TY - GEN
A1 - Weißhaupt, David
A1 - Funk, Hannes S.
A1 - Sürgers, Christoph
A1 - Fischer, Gerda
A1 - Oehme, Michael
A1 - Schwarz, Daniel
A1 - Fischer, Inga Anita
A1 - Slageren, Joris van
A1 - Schulze, Jörg
T1 - Formation of Mn5Ge3 on a Recess-Etched Ge (111) Quantum-Well Structure for Semiconductor Spintronics
T2 - 44th International Convention on Information, Communication and Electronic Technology, MIPRO 2021, Opatija, Croatia, September 27 - Oct. 1, 2021
Y1 - 2021
SN - 978-1-6654-4761-4
U6 - https://doi.org/10.23919/MIPRO52101.2021.9596924.
SN - 978-953-233-101-1
SP - 45
EP - 49
PB - Piscataway
CY - IEEE
ER -
TY - GEN
A1 - Weißhaupt, David
A1 - Sürgers, Christoph
A1 - Bloos, Dominik
A1 - Funk, Hannes Simon
A1 - Oehme, Michael
A1 - Fischer, Gerda
A1 - Schubert, Markus Andreas
A1 - Wenger, Christian
A1 - van Slageren, Joris
A1 - Fischer, Inga Anita
A1 - Schulze, Jörg
T1 - Lateral Mn5Ge3 spin-valve in contact with a high-mobility Ge two-dimensional hole gas
T2 - Semiconductor Science and Technology
N2 - Abstract
Ge two-dimensional hole gases (2DHG) in strained modulation-doped quantum-wells represent a promising material platform for future spintronic applications due to their excellent spin transport properties and the theoretical possibility of efficient spin manipulation. Due to the continuous development of epitaxial growth recipes extreme high hole mobilities and low effective masses can be achieved, promising an efficient spin transport. Furthermore, the Ge 2DHG can be integrated in the well-established industrial complementary metal-oxide-semiconductor (CMOS) devices technology. However, efficient electrical spin injection into a Ge 2DHG—an essential prerequisite for the realization of spintronic devices—has not yet been demonstrated. In this work, we report the fabrication and low-temperature magnetoresistance (MR) measurements of a laterally structured Mn5Ge3/Ge 2DHG/ Mn5Ge3 device. The ferromagnetic Mn5Ge3 contacts are grown directly into the Ge quantum well by means of an interdiffusion process with a spacing of approximately 130 nm, forming a direct electrical contact between the ferromagnetic metal and the Ge 2DHG. Here, we report for the first time a clear MR signal for temperatures below 13 K possibly arising from successful spin injection into the high mobility Ge 2DHG. The results represent a step forward toward the realization of CMOS compatible spintronic devices based on a 2DHG.
KW - two-dimensional hole gas
Y1 - 2024
U6 - https://doi.org/10.1088/1361-6641/ad8d06
SN - 0268-1242
VL - 39
IS - 12
SP - 1
EP - 10
PB - IOP Publishing
ER -
TY - GEN
A1 - Schwartz, Bernhard
A1 - Oehme, Michael
A1 - Kostecki, Konrad
A1 - Widmann, Daniel
A1 - Gollhofer, Martin
A1 - Körner, Roman
A1 - Bechler, Stefan
A1 - Fischer, Inga Anita
A1 - Wendav, Torsten
A1 - Kasper, Erich
A1 - Schulze, Jörg
A1 - Kittler, Martin
T1 - Electroluminescence of GeSn/Ge MQW LEDs on Si substrate
T2 - Optics Letters
Y1 - 2015
U6 - https://doi.org/10.1364/OL40.003209
VL - 40
IS - 13
SP - 3209
EP - 3212
ER -
TY - GEN
A1 - Wendav, Torsten
A1 - Fischer, Inga Anita
A1 - Virgilio, Michele
A1 - Capellini, Giovanni
A1 - Oliveira, F.
A1 - Cerqueira, M. F.
A1 - Benedetti, Alessandro
A1 - Chiussi, Stefano
A1 - Zaumseil, Peter
A1 - Schwartz, Bernhard
A1 - Busch, Kurt
A1 - Schulze, J.
