TY - GEN A1 - Augel, Lion A1 - Schlipf, Jon A1 - Bullert, Sergej A1 - Bürzele, Sebastian A1 - Schulze, Jörg A1 - Fischer, Inga Anita T1 - Photonic-plasmonic mode coupling in nanopillar Ge-on-Si PIN photodiodes T2 - Scientific Reports N2 - Incorporating group IV photonic nanostructures within active top-illuminated photonic devices often requires light-transmissive contact schemes. In this context, plasmonic nanoapertures in metallic films can not only be realized using CMOS compatible metals and processes, they can also serve to influence the wavelength-dependent device responsivities. Here, we investigate crescent-shaped nanoapertures in close proximity to Ge-on-Si PIN nanopillar photodetectors both in simulation and experiment. In our geometries, the absorption within the devices is mainly shaped by the absorption characteristics of the vertical semiconductor nanopillar structures (leaky waveguide modes). The plasmonic resonances can be used to influence how incident light couples into the leaky modes within the nanopillars. Our results can serve as a starting point to selectively tune our device geometries for applications in spectroscopy or refractive index sensing. Y1 - 2021 U6 - https://doi.org/10.1038/s41598-021-85012-z SN - 2045-2322 IS - 11 ER - TY - GEN A1 - Schlipf, Jon A1 - Fischer, Inga Anita T1 - Rigorous coupled-wave analysis of a multi-layered plasmonic integrated refractive index sensor T2 - Optics Express Y1 - 2021 U6 - https://doi.org/10.1364/OE.438585 SN - 1094-4087 VL - Vol. 29 IS - 22 SP - 36201 EP - 36210 ER - TY - GEN A1 - Tetzner, Henriette A1 - Fischer, Inga Anita A1 - Skibitzki, Oliver A1 - Mirza, M. M. A1 - Manganelli, Constanza Lucia A1 - Luongo, G. A1 - Spirito, Davide A1 - Douglas, J. P. A1 - De Seta, Monica A1 - Capellini, Giovanni T1 - Current leakage mechanisms related to threading dislocations in Ge-rich SiGe heterostructures grown on Si(001) T2 - Applied Physics Letters Y1 - 2021 U6 - https://doi.org/10.1063/5.0064477 SN - 1077-3118 SN - 0003-6951 VL - 119 IS - 15 ER - TY - GEN A1 - Bergmann, Fritz A1 - Ayasse, Markus A1 - Schlipf, Jon A1 - Mörz, Florian A1 - Weißhaupt, David A1 - Oehme, Michael A1 - Prucnal, Slawomir A1 - Kawaguchi, Yuma A1 - Schwarz, Daniel A1 - Fischer, Inga Anita A1 - Schulze, Jörg T1 - Plasmonic gratings from highly doped Ge1−ySny films on Si T2 - Journal of Physics D: Applied Physics Y1 - 2021 SN - 1361-6463 VL - 54 IS - 44 ER - TY - GEN A1 - Berkmann, Fritz A1 - Ayasse, Markus A1 - Mörz, Florian A1 - Fischer, Inga Anita A1 - Schulze, Jörg T1 - Titanium and Nickel as alternative materials for mid Infrared Plasmonic T2 - 44th International Convention on Information, Communication and Electronic Technology, MIPRO 2021, Opatija, Croatia, September 27 - Oct. 1, 2021 Y1 - 2021 SN - 978-953-233-101-1 SN - 978-1-6654-4761-4 U6 - https://doi.org/10.23919/MIPRO52101.2021.9597155 SP - 36 EP - 39 PB - Piscataway CY - IEEE ER - TY - GEN A1 - Funk, Hannes S. A1 - Kern, Michael A1 - Weißhaupt, David A1 - Sürgers, Christoph A1 - Fischer, Inga Anita A1 - Oehme, Michael A1 - Slageren, Joris van A1 - Schulze, Jörg T1 - Composition and magnetic properties of thin films grown by interdiffusion of Mn and Sn-Rich, Ge lattice matched SixGe1-x-ySny layers T2 - Journal of Magnetism and Magnetic Materials Y1 - 2022 U6 - https://doi.org/10.1016/j.jmmm.2021.168731. SN - 0304-8853 VL - 546 ER - TY - GEN A1 - Elogail, Yasmine A1 - Berkmann, Fritz A1 - Clausen, Caterina J. A1 - Fischer, Inga Anita A1 - Hänel, Linda A. A1 - Schwarz, Daniel A1 - Schulze, Jörg T1 - Investigation of Ge-Based P-Channel Planar-Doped Barrier FETs integrated on Si T2 - Microelectronics Journal Y1 - 2022 U6 - https://doi.org/10.1016/j.mejo.2022.105404 SN - 1879-2391 VL - 123 ER - TY - GEN A1 - Xie, Yufang A1 - Birowska, Magdalena A1 - Funk, Hannes