TY - GEN
A1 - Weißhaupt, David
A1 - Funk, Hannes S.
A1 - Sürgers, Christoph
A1 - Fischer, Gerda
A1 - Oehme, Michael
A1 - Schwarz, Daniel
A1 - Fischer, Inga Anita
A1 - Slageren, Joris van
A1 - Schulze, Jörg
T1 - Formation of Mn5Ge3 on a Recess-Etched Ge (111) Quantum-Well Structure for Semiconductor Spintronics
T2 - 44th International Convention on Information, Communication and Electronic Technology, MIPRO 2021, Opatija, Croatia, September 27 - Oct. 1, 2021
Y1 - 2021
SN - 978-1-6654-4761-4
U6 - https://doi.org/10.23919/MIPRO52101.2021.9596924.
SN - 978-953-233-101-1
SP - 45
EP - 49
PB - Piscataway
CY - IEEE
ER -
TY - GEN
A1 - Weißhaupt, David
A1 - Sürgers, Christoph
A1 - Bloos, Dominik
A1 - Funk, Hannes Simon
A1 - Oehme, Michael
A1 - Fischer, Gerda
A1 - Schubert, Markus Andreas
A1 - Wenger, Christian
A1 - van Slageren, Joris
A1 - Fischer, Inga Anita
A1 - Schulze, Jörg
T1 - Lateral Mn5Ge3 spin-valve in contact with a high-mobility Ge two-dimensional hole gas
T2 - Semiconductor Science and Technology
N2 - Abstract
Ge two-dimensional hole gases (2DHG) in strained modulation-doped quantum-wells represent a promising material platform for future spintronic applications due to their excellent spin transport properties and the theoretical possibility of efficient spin manipulation. Due to the continuous development of epitaxial growth recipes extreme high hole mobilities and low effective masses can be achieved, promising an efficient spin transport. Furthermore, the Ge 2DHG can be integrated in the well-established industrial complementary metal-oxide-semiconductor (CMOS) devices technology. However, efficient electrical spin injection into a Ge 2DHG—an essential prerequisite for the realization of spintronic devices—has not yet been demonstrated. In this work, we report the fabrication and low-temperature magnetoresistance (MR) measurements of a laterally structured Mn5Ge3/Ge 2DHG/ Mn5Ge3 device. The ferromagnetic Mn5Ge3 contacts are grown directly into the Ge quantum well by means of an interdiffusion process with a spacing of approximately 130 nm, forming a direct electrical contact between the ferromagnetic metal and the Ge 2DHG. Here, we report for the first time a clear MR signal for temperatures below 13 K possibly arising from successful spin injection into the high mobility Ge 2DHG. The results represent a step forward toward the realization of CMOS compatible spintronic devices based on a 2DHG.
KW - two-dimensional hole gas
Y1 - 2024
U6 - https://doi.org/10.1088/1361-6641/ad8d06
SN - 0268-1242
VL - 39
IS - 12
SP - 1
EP - 10
PB - IOP Publishing
ER -
TY - GEN
A1 - Schwartz, Bernhard
A1 - Oehme, Michael
A1 - Kostecki, Konrad
A1 - Widmann, Daniel
A1 - Gollhofer, Martin
A1 - Körner, Roman
A1 - Bechler, Stefan
A1 - Fischer, Inga Anita
A1 - Wendav, Torsten
A1 - Kasper, Erich
A1 - Schulze, Jörg
A1 - Kittler, Martin
T1 - Electroluminescence of GeSn/Ge MQW LEDs on Si substrate
T2 - Optics Letters
Y1 - 2015
U6 - https://doi.org/10.1364/OL40.003209
VL - 40
IS - 13
SP - 3209
EP - 3212
ER -
TY - GEN
A1 - Wendav, Torsten
A1 - Fischer, Inga Anita
A1 - Virgilio, Michele
A1 - Capellini, Giovanni
A1 - Oliveira, F.
A1 - Cerqueira, M. F.
A1 - Benedetti, Alessandro
A1 - Chiussi, Stefano
A1 - Zaumseil, Peter
A1 - Schwartz, Bernhard
A1 - Busch, Kurt
A1 - Schulze, J.
T1 - Photoluminescence from ultrathin Ge-rich multiple quantum wells observed up to room temperature: Experiments and modeling
T2 - Physical Review B 94
Y1 - 2016
U6 - https://doi.org/10.1103/PhysRevB.94.245304
VL - 94
IS - 24
SP - 245304
ER -
TY - GEN
A1 - Körner, Roman
A1 - Schwarz, Daniel
A1 - Fischer, Inga Anita
A1 - Augel, Lion
A1 - Bechler, Stefan
A1 - Hänel, Linda A.