T1 - Photoluminescence from ultrathin Ge-rich multiple quantum wells observed up to room temperature: Experiments and modeling
T2 - Physical Review B 94
Y1 - 2016
U6 - https://doi.org/10.1103/PhysRevB.94.245304
VL - 94
IS - 24
SP - 245304
ER -
TY - GEN
A1 - Körner, Roman
A1 - Schwarz, Daniel
A1 - Fischer, Inga Anita
A1 - Augel, Lion
A1 - Bechler, Stefan
A1 - Hänel, Linda A.
A1 - Kern, Michael
A1 - Oehme, Michael
A1 - Rolseth, Erlend Granbo
A1 - Schwartz, Bernhard
A1 - Weißhaupt, David
A1 - Zhang, Wogong
A1 - Schulze, Jörg
T1 - The Zener-Emitter: A Novel Superluminescent Ge Optical Waveguide-Amplifier with 4.7 dB Gain at 92 mA Based on Free-Carrier Modulation by Drect Zener Tunneling Monolithically Integrated on Si
T2 - 2016 IEEE International Electronic Devices Meeting (IEDM), 3-7 Dec. 2016
Y1 - 2016
SN - 978-1-5090-3901-2
SN - 978-1-5090-3902-9
SP - 22.5.1
EP - 22.5.4
PB - IEEE
CY - Piscataway, NJ
ER -
TY - GEN
A1 - Schlipf, Jon
A1 - Martin, Elena
A1 - Stchakovsky, Michel
A1 - Benedetti, Alessandro
A1 - Fischer, Inga Anita
A1 - Schulze, Jörg
A1 - Chiussi, Stefano
T1 - Ellipsometric analysis of concentration gradients induced in semiconductor crystals by pulsed laser induced epitaxy
T2 - Journal of Vacuum Science & Technology B
Y1 - 2019
U6 - https://doi.org/10.1116/1.5122777
SN - 2166-2754
VL - 37
IS - 6
ER -
TY - GEN
A1 - Funk, Hannes S.
A1 - Kern, Michael
A1 - Weisshaupt, David
A1 - Sürgers, Christoph
A1 - Fischer, Inga Anita
A1 - Oehme, Michael
A1 - Slageren, Joris van
A1 - Schulze, Jörg
T1 - Magnetic Characterization of a Mn Based Ferromagnet on SixGe(1-x-y)Sny with High Sn Content
T2 - ECS Transactions
Y1 - 2019
U6 - https://doi.org/10.1149/09301.0101ecst
SN - 1938-5862
SN - 1938-6737
VL - 93
IS - 1
SP - 101
EP - 104
ER -
TY - GEN
A1 - Fischer, Inga Anita
A1 - Augel, Lion
A1 - Berkmann, Fritz
A1 - Kawaguchi, Yuma
A1 - Schlipf, Jon
A1 - Schulze, Jörg
T1 - Plasmonics-Integrated Ge PIN-Photodetectors
T2 - ECS Transactions
Y1 - 2019
U6 - https://doi.org/10.1149/09301.0041ecst
SN - 1938-5862
SN - 1938-6737
VL - 93
IS - 1
SP - 41
EP - 44
ER -
TY - GEN
A1 - Fischer, Inga Anita
A1 - Clausen, Caterina J.
A1 - Schwarz, Daniel
A1 - Zaumseil, Peter
A1 - Capellini, Giovanni
A1 - Virgilio, Michele
A1 - Da Silva Figueira, Maria Cecilia
A1 - Birner, Stefan
A1 - Koelling, Sebastian
A1 - Koenraad, Paul M.
A1 - Huang, Michael R. S.
A1 - Koch, Christoph T.
A1 - Wendav, Torsten
A1 - Busch, Kurt
A1 - Schulze, Jörg
T1 - Composition analysis and transition energies of ultrathin Sn-rich GeSn quantum wells
T2 - Physical Review Materials
Y1 - 2020
U6 - https://doi.org/10.1103/PhysRevMaterials.4.024601
SN - 2475-9953
VL - 4
IS - 2
ER -
TY - GEN
A1 - Schlykow, Viktoria
A1 - Manganelli, Constanza Lucia
A1 - Römer, Friedhard
A1 - Clausen, Caterina J.