S. A1 - Fischer, Inga Anita A1 - Schwarz, Daniel A1 - Schulze, Jörg A1 - Zeng, Yu-Jia A1 - Helm, Manfred A1 - Zhou, Shengqiang A1 - Prucnal, Slawomir T1 - Tuning of Curie temperature in Mn5Ge3 films T2 - Journal of Applied Physics Y1 - 2022 U6 - https://doi.org/10.1063/5.0066717 SN - 1089-7550 VL - 131 SP - 105102-1 EP - 105102-8 ER - TY - GEN A1 - Berkmann, Fritz A1 - Augel, Lion A1 - Hack, Michael A1 - Kawaguchi, Yuma A1 - Weißhaupt, David A1 - Fischer, Inga Anita A1 - Schulze, Jörg T1 - Optimization of fully integrated Al nanohole array-based refractive index sensors for use with a LED light source Fritz Berkmann T2 - IEEE Photonics Journal KW - Sensors KW - Refractive index KW - Optical variables control KW - Optical refraction KW - Optical device fabrication KW - Germanium KW - Solid modeling Y1 - 2022 UR - https://ieeexplore.ieee.org/document/9781306 U6 - https://doi.org/10.1109/JPHOT.2022.3177354 SN - 1943-0655 VL - 14 IS - 3 SP - 1 EP - 8 ER - TY - GEN A1 - Xie, Yufang A1 - Li, Zichao A1 - Begeza, Viktor A1 - Funk, Hannes S. A1 - Fischer, Inga Anita A1 - Zeng, Yu-Jia A1 - Helm, Manfred A1 - Zhou, Shengqiang A1 - Prucnal, Slawomir T1 - Influence of fabrication parameters on the magnetic and structural properties of Mn5Ge3 T2 - Semiconductor Science and Technology N2 - Mn5Ge3 is a ferromagnetic material with the high potential for spintronic applications. Usually, it is grown by conventional solid state reaction of manganese with germanium using molecular beam epitaxy. Here, we report the structural and magnetic properties of Mn5Ge3 layers grown on Ge substrates using ultrafast-solid phase epitaxy (SPE) method. We investigate the influence of the substrate orientation, Mn layer thickness and annealing parameters on the crystallographic orientation and magnetization of Mn5Ge3. It is shown that after millisecond range SPE, Mn5Ge3 films always have a preferred (100) orientation whether grown on Ge (001) or (111) substrates, which determines the orientation of the magnetization easy axis lying in the film plane along c axis independent of the layer thickness. The Curie temperature of Mn5Ge3 weakly depends on fabrication parameters. KW - solid phase epitaxy KW - flash lamp annealing KW - ferromagnetic film KW - spintronic KW - fabrication parameter KW - structural property Y1 - 2022 UR - https://iopscience.iop.org/article/10.1088/1361-6641/ac6689 U6 - https://doi.org/10.1088/1361-6641/ac6689 SN - 1361-6641 VL - 37 IS - 6 SP - 1 EP - 8 ER - TY - GEN A1 - Fischer, Inga Anita A1 - Brehm, Moritz A1 - De Seta, Monica A1 - Isella, Giovanni A1 - Paul, Douglas J. A1 - Virgilio, Michele A1 - Capellini, Giovanni T1 - On-chip infrared photonics with Si-Ge-heterostructures: What is next? T2 - APL Photonics N2 - The integration of Ge on Si for photonics applications has reached a high level of maturity: Ge photodetectors are available on the Si platform in foundry processes, and Si/Ge heterostructure multiple quantum-well photodiodes are rapidly progressing toward applications in light modulation. These successes result from decades of development of high-quality material growth and integration, which, more recently, has sparked an increasingly broad field of photonic device research based on Si/Ge heterostructures that extends from quantum cascade lasers to sensors. Here, we highlight selected recent structure and device developments as well as possible future trends that are enabled by the maturity of the SiGe material platform KW - Heterostructures KW - Photodetectors KW - Photonics KW - Nanowires KW - Plasmonics KW - Epitaxy KW - Quantum wells KW - Lasers KW - Sensors KW - Electronic band structure Y1 - 2022 UR - https://aip.scitation.org/doi/10.1063/5.0078608 U6 - https://doi.org/10.1063/5.0078608 SN - 2378-0967 VL - 7 IS - 5 SP - 050901-1 EP - 050901-20 ER -