.org/10.23919/MIPRO52101.2021.9596924. SN - 978-953-233-101-1 SP - 45 EP - 49 PB - Piscataway CY - IEEE ER - TY - GEN A1 - Weißhaupt, David A1 - Sürgers, Christoph A1 - Bloos, Dominik A1 - Funk, Hannes Simon A1 - Oehme, Michael A1 - Fischer, Gerda A1 - Schubert, Markus Andreas A1 - Wenger, Christian A1 - van Slageren, Joris A1 - Fischer, Inga Anita A1 - Schulze, Jörg T1 - Lateral Mn5Ge3 spin-valve in contact with a high-mobility Ge two-dimensional hole gas T2 - Semiconductor Science and Technology N2 - Abstract Ge two-dimensional hole gases (2DHG) in strained modulation-doped quantum-wells represent a promising material platform for future spintronic applications due to their excellent spin transport properties and the theoretical possibility of efficient spin manipulation. Due to the continuous development of epitaxial growth recipes extreme high hole mobilities and low effective masses can be achieved, promising an efficient spin transport. Furthermore, the Ge 2DHG can be integrated in the well-established industrial complementary metal-oxide-semiconductor (CMOS) devices technology. However, efficient electrical spin injection into a Ge 2DHG—an essential prerequisite for the realization of spintronic devices—has not yet been demonstrated. In this work, we report the fabrication and low-temperature magnetoresistance (MR) measurements of a laterally structured Mn5Ge3/Ge 2DHG/ Mn5Ge3 device. The ferromagnetic Mn5Ge3 contacts are grown directly into the Ge quantum well by means of an interdiffusion process with a spacing of approximately 130 nm, forming a direct electrical contact between the ferromagnetic metal and the Ge 2DHG. Here, we report for the first time a clear MR signal for temperatures below 13 K possibly arising from successful spin injection into the high mobility Ge 2DHG. The results represent a step forward toward the realization of CMOS compatible spintronic devices based on a 2DHG. KW - two-dimensional hole gas Y1 - 2024 U6 - https://doi.org/10.1088/1361-6641/ad8d06 SN - 0268-1242 VL - 39 IS - 12 SP - 1 EP - 10 PB - IOP Publishing ER - TY - GEN A1 - Schwartz, Bernhard A1 - Oehme, Michael A1 - Kostecki, Konrad A1 - Widmann, Daniel A1 - Gollhofer, Martin A1 - Körner, Roman A1 - Bechler, Stefan A1 - Fischer, Inga Anita A1 - Wendav, Torsten A1 - Kasper, Erich A1 - Schulze, Jörg A1 - Kittler, Martin T1 - Electroluminescence of GeSn/Ge MQW LEDs on Si substrate T2 - Optics Letters Y1 - 2015 U6 - https://doi.org/10.1364/OL40.003209 VL - 40 IS - 13 SP - 3209 EP - 3212 ER - TY - GEN A1 - Wendav, Torsten A1 - Fischer, Inga Anita A1 - Virgilio, Michele A1 - Capellini, Giovanni A1 - Oliveira, F. A1 - Cerqueira, M. F. A1 - Benedetti, Alessandro A1 - Chiussi, Stefano A1 - Zaumseil, Peter A1 - Schwartz, Bernhard A1 - Busch, Kurt A1 - Schulze, J. T1 - Photoluminescence from ultrathin Ge-rich multiple quantum wells observed up to room temperature: Experiments and modeling T2 - Physical Review B 94 Y1 - 2016 U6 - https://doi.org/10.1103/PhysRevB.94.245304 VL - 94 IS - 24 SP - 245304 ER - TY - GEN A1 - Körner, Roman A1 - Schwarz, Daniel A1 - Fischer, Inga Anita A1 - Augel, Lion A1 - Bechler, Stefan A1 - Hänel, Linda A. A1 - Kern, Michael A1 - Oehme, Michael A1 - Rolseth, Erlend Granbo A1 - Schwartz, Bernhard A1 - Weißhaupt, David A1 - Zhang, Wogong A1 - Schulze, Jörg T1 - The Zener-Emitter: A Novel Superluminescent Ge Optical Waveguide-Amplifier with 