A1 - Augel, Lion
A1 - Schulze, Jörg
A1 - Katzer, Jens
A1 - Schubert, Michael Andreas
A1 - Witzigmann, Bernd
A1 - Schroeder, Thomas
A1 - Capellini, Giovanni
A1 - Fischer, Inga Anita
T1 - Ge(Sn) nano-island/Si heterostructure photodetectors with plasmonic antennas
T2 - Nanotechnology
Y1 - 2020
U6 - https://doi.org/10.1088/1361-6528/ab91ef
SN - 1361-6528
VL - 31
IS - 34
ER -
TY - GEN
A1 - Augel, Lion
A1 - Fischer, Inga Anita
A1 - Gollhofer, Martin
A1 - Oehme, Michael
A1 - Schulze, Jörg
T1 - Comparing Fourier transform infrared spectroscopy results with photocurrent measurements for Ge-on-Si PIN photodetectors with and without Al nanoantennas
T2 - Journal of Applied Physics
Y1 - 2020
U6 - https://doi.org/10.1063/5.0012279
SN - 1089-7550
VL - 128
IS - 1
SP - 013105-1
EP - 013105-8
ER -
TY - GEN
A1 - Weißhaupt, David
A1 - Funk, Hannes S.
A1 - Kern, Michal
A1 - Dettling, Marco M.
A1 - Schwarz, Daniel
A1 - Oehme, Michael
A1 - Sürgers, Christoph
A1 - Slageren, Joris van
A1 - Fischer, Inga Anita
A1 - Schulze, Jörg
T1 - Weak localization and weak antilocalization in doped Ge1-ySny layers with up to 8% Sn
T2 - Journal of Physics: Condensed Matter
Y1 - 2021
U6 - https://doi.org/10.1088/1361-648X/abcb68
SN - 1361-648X
VL - 33
IS - 8
ER -
TY - GEN
A1 - Schlipf, Jon
A1 - Tetzner, Henriette
A1 - Spirito, Davide
A1 - Manganelli, Constanza Lucia
A1 - Capellini, Giovanni
A1 - Huang, Michael R. S.
A1 - Koch, Christoph T.
A1 - Clausen, Caterina J.
A1 - Elsayed, Ahmed
A1 - Schulze, Jörg
A1 - Fischer, Inga Anita
T1 - Raman shifts in MBE‐grown SixGe1 − x − ySny alloys with large Si content
T2 - Journal of Raman Spectroscopy
Y1 - 2021
U6 - https://doi.org/10.1002/jrs.6098
SN - 1097-4555
ER -
TY - GEN
A1 - Augel, Lion
A1 - Schlipf, Jon
A1 - Bullert, Sergej
A1 - Bürzele, Sebastian
A1 - Schulze, Jörg
A1 - Fischer, Inga Anita
T1 - Photonic-plasmonic mode coupling in nanopillar Ge-on-Si PIN photodiodes
T2 - Scientific Reports
N2 - Incorporating group IV photonic nanostructures within active top-illuminated photonic devices often requires light-transmissive contact schemes. In this context, plasmonic nanoapertures in metallic films can not only be realized using CMOS compatible metals and processes, they can also serve to influence the wavelength-dependent device responsivities. Here, we investigate crescent-shaped nanoapertures in close proximity to Ge-on-Si PIN nanopillar photodetectors both in simulation and experiment. In our geometries, the absorption within the devices is mainly shaped by the absorption characteristics of the vertical semiconductor nanopillar structures (leaky waveguide modes). The plasmonic resonances can be used to influence how incident light couples into the leaky modes within the nanopillars. Our results can serve as a starting point to selectively tune our device geometries for applications in spectroscopy or refractive index sensing.