A1 - Kern, Michael
A1 - Oehme, Michael
A1 - Rolseth, Erlend Granbo
A1 - Schwartz, Bernhard
A1 - Weißhaupt, David
A1 - Zhang, Wogong
A1 - Schulze, Jörg
T1 - The Zener-Emitter: A Novel Superluminescent Ge Optical Waveguide-Amplifier with 4.7 dB Gain at 92 mA Based on Free-Carrier Modulation by Drect Zener Tunneling Monolithically Integrated on Si
T2 - 2016 IEEE International Electronic Devices Meeting (IEDM), 3-7 Dec. 2016
Y1 - 2016
SN - 978-1-5090-3901-2
SN - 978-1-5090-3902-9
SP - 22.5.1
EP - 22.5.4
PB - IEEE
CY - Piscataway, NJ
ER -
TY - GEN
A1 - Schlipf, Jon
A1 - Martin, Elena
A1 - Stchakovsky, Michel
A1 - Benedetti, Alessandro
A1 - Fischer, Inga Anita
A1 - Schulze, Jörg
A1 - Chiussi, Stefano
T1 - Ellipsometric analysis of concentration gradients induced in semiconductor crystals by pulsed laser induced epitaxy
T2 - Journal of Vacuum Science & Technology B
Y1 - 2019
U6 - https://doi.org/10.1116/1.5122777
SN - 2166-2754
VL - 37
IS - 6
ER -
TY - GEN
A1 - Funk, Hannes S.
A1 - Kern, Michael
A1 - Weisshaupt, David
A1 - Sürgers, Christoph
A1 - Fischer, Inga Anita
A1 - Oehme, Michael
A1 - Slageren, Joris van
A1 - Schulze, Jörg
T1 - Magnetic Characterization of a Mn Based Ferromagnet on SixGe(1-x-y)Sny with High Sn Content
T2 - ECS Transactions
Y1 - 2019
U6 - https://doi.org/10.1149/09301.0101ecst
SN - 1938-5862
SN - 1938-6737
VL - 93
IS - 1
SP - 101
EP - 104
ER -
TY - GEN
A1 - Fischer, Inga Anita
A1 - Augel, Lion
A1 - Berkmann, Fritz
A1 - Kawaguchi, Yuma
A1 - Schlipf, Jon
A1 - Schulze, Jörg
T1 - Plasmonics-Integrated Ge PIN-Photodetectors
T2 - ECS Transactions
Y1 - 2019
U6 - https://doi.org/10.1149/09301.0041ecst
SN - 1938-5862
SN - 1938-6737
VL - 93
IS - 1
SP - 41
EP - 44
ER -
TY - GEN
A1 - Fischer, Inga Anita
A1 - Clausen, Caterina J.
A1 - Schwarz, Daniel
A1 - Zaumseil, Peter
A1 - Capellini, Giovanni
A1 - Virgilio, Michele
A1 - Da Silva Figueira, Maria Cecilia
A1 - Birner, Stefan
A1 - Koelling, Sebastian
A1 - Koenraad, Paul M.
A1 - Huang, Michael R. S.
A1 - Koch, Christoph T.
A1 - Wendav, Torsten
A1 - Busch, Kurt
A1 - Schulze, Jörg
T1 - Composition analysis and transition energies of ultrathin Sn-rich GeSn quantum wells
T2 - Physical Review Materials
Y1 - 2020
U6 - https://doi.org/10.1103/PhysRevMaterials.4.024601
SN - 2475-9953
VL - 4
IS - 2
ER -
TY - GEN
A1 - Schlykow, Viktoria
A1 - Manganelli, Constanza Lucia
A1 - Römer, Friedhard
A1 - Clausen, Caterina J.
A1 - Augel, Lion
A1 - Schulze, Jörg
A1 - Katzer, Jens
A1 - Schubert, Michael Andreas
A1 - Witzigmann, Bernd
A1 - Schroeder, Thomas
A1 - Capellini, Giovanni
A1 - Fischer, Inga Anita
T1 - Ge(Sn) nano-island/Si heterostructure photodetectors with plasmonic antennas
T2 - Nanotechnology
Y1 - 2020
U6 - https://doi.org/10.1088/1361-6528/ab91ef
SN - 1361-6528
VL - 31
IS - 34
ER -