TY - GEN A1 - Wilks, Regan G. A1 - Repins, Ingrid A1 - Contreras, M. A. A1 - Duarte, Roberto Felix A1 - Herrero-Albillos, J. A1 - Tati-Bismaths, L. A1 - Kronast, F. A1 - Noufi, R. A1 - Bär, Marcus T1 - Intergrain variations of the chemical and electronic surface structure of polycrystalline Cu(In,Ga)Se2 thin-film solar cell absorbers T2 - Applied Physics Letters N2 - The μm-scale spatial distribution of the elements of polycrystalline Cu(In1− x Ga x )Se2 absorber surfaces is examined using x-ray photoelectron emission microscopy. The chemical composition varies from grain to grain, and a direct, linear anticorrelation between the In 3d and Ga 2p photoemission line intensities is observed. The line intensities are interpreted in terms of a varying value of x= Ga/(In+ Ga); the band gaps calculated from the inferred compositions of the grains are shown to be normally distributed with a standard deviation of 40 meV. Y1 - 2012 SN - 0003-6951 VL - 101 IS - 10 SP - 103908-1 EP - 103908-4 ER -