Y1 - 2021
U6 - https://doi.org/10.1038/s41598-021-85012-z
SN - 2045-2322
IS - 11
ER -
TY - GEN
A1 - Schlipf, Jon
A1 - Fischer, Inga Anita
T1 - Rigorous coupled-wave analysis of a multi-layered plasmonic integrated refractive index sensor
T2 - Optics Express
Y1 - 2021
U6 - https://doi.org/10.1364/OE.438585
SN - 1094-4087
VL - Vol. 29
IS - 22
SP - 36201
EP - 36210
ER -
TY - GEN
A1 - Tetzner, Henriette
A1 - Fischer, Inga Anita
A1 - Skibitzki, Oliver
A1 - Mirza, M. M.
A1 - Manganelli, Constanza Lucia
A1 - Luongo, G.
A1 - Spirito, Davide
A1 - Douglas, J. P.
A1 - De Seta, Monica
A1 - Capellini, Giovanni
T1 - Current leakage mechanisms related to threading dislocations in Ge-rich SiGe heterostructures grown on Si(001)
T2 - Applied Physics Letters
Y1 - 2021
U6 - https://doi.org/10.1063/5.0064477
SN - 1077-3118
SN - 0003-6951
VL - 119
IS - 15
ER -
TY - GEN
A1 - Bergmann, Fritz
A1 - Ayasse, Markus
A1 - Schlipf, Jon
A1 - Mörz, Florian
A1 - Weißhaupt, David
A1 - Oehme, Michael
A1 - Prucnal, Slawomir
A1 - Kawaguchi, Yuma
A1 - Schwarz, Daniel
A1 - Fischer, Inga Anita
A1 - Schulze, Jörg
T1 - Plasmonic gratings from highly doped Ge1−ySny films on Si
T2 - Journal of Physics D: Applied Physics
Y1 - 2021
SN - 1361-6463
VL - 54
IS - 44
ER -
TY - GEN
A1 - Berkmann, Fritz
A1 - Ayasse, Markus
A1 - Mörz, Florian
A1 - Fischer, Inga Anita
A1 - Schulze, Jörg
T1 - Titanium and Nickel as alternative materials for mid Infrared Plasmonic
T2 - 44th International Convention on Information, Communication and Electronic Technology, MIPRO 2021, Opatija, Croatia, September 27 - Oct. 1, 2021
Y1 - 2021
SN - 978-953-233-101-1
SN - 978-1-6654-4761-4
U6 - https://doi.org/10.23919/MIPRO52101.2021.9597155
SP - 36
EP - 39
PB - Piscataway
CY - IEEE
ER -
TY - GEN
A1 - Funk, Hannes S.
A1 - Kern, Michael
A1 - Weißhaupt, David
A1 - Sürgers, Christoph
A1 - Fischer, Inga Anita
A1 - Oehme, Michael
A1 - Slageren, Joris van
A1 - Schulze, Jörg
T1 - Composition and magnetic properties of thin films grown by interdiffusion of Mn and Sn-Rich, Ge lattice matched SixGe1-x-ySny layers
T2 - Journal of Magnetism and Magnetic Materials
Y1 - 2022
U6 - https://doi.org/10.1016/j.jmmm.2021.168731.
SN - 0304-8853
VL - 546
ER -
TY - GEN
A1 - Elogail, Yasmine
A1 - Berkmann, Fritz
A1 - Clausen, Caterina J.
A1 - Fischer, Inga Anita
A1 - Hänel, Linda A.
A1 - Schwarz, Daniel
A1 - Schulze, Jörg
T1 - Investigation of Ge-Based P-Channel Planar-Doped Barrier FETs integrated
on Si
T2 - Microelectronics Journal
Y1 - 2022
U6 - https://doi.org/10.1016/j.mejo.2022.105404
SN - 1879-2391
VL - 123
ER -
TY - GEN
A1 - Xie, Yufang
A1 - Birowska, Magdalena
A1 - Funk, Hannes S.