4.7 dB Gain at 92 mA Based on Free-Carrier Modulation by Drect Zener Tunneling Monolithically Integrated on Si T2 - 2016 IEEE International Electronic Devices Meeting (IEDM), 3-7 Dec. 2016 Y1 - 2016 SN - 978-1-5090-3901-2 SN - 978-1-5090-3902-9 SP - 22.5.1 EP - 22.5.4 PB - IEEE CY - Piscataway, NJ ER - TY - GEN A1 - Schlipf, Jon A1 - Martin, Elena A1 - Stchakovsky, Michel A1 - Benedetti, Alessandro A1 - Fischer, Inga Anita A1 - Schulze, Jörg A1 - Chiussi, Stefano T1 - Ellipsometric analysis of concentration gradients induced in semiconductor crystals by pulsed laser induced epitaxy T2 - Journal of Vacuum Science & Technology B Y1 - 2019 U6 - https://doi.org/10.1116/1.5122777 SN - 2166-2754 VL - 37 IS - 6 ER - TY - GEN A1 - Funk, Hannes S. A1 - Kern, Michael A1 - Weisshaupt, David A1 - Sürgers, Christoph A1 - Fischer, Inga Anita A1 - Oehme, Michael A1 - Slageren, Joris van A1 - Schulze, Jörg T1 - Magnetic Characterization of a Mn Based Ferromagnet on SixGe(1-x-y)Sny with High Sn Content T2 - ECS Transactions Y1 - 2019 U6 - https://doi.org/10.1149/09301.0101ecst SN - 1938-5862 SN - 1938-6737 VL - 93 IS - 1 SP - 101 EP - 104 ER - TY - GEN A1 - Fischer, Inga Anita A1 - Augel, Lion A1 - Berkmann, Fritz A1 - Kawaguchi, Yuma A1 - Schlipf, Jon A1 - Schulze, Jörg T1 - Plasmonics-Integrated Ge PIN-Photodetectors T2 - ECS Transactions Y1 - 2019 U6 - https://doi.org/10.1149/09301.0041ecst SN - 1938-5862 SN - 1938-6737 VL - 93 IS - 1 SP - 41 EP - 44 ER - TY - GEN A1 - Fischer, Inga Anita A1 - Clausen, Caterina J. A1 - Schwarz, Daniel A1 - Zaumseil, Peter A1 - Capellini, Giovanni A1 - Virgilio, Michele A1 - Da Silva Figueira, Maria Cecilia A1 - Birner, Stefan A1 - Koelling, Sebastian A1 - Koenraad, Paul M. A1 - Huang, Michael R. S. A1 - Koch, Christoph T. A1 - Wendav, Torsten A1 - Busch, Kurt A1 - Schulze, Jörg T1 - Composition analysis and transition energies of ultrathin Sn-rich GeSn quantum wells T2 - Physical Review Materials Y1 - 2020 U6 - https://doi.org/10.1103/PhysRevMaterials.4.024601 SN - 2475-9953 VL - 4 IS - 2 ER - TY - GEN A1 - Schlykow, Viktoria A1 - Manganelli, Constanza Lucia A1 - Römer, Friedhard A1 - Clausen, Caterina J. A1 - Augel, Lion A1 - Schulze, Jörg A1 - Katzer, Jens A1 - Schubert, Michael Andreas A1 - Witzigmann, Bernd A1 - Schroeder, Thomas A1 - Capellini, Giovanni A1 - Fischer, Inga Anita T1 - Ge(Sn) nano-island/Si heterostructure photodetectors with plasmonic antennas T2 - Nanotechnology Y1 - 2020 U6 - https://doi.org/10.1088/1361-6528/ab91ef SN - 1361-6528 VL - 31 IS - 34 ER - TY - GEN A1 - Augel, Lion A1 - Fischer, Inga Anita A1 - Gollhofer, Martin A1 - Oehme, Michael A1 - Schulze, Jörg T1 - Comparing Fourier transform infrared spectroscopy results with photocurrent measurements for Ge-on-Si PIN photodetectors with and without Al nanoantennas T2 - Journal of Applied Physics Y1 - 2020 U6 - https://doi.org/10.1063/5.0012279 SN - 1089-7550 VL - 128 IS - 1 SP - 013105-1 EP - 013105-8 ER - TY - GEN A1 - Weißhaupt, David A1 - Funk, Hannes S. A1 - Kern, Michal A1 - Dettling, Marco M. A1 - Schwarz, Daniel A1 - Oehme, Michael A1 - Sürgers, Christoph A1 - Slageren, Joris van A1 - Fischer, Inga Anita A1 - Schulze, Jörg T1 - Weak localization and weak antilocalization in doped Ge1-ySny layers with up to 8% Sn T2 - Journal of Physics: Condensed Matter Y1 - 2021 U6 - https://doi.org/10.1088/1361-648X/abcb68 SN - 1361-648X VL - 33 IS - 8 ER -