A1 - Fischer, Inga Anita
A1 - Schwarz, Daniel
A1 - Schulze, Jörg
A1 - Zeng, Yu-Jia
A1 - Helm, Manfred
A1 - Zhou, Shengqiang
A1 - Prucnal, Slawomir
T1 - Tuning of Curie temperature in Mn5Ge3 films
T2 - Journal of Applied Physics
Y1 - 2022
U6 - https://doi.org/10.1063/5.0066717
SN - 1089-7550
VL - 131
SP - 105102-1
EP - 105102-8
ER -
TY - GEN
A1 - Berkmann, Fritz
A1 - Augel, Lion
A1 - Hack, Michael
A1 - Kawaguchi, Yuma
A1 - Weißhaupt, David
A1 - Fischer, Inga Anita
A1 - Schulze, Jörg
T1 - Optimization of fully integrated Al nanohole array-based refractive index sensors for use with a LED light source Fritz Berkmann
T2 - IEEE Photonics Journal
KW - Sensors
KW - Refractive index
KW - Optical variables control
KW - Optical refraction
KW - Optical device fabrication
KW - Germanium
KW - Solid modeling
Y1 - 2022
UR - https://ieeexplore.ieee.org/document/9781306
U6 - https://doi.org/10.1109/JPHOT.2022.3177354
SN - 1943-0655
VL - 14
IS - 3
SP - 1
EP - 8
ER -
TY - GEN
A1 - Xie, Yufang
A1 - Li, Zichao
A1 - Begeza, Viktor
A1 - Funk, Hannes S.
A1 - Fischer, Inga Anita
A1 - Zeng, Yu-Jia
A1 - Helm, Manfred
A1 - Zhou, Shengqiang
A1 - Prucnal, Slawomir
T1 - Influence of fabrication parameters on the magnetic and structural properties of Mn5Ge3
T2 - Semiconductor Science and Technology
N2 - Mn5Ge3 is a ferromagnetic material with the high potential for spintronic applications. Usually, it is grown by conventional solid state reaction of manganese with germanium using molecular beam epitaxy. Here, we report the structural and magnetic properties of Mn5Ge3 layers grown on Ge substrates using ultrafast-solid phase epitaxy (SPE) method. We investigate the influence of the substrate orientation, Mn layer thickness and annealing parameters on the crystallographic orientation and magnetization of Mn5Ge3. It is shown that after millisecond range SPE, Mn5Ge3 films always have a preferred (100) orientation whether grown on Ge (001) or (111) substrates, which determines the orientation of the magnetization easy axis lying in the film plane along c axis independent of the layer thickness. The Curie temperature of Mn5Ge3 weakly depends on fabrication parameters.
KW - solid phase epitaxy
KW - flash lamp annealing
KW - ferromagnetic film
KW - spintronic
KW - fabrication parameter
KW - structural property
Y1 - 2022
UR - https://iopscience.iop.org/article/10.1088/1361-6641/ac6689
U6 - https://doi.org/10.1088/1361-6641/ac6689
SN - 1361-6641
VL - 37
IS - 6
SP - 1
EP - 8
ER -
TY - GEN
A1 - Fischer, Inga Anita
A1 - Brehm, Moritz
A1 - De Seta, Monica
A1 - Isella, Giovanni
A1 - Paul, Douglas J.
A1 - Virgilio, Michele
A1 - Capellini, Giovanni
T1 - On-chip infrared photonics with Si-Ge-heterostructures: What is next?
T2 - APL Photonics
N2 - The integration of Ge on Si for photonics applications has reached a high level of maturity: Ge photodetectors are available on the Si platform in foundry processes, and Si/Ge heterostructure multiple quantum-well photodiodes are rapidly progressing toward applications in light modulation. These successes result from decades of development of high-quality material growth and integration, which, more recently, has sparked an increasingly broad field of photonic device research based on Si/Ge heterostructures that extends from quantum cascade lasers to sensors. Here, we highlight selected recent structure and device developments as well as possible future trends that are enabled by the maturity of the SiGe material platform
KW - Heterostructures
KW - Photodetectors
KW - Photonics
KW - Nanowires
KW - Plasmonics
KW - Epitaxy
KW - Quantum wells
KW - Lasers
KW - Sensors
KW - Electronic band structure
Y1 - 2022
UR - https://aip.scitation.org/doi/10.1063/5.0078608
U6 - https://doi.org/10.1063/5.0078608
SN - 2378-0967
VL - 7
IS - 5
SP - 050901-1
EP - 050901-20
ER -
TY - GEN
A1 - Mai, Christian
A1 - Marschmeyer, Steffen
A1 - Peczek, Anna
A1 - Kroh, Aleksandra
A1 - Jose, Josmy
A1 - Reiter, Sebastian
A1 - Fischer, Inga Anita
A1 - Wenger, Christian
A1 - Mai, Andreas
T1 - Integration Aspects of Plasmonic TiN-based Nano-Hole-Arrays on Ge Photodetectorsin a 200mm Wafer CMOS Compatible Silicon Technology
T2 - ECS Transactions
N2 - In this work we present the progress in regard to the integration of a surface plasmon resonance refractive index sensor into a CMOS compatible 200 mm wafer silicon-based technology. Our approach pursues the combination of germanium photodetectors with metallic nanohole arrays. The paper is focused on the technology development to fabricate large area photodetectors based on a modern design concept. In a first iteration we achieved a leakage current density of 82 mA/cm2 at reverse bias of 0.5 V and a maximum optical responsivity of 0.103 A/W measured with TE polarized light at λ = 1310 nm and a reversed bias of 1 V. For the realization of nanohole arrays we used thin Titanium nitride (TiN) layers deposited by a sputtering process. We were able to produce very homogenous TiN layers with a thickness deviation of around 10 % and RMS of 1.413 nm for 150 nm thick TiN layers.
KW - plasmonics
KW - nanohole array
KW - germanium detector
Y1 - 2022
U6 - https://doi.org/10.1149/10904.0035ecst
SN - 1938-5862
VL - 109
IS - 4
SP - 35
EP - 46
ER -
TY - GEN
A1 - Steuer, Oliver
A1 - Schwarz, Daniel
A1 - Oehme, Michael
A1 - Schulze, J.
A1 - Maczko, H.
A1 - Kudrawiec, Robert
A1 - Fischer, Inga Anita
A1 - Heller, R.
A1 - Hübner, R.
A1 - Khan, M. M.
A1 - Georgiev, Yordan M.
A1 - Zhou, Shengqiang
A1 - Helm, M.
A1 - Prucnal, Slawomir
T1 - Band-gap and strain engineering in GeSn alloys using post-growth pulsed laser melting
T2 - Journal of Physics: Condensed Matter
Y1 - 2022
U6 - https://doi.org/10.1088/1361-648X/aca3ea
SN - 1361-648X
VL - 35
IS - 5
ER -
TY - GEN
A1 - Efremenko, Yulia
A1 - Laroussi, Arwa
A1 - Sengül, Akant
A1 - Corley-Wiciak, Agnieszka Anna
A1 - Fischer, Inga Anita
A1 - Mirsky, Vladimir M.
T1 - Deposition of Polymers on Titanium Nitride Electrodes
T2 - Coatings
N2 - The application of titanium nitride (TiN) as an electrode for electrochemical deposition or characterization requires the removal of an insulating layer from its surface. This process was studied and optimized, and the conditions for the complete removal of this layer through treatment with oxalic acid were formulated. The obtained TiN surfaces were used for the deposition of various conducting and non-conducting polymers. Two different approaches were applied: (i) in situ electrochemical synthesis of the main classes of conducting polymers, including polyaniline, polypyrrole, polythiophene, and selected derivatives thereof, and (ii) electrostatically driven layer-by-layer (LbL) deposition of multilayers of oppositely charged polyelectrolytes. The deposited polymers were characterized by electrochemical methods. The electrochemical properties of the deposited conducting polymers and their deposition on the TiN surface were comparable to those of the metallic electrodes. The films produced via LbL deposition exhibited a pronounced influence of the charge of the last deposited polymer on the redox reaction of ferri/ferrocyanide, validating the charge alteration with each successive polymer layer deposition. The studied deposition technologies can be used for the modification of TiN surfaces required in applications of this material in chemical sensors and other devices.
Y1 - 2024
U6 - https://doi.org/10.3390/coatings14020215
SN - 2079-6412
VL - 14
IS - 2
